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Contents2 e4 L; a) ]4 |+ J' r
1. Definition .....................................................................................................................607 \" R( ]! \, v& E/ w# v( F
2. Background .................................................................................................................60$ S; D. l. ~9 H; Y5 i
2.1. Nanostructured materials .........................................................................................62; l: {1 Q' h! C7 W; z7 |
2.2. Free standing shapes ..............................................................................................62
6 P; C8 W! N, j. Q& u$ k5 [2.3. Rapid prototyping ....................................................................................................635 ~ g) B: A% C) ]/ T
3. Advantages and disadvantages of CVD.......................................................................63
" j- N, y: S3 O+ `, Z4. Thin film and coating applications.................................................................................64. @: r8 f2 x' T: z
5. CVD system .................................................................................................................65# d3 Y, p* U$ {8 a1 v2 s% @
5.1. Chemical vapour precursor supply system ...............................................................66" w- p& ~" R) h2 |# L; B) d* Y; }6 J
5.2. CVD reactor .............................................................................................................67
A0 \+ n( R. u+ G5.3. The effluent gas handling system ..............................................................................67
- a, z Q& H( D" {2 U6. Process principles and deposition mechanism...............................................................70
# Y; T% S2 b6 a% j; ]7. Chemical precursors and reaction chemistry.................................................................70; l1 C+ X V9 Z( c8 H8 K4 G
8. Thermodynamics, kinetics and mass transport phenomena...........................................72
; p4 q# z; s0 c' b6 K0 T1 L8.1. Thermodynamics ...................................................................................................... 72- O% E/ |2 T& s0 G! w
8.1.1. Reaction feasibility................................................................................... 72' e# l: }( N9 I6 p# b
8.1.2. CVD phase diagram................................................................................. 754 w$ ?2 G. U1 \1 |$ y2 u8 J/ I. r; U
8.2. Kinetics..................................................................................................................... 76) ~* n1 r" @4 n) x2 z# t
8.3. Mass transport phenomena ...................................................................................... 798 N9 M. o; S# ?5 t
8.3.1. Fluid dynamics......................................................................................... 79. R0 \7 p7 C; f, v7 n
8.4. Mass transport control ............................................................................................. 800 u0 g9 A! L. I/ d
9. CVD process parameters...............................................................................................80
) X e; j# U9 g3 u9.1. Coating uniformity ................................................................................................... 81' K j0 d7 Z( z& ~" l
9.2. Coating–substrate adhesion......................................................................................81
; y- G0 J' P5 t7 M, E3 d6 y. C9 l9.3. Uniformity of coating composition .......................................................................... 82% I/ q$ u& e* e
10. Process monitoring and measurement of the CVD process ..........................................82
! g$ _1 Z. }+ m! E# Z6 b10.1. Temperature .............................................................................................................884 }1 P: s# |/ k/ X
10.2. Chemical species .......................................................................................................88% l+ G. g. N: S7 Y5 |1 O
10.3. Fluid flow ................................................................................................................. 89
7 _" b3 ^' t7 e, Q, ~; S1. Process/microstructure/property relationships in CVD ....................................................89
; O; {: x. o' E: v. T4 B9 V11.1. Epitaxial growth .......................................................................................................90
* \' F: t. d& p( p/ w6 o# q }11.2. Polycrystalline growth ..............................................................................................905 H3 y2 z, B5 z3 m+ x
11.3. Whiskers ...................................................................................................................91
, @1 m8 v1 ]" I11.4. Amorphous...............................................................................................................91
6 H/ F& j4 @2 @# {) b4 ]12. Variants of CVD methods............................................................................................94
4 Q8 |# G' ~3 d( U" i12.1. Thermally activated chemical vapour deposition .....................................................949 M( [8 I# N: Z$ ^( k8 m! F! A
12.1.1. Semiconductors, dielectric and metallic films for microelectronics,0 C6 u. v. {2 }& x
optoelectronics or energy conversion devices........................................... 96
" V$ K) N# J) I8 c( ^. A2.1.2. Ceramic protective coatings ...................................................................100
, j+ y5 R- @9 d( M12.1.3. Diffusion coating....................................................................................103% e7 g& J7 [: w5 g! [2 S
12.1.4. Optical fibres ..........................................................................................104
