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Contents
, H, O* a* W: m1. Definition .....................................................................................................................60' q& B2 H9 p1 J" u4 H
2. Background .................................................................................................................608 O/ E) @9 o- [( S/ A
2.1. Nanostructured materials .........................................................................................62
^9 k8 x2 B5 a2.2. Free standing shapes ..............................................................................................62, V/ N8 F2 p2 w* E( q' c$ T" @
2.3. Rapid prototyping ....................................................................................................638 _# C- H, K7 y+ O& y: \2 N
3. Advantages and disadvantages of CVD.......................................................................63) o4 ^, R ~/ H1 z
4. Thin film and coating applications.................................................................................649 O/ z8 e r' D/ M9 M4 m" n- B. v9 M
5. CVD system .................................................................................................................650 x$ l2 q4 }/ S: l3 r
5.1. Chemical vapour precursor supply system ...............................................................66
# {& E; q' l2 f0 {! p5.2. CVD reactor .............................................................................................................67: h7 b# B* h, c7 `: H; G
5.3. The effluent gas handling system ..............................................................................67( V' Z) a+ a# [; d( a
6. Process principles and deposition mechanism...............................................................70) D& B% T1 X6 m3 E
7. Chemical precursors and reaction chemistry.................................................................70- t; T* i% L' S+ U( t, g
8. Thermodynamics, kinetics and mass transport phenomena...........................................72
- A T0 t) S6 ^# i6 v) `2 e$ e8.1. Thermodynamics ...................................................................................................... 723 S8 A! B9 G0 X4 o! J
8.1.1. Reaction feasibility................................................................................... 72) h) z1 L, a0 k
8.1.2. CVD phase diagram................................................................................. 75$ G" P7 g r% M! R3 f
8.2. Kinetics..................................................................................................................... 76
! C! R7 W" w% Y* `. S: r: v8.3. Mass transport phenomena ...................................................................................... 793 c3 _5 Z4 b" H2 t# s. `
8.3.1. Fluid dynamics......................................................................................... 79. G4 r w. E! m# ^2 Z" j3 }! x. R# a
8.4. Mass transport control ............................................................................................. 80# ?# K: c5 @+ X2 c
9. CVD process parameters...............................................................................................80
( Q& x* V! w8 Q; S8 I9.1. Coating uniformity ................................................................................................... 815 M4 U% w6 n1 `& `& Z! g
9.2. Coating–substrate adhesion......................................................................................81
: Z0 }" `; B) i. U7 b" s0 m* _9.3. Uniformity of coating composition .......................................................................... 824 |% h1 ?2 M2 o1 }* K* F6 N' r* D
10. Process monitoring and measurement of the CVD process ..........................................82
. t3 l0 W2 y8 A& t0 d: c: d) i10.1. Temperature .............................................................................................................888 r9 w P/ N5 p$ a+ ~) M
10.2. Chemical species .......................................................................................................88
% ^: V* U/ }' v10.3. Fluid flow ................................................................................................................. 890 z( Z+ h/ d" c4 W! N" @
1. Process/microstructure/property relationships in CVD ....................................................89
0 L0 f8 q4 E, f, P% b0 V1 C0 h( a7 w11.1. Epitaxial growth .......................................................................................................90" f, U! w# R4 q
11.2. Polycrystalline growth ..............................................................................................90( j' X* B1 Q. W6 C+ P+ ~3 J
11.3. Whiskers ...................................................................................................................91
* Y. m6 |3 L" ]8 A1 |, I: ~, M9 l11.4. Amorphous...............................................................................................................91
6 s/ R. N; |1 ~! y12. Variants of CVD methods............................................................................................94
) F' U% D+ r: j12.1. Thermally activated chemical vapour deposition .....................................................94
- u! W9 ~0 G( v9 L5 m) Z* M8 d! o12.1.1. Semiconductors, dielectric and metallic films for microelectronics,1 d; l7 U, m, {
optoelectronics or energy conversion devices........................................... 96: V( r2 z. N: h: y# N
2.1.2. Ceramic protective coatings ...................................................................100
/ ] U- @+ r' G- ~ q12.1.3. Diffusion coating....................................................................................1038 I' b2 [% u l
12.1.4. Optical fibres ..........................................................................................104
