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Contents
# k' O7 A+ f, b) j: q2 U1. Definition .....................................................................................................................60. R1 |6 D- h$ n8 c
2. Background .................................................................................................................60
, V. x6 R7 \3 R1 f, w2.1. Nanostructured materials .........................................................................................623 W* v/ E2 c j# u0 u
2.2. Free standing shapes ..............................................................................................62' N1 ] Z. @) l9 N
2.3. Rapid prototyping ....................................................................................................63; T) L) R$ e( D. q; [% ?
3. Advantages and disadvantages of CVD.......................................................................638 J! b% M, Y, n h0 R
4. Thin film and coating applications.................................................................................64
( j* m" p0 l% ~) b A7 v+ G5. CVD system .................................................................................................................65
" b. B. m m% i' S+ N( Z5.1. Chemical vapour precursor supply system ...............................................................66: N6 P5 D3 o% [$ X" M+ m
5.2. CVD reactor .............................................................................................................67
+ K$ l$ D6 R. g9 S5.3. The effluent gas handling system ..............................................................................67
8 N% D* y# B; A+ J# y' F: l6. Process principles and deposition mechanism...............................................................70
/ j1 q, z6 q' j& w: M7. Chemical precursors and reaction chemistry.................................................................70
& b% x! O/ k5 z2 D8 A+ A8. Thermodynamics, kinetics and mass transport phenomena...........................................72! S I) A/ h( p. { [7 S% k, F# @
8.1. Thermodynamics ...................................................................................................... 72
$ l( j2 {3 E+ C, m8.1.1. Reaction feasibility................................................................................... 72# M7 W* F) y5 U+ O: m
8.1.2. CVD phase diagram................................................................................. 75
: J( C( Y( y* r' }/ l; L; W8.2. Kinetics..................................................................................................................... 76
/ A- w% Y/ |# E4 v$ G0 C+ [) s8.3. Mass transport phenomena ...................................................................................... 79: m, X4 M/ x% X* w3 H1 O5 }. e2 r
8.3.1. Fluid dynamics......................................................................................... 79" K/ b: F- g" G1 S, R
8.4. Mass transport control ............................................................................................. 807 ]4 ?1 o2 O9 ?" Y" s' ~
9. CVD process parameters...............................................................................................80
0 |' G% x* C- m8 |* V1 G. t( r9.1. Coating uniformity ................................................................................................... 81* t6 W ^/ z2 F2 E6 W" i/ {" ?
9.2. Coating–substrate adhesion......................................................................................81
# N' W7 x, H4 a. W9 s& e9.3. Uniformity of coating composition .......................................................................... 82
6 Y7 Y' j. o1 ~2 o10. Process monitoring and measurement of the CVD process ..........................................820 j( Y( D( a, ]' X, k+ e
10.1. Temperature .............................................................................................................88( y. k; R+ d4 s6 ^& e) N$ K& H
10.2. Chemical species .......................................................................................................88 R4 V6 b2 M- A% |% Z2 ]
10.3. Fluid flow ................................................................................................................. 89+ y" O, |: `* G8 u+ p; X( D3 P( D
1. Process/microstructure/property relationships in CVD ....................................................89" o3 O( f3 Z9 P5 v! k* ~9 e
11.1. Epitaxial growth .......................................................................................................90& t r/ Z9 |9 r* y3 q# O
11.2. Polycrystalline growth ..............................................................................................90
( [4 E" c* q3 V! H: i11.3. Whiskers ...................................................................................................................919 n/ p- R, g1 W" L, }+ o+ x4 h/ Q
11.4. Amorphous...............................................................................................................91 H/ P! N1 P3 A* `0 n
12. Variants of CVD methods............................................................................................94, U; U! b7 v( u* Z' x; {, X
12.1. Thermally activated chemical vapour deposition .....................................................94% k5 d$ V. u2 c+ X8 z ~: Y2 b
12.1.1. Semiconductors, dielectric and metallic films for microelectronics,
A1 K% N: N' H- B9 J- y" o/ P0 koptoelectronics or energy conversion devices........................................... 96
, N: k' U4 A9 g8 d' `) D- r2.1.2. Ceramic protective coatings ...................................................................100
- d# s+ Y) B/ n+ B9 R12.1.3. Diffusion coating....................................................................................103$ {+ n K4 D; L1 d" a4 C
12.1.4. Optical fibres ..........................................................................................104