1 \7 W& k+ Z' K12.1.5. Ceramic monofilament fibres .................................................................105
) a: j7 ^8 v H% [- c! T7 y12.1.6. Fibre coating ..........................................................................................107
' V* e3 j2 k$ h3 p$ h' b# k* H( E3 S; h12.2. Plasma enhanced chemical vapour deposition ..........................................110
" r6 S+ L6 l7 b1 U: J12.2.1. Process principles ...................................................................................1102 p( U9 u" v# y+ y. X& X6 W
12.2.2. Disadvantages and advantages of PECVD............................................111
( d# Y) f0 L. n) j% r- ?12.2.3. Examples of applications .......................................................................114
( n4 {6 A9 N. r& b12.3. Photo-assisted chemical vapour deposition ..............................................117% o" K6 @: {, Z
12.3.1. Photo-thermal ........................................................................................118
3 R, z- m, t+ S( R6 P L! l! `12.3.2. Photolytic ...............................................................................................1185 I; \+ ?7 P4 N- g3 [: y
12.3.3. Advantages.............................................................................................119
& V( p K/ X" `+ Q6 o. ]9 K G0 B12.3.4. Applications ...........................................................................................119
" g7 ^3 A. W9 I& j# v12.4. Atomic layer epitaxy process.................................................................. 121
1 U3 K/ i% I8 A g6 C2.5. Metalorganic chemical vapour deposition.....................................................122
. b' U6 m% ^: F+ M. X12.5.1. Definition ...............................................................................................122, S1 ^0 g4 J8 f/ P+ c: Y
12.5.2. Process characteristics and advantages ..................................................1248 d7 N- E6 z& G; j" W- t0 R
12.5.3. Limitations .............................................................................................125
; T" y3 d- q0 k( u12.5.4. Applications ...........................................................................................1258 t, D9 J H4 q8 @
12.6. Pulsed injection metalorganic chemical vapour deposition ........................1258 p Q, H4 }5 J
12.6.1. Problems associated with the MOCVD method, especially for the+ ?7 `% L, g. L5 h: |# B9 G3 n, `
deposition of multicomponent oxides or multilayers ............................. 125
( N7 B( |6 j$ {) E2.6.2. Solutions to the problems using single source and special precursor2 ~ N( N6 V" c) L
injection methods ................................................................................... 126% D5 s1 l8 Z1 ]7 {( W5 x8 q
2.6.3. Pulsed injection MOCVD ......................................................................126
* O: W; F8 T) ?+ b; G12.7. Aerosol assisted chemical vapour deposition .............................................1288 [' @2 n- R0 k+ H3 t
12.7.1. Pyrosol ...................................................................................................131% V/ L" U# P3 b
12.7.2. Electrostatic assisted vapour deposition.................................................133
7 o5 ~, c$ H. D$ Y, l1 r# W8 Q4 N& R12.8. Flame assisted chemical vapour deposition................................................140+ z1 n" s7 n. z. C; z
12.8.1. Flame-assisted vapour deposition ..........................................................142
; n# l, e! ^+ m; z6 z. i$ T$ X! N12.8.2. Combustion chemical vapour deposition ...............................................143
( b$ x8 g; g% M* P3 `- Q2 K8 `6 {12.9. Electrochemical vapour deposition............................................................144
6 ^2 p1 j+ r/ X4 X% q6 e12.9.1. Process principle.....................................................................................145* o" ^& Q, B! y8 d0 f
12.9.2. Kinetics and growth...............................................................................146) a! e' f' e9 z) @' u4 a- c
12.9.3. Comparison of CVD and EVD processes..............................................147- D8 ]$ h: d( |" D
12.9.4. Advantages.............................................................................................1487 v' ]; W2 @ K2 `. c
12.9.5. Technological status...............................................................................148
/ }6 M: t9 Y* m12.9.6. Other variants ........................................................................................149- K/ a0 {; B9 w( T+ F
12.10. Chemical vapour infiltration ..................................................................149" J- o2 e4 Z1 Z, P5 j
12.10.1. Applications ...........................................................................................150 d; H" s: Y2 q" X V& Y1 e& }$ i
12.10.2. Methodology..........................................................................................151
8 t1 }1 o3 `# P# X0 `' P+ O12.10.3. Various CVI processes ...........................................................................153
8 j' F& @/ L4 w2 i5 h9 @/ n13.Comparison of various CVD methods.................................................................1561 w" u8 ?; Y2 ]# o/ R" o
14.Comparison of CVD with other coating techniques ...........................................157' t) l+ {, J% G3 M& p
15. Conclusions and outlook ..................................................................................159, z2 k9 c3 Z: Z* L v
Acknowledgements....................................................................................................1607 W0 n$ M2 n3 ]$ ~2 h* z* n
References ..............................................................................................................160 |
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