0 j H' A* b4 H! {12.1.5. Ceramic monofilament fibres .................................................................105
3 c8 W. A& F5 G7 g. |! |" Q* T' k12.1.6. Fibre coating ..........................................................................................107
3 t- S. C# `/ F/ g" i12.2. Plasma enhanced chemical vapour deposition ..........................................110
* u* r0 A2 G+ A12.2.1. Process principles ...................................................................................110
2 }) H; Q# x# h3 i' \12.2.2. Disadvantages and advantages of PECVD............................................111
2 ^" p" `3 O6 D$ o( m12.2.3. Examples of applications .......................................................................114
" ` C, ^7 U; |! P) t' Q12.3. Photo-assisted chemical vapour deposition ..............................................1171 a1 I8 z- Q' Q9 z
12.3.1. Photo-thermal ........................................................................................118
8 @# x% P8 J7 }5 C: l% j% |12.3.2. Photolytic ...............................................................................................118
" y2 m% {8 C6 p& W' u0 z, ?12.3.3. Advantages.............................................................................................1199 S- ]( Y$ M6 p4 i" p( F6 y
12.3.4. Applications ...........................................................................................119
. K I. E' J4 n12.4. Atomic layer epitaxy process.................................................................. 121' N) ?$ m2 {. z2 m
2.5. Metalorganic chemical vapour deposition.....................................................122
, a, t n5 n. i. ^12.5.1. Definition ...............................................................................................122* V5 _* N% |; h9 y; G
12.5.2. Process characteristics and advantages ..................................................1240 J. M- B' y- ^, w6 E7 ~
12.5.3. Limitations .............................................................................................125
. j9 v" G7 m$ P( a9 n1 V12.5.4. Applications ...........................................................................................125
2 k7 e+ R/ [8 P* V) Q: b12.6. Pulsed injection metalorganic chemical vapour deposition ........................125
. k" g V, Z6 w* K, K8 ?12.6.1. Problems associated with the MOCVD method, especially for the' ^+ y) |& x$ G8 d, w D
deposition of multicomponent oxides or multilayers ............................. 125) Q, r+ I1 Z8 c8 J2 A& J5 x
2.6.2. Solutions to the problems using single source and special precursor4 E1 y3 \, m) [$ s w. g
injection methods ................................................................................... 126$ r, G# n/ m( L' U1 z$ f6 k
2.6.3. Pulsed injection MOCVD ......................................................................126
1 |6 L6 S* `; o12.7. Aerosol assisted chemical vapour deposition .............................................128; E5 k2 @+ S2 G2 D
12.7.1. Pyrosol ...................................................................................................131
/ {: ~, G) L) u8 _9 @1 }/ E# l12.7.2. Electrostatic assisted vapour deposition.................................................133
1 t3 g/ O/ k4 G: B! |% T12.8. Flame assisted chemical vapour deposition................................................140
* H8 }% K0 F& J/ ^- K12.8.1. Flame-assisted vapour deposition ..........................................................142
9 `* t9 {- A6 b |, @12.8.2. Combustion chemical vapour deposition ...............................................143
( C5 r7 Q- s) t6 r E; o12.9. Electrochemical vapour deposition............................................................144
3 Y5 o7 C P9 V( k8 g$ a12.9.1. Process principle.....................................................................................145# _: a6 n0 C G# ~
12.9.2. Kinetics and growth...............................................................................146
% J z' {; ~" n12.9.3. Comparison of CVD and EVD processes..............................................147
0 ~1 N2 b$ W$ o- L. z12.9.4. Advantages.............................................................................................148
" _5 S" @- g' q* R* S. _: h4 d* Q12.9.5. Technological status...............................................................................148
$ ^2 T9 L" l4 D1 q- o12.9.6. Other variants ........................................................................................149
) y6 \$ l+ J4 K) p8 n& p" u12.10. Chemical vapour infiltration ..................................................................1494 i4 i4 J4 B W/ Y& c7 \
12.10.1. Applications ...........................................................................................1504 D, c9 L/ B, V& |
12.10.2. Methodology..........................................................................................151: w: l" L) J$ g$ j4 `5 m3 a3 s! S
12.10.3. Various CVI processes ...........................................................................153# h+ }% H! V7 G$ ^, w+ r& I
13.Comparison of various CVD methods.................................................................156: N* S1 t! g8 T( @3 L
14.Comparison of CVD with other coating techniques ...........................................157
2 u2 U0 G% ?0 m* p15. Conclusions and outlook ..................................................................................159! _, |: A7 y* X) v8 t8 r6 j, b
Acknowledgements....................................................................................................160
1 \ m6 f) Y' e; j4 S3 h# [2 zReferences ..............................................................................................................160 |
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