7 q. b+ U: l! I7 r+ }& `2 U/ {12.1.5. Ceramic monofilament fibres .................................................................105: O; L# M3 K" C2 ], h2 L8 C
12.1.6. Fibre coating ..........................................................................................1074 `2 i& D5 K1 R P9 \! I8 [
12.2. Plasma enhanced chemical vapour deposition ..........................................110
+ g! i% ]- x2 g) g5 f8 i12.2.1. Process principles ...................................................................................110
$ K, |8 w! k$ u$ v# O8 _12.2.2. Disadvantages and advantages of PECVD............................................111
' w$ v; L, y D- d- u12.2.3. Examples of applications .......................................................................114
9 [, S4 Q- k; b1 V" Q3 ]) i12.3. Photo-assisted chemical vapour deposition ..............................................117
/ `5 K. Q! I, }5 ~( q$ Z8 S5 Y12.3.1. Photo-thermal ........................................................................................118
5 ^: W, J) }- D8 r! y. S2 u12.3.2. Photolytic ...............................................................................................118! M3 a$ T- Z& W; O; b9 A
12.3.3. Advantages.............................................................................................119) B8 y+ _8 s$ H( w F
12.3.4. Applications ...........................................................................................119% {. P2 C' G5 X8 k% Y
12.4. Atomic layer epitaxy process.................................................................. 121
- X7 J* f! o8 y- i% ^8 F2.5. Metalorganic chemical vapour deposition.....................................................122
' f( J' @# j, r) }12.5.1. Definition ...............................................................................................122! X. I5 v3 v4 K
12.5.2. Process characteristics and advantages ..................................................124# a. ]$ U' x9 H( X3 t
12.5.3. Limitations .............................................................................................125( o3 x( j( {$ H7 u2 s: Y6 [8 i
12.5.4. Applications ...........................................................................................125
+ A+ j/ g) H: q u12.6. Pulsed injection metalorganic chemical vapour deposition ........................125
" I# \+ g/ q; K" u2 m# B3 R12.6.1. Problems associated with the MOCVD method, especially for the' h, {6 q1 e, y
deposition of multicomponent oxides or multilayers ............................. 1251 Y+ E; R9 J. o& Z3 W' s
2.6.2. Solutions to the problems using single source and special precursor% A' M8 B" ~+ V6 J- t, Q& g/ W
injection methods ................................................................................... 126$ K& J/ \! b' u+ j9 i
2.6.3. Pulsed injection MOCVD ......................................................................126' ?# _- G3 J/ p' h
12.7. Aerosol assisted chemical vapour deposition .............................................128# |; |- w2 z. Z5 h
12.7.1. Pyrosol ...................................................................................................131
, [/ t4 {5 ]1 ]12.7.2. Electrostatic assisted vapour deposition.................................................1334 M/ l5 {% z$ z: B. G, }
12.8. Flame assisted chemical vapour deposition................................................140% I: @* U) [0 b$ S9 r2 _: n
12.8.1. Flame-assisted vapour deposition ..........................................................142
0 m) p8 D1 k& O: j/ p% a H: q12.8.2. Combustion chemical vapour deposition ...............................................143% |0 o0 w6 C# N& c
12.9. Electrochemical vapour deposition............................................................144 o4 d# i0 t6 G8 j0 x; i$ H8 v- V
12.9.1. Process principle.....................................................................................145
e* a: S! P. m: Y12.9.2. Kinetics and growth...............................................................................146
: }! [$ m2 i) H* `! w3 K12.9.3. Comparison of CVD and EVD processes..............................................147
) {4 q" m! i" ?& |: K; E F* _12.9.4. Advantages.............................................................................................1484 F; A# q: N8 B5 ?. V& t
12.9.5. Technological status...............................................................................148, o! s: f+ \- q2 }, ?& ^) Z# ?; r
12.9.6. Other variants ........................................................................................149
% G( G3 ]; L- [7 E12.10. Chemical vapour infiltration ..................................................................149
. n# X$ H6 i% m8 A% `( V: p- ~12.10.1. Applications ...........................................................................................150. }. v/ D" K8 ~
12.10.2. Methodology..........................................................................................151. p6 t% t% @$ m S
12.10.3. Various CVI processes ...........................................................................1539 {, W: K+ h# M1 \2 ]* A; f
13.Comparison of various CVD methods.................................................................156
; b; {6 L8 l4 j* `9 C& e8 \* r14.Comparison of CVD with other coating techniques ...........................................157$ [7 j1 u& T+ e8 J
15. Conclusions and outlook ..................................................................................159: L0 d3 o' a. ?0 c/ j9 u2 l
Acknowledgements....................................................................................................160, T$ |. [' d6 g) n( S
References ..............................................................................................................160 |
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