硅片行业术语大全(中英文对照 A-H)

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硅片行业术语大全(中英文对照 A-H)

) v) w, \0 G" j9 JAcceptor - An element, such as boron, indium, and gallium used to create a free hole in a semiconductor. The acceptor atoms are required to have one less valence electron than the semiconductor.
8 B, |9 V: Q! b# O" R; b+ F* F# _$ x5 C受主 -  一种用来在半导体中形成空穴的元素，比如硼、铟和镓。受主原子必须比半导体元素少一价电子
Alignment Precision - Displacement of patterns that occurs during the photolithography process.
套准精度 - 在光刻工艺中转移图形的精度。
Anisotropic - A process of etching that has very little or no undercutting
: S) \" Q  P8 |8 I各向异性 - 在蚀刻过程中，只做少量或不做侧向凹刻。
  b* W; m! e2 P: |, I5 y) I! A$ Q: nArea Contamination - Any foreign particles or material that are found on the surface of a wafer. This is viewed as discolored or smudged, and it is the result of stains, fingerprints, water spots, etc.
沾污区域 - 任何在晶圆片表面的外来粒子或物质。由沾污、手印和水滴产生的污染。
Azimuth, in Ellipsometry - The angle measured between the plane of incidence and the major axis of the ellipse.
椭圆方位角 - 测量入射面和主晶轴之间的角度。
Backside - The bottom surface of a silicon wafer. (Note: This term is not preferred; instead, use ‘back surface’.)
; y0 A/ B9 _. T背面 - 晶圆片的底部表面。（注：不推荐该术语，建议使用“背部表面”）
Base Silicon Layer - The silicon wafer that is located underneath the insulator layer, which supports the silicon film on top of the wafer.
底部硅层 - 在绝缘层下部的晶圆片，是顶部硅层的基础。
Bipolar - Transistors that are able to use both holes and electrons as charge carriers.
4 v5 a' D. o( y5 [双极晶体管 - 能够采用空穴和电子传导电荷的晶体管。
Bonded Wafers - Two silicon wafers that have been bonded together by silicon dioxide, which acts as an insulating layer.
绑定晶圆片 - 两个晶圆片通过二氧化硅层结合到一起，作为绝缘层。
4 a0 F3 T8 n, ?: S- zBonding Interface - The area where the bonding of two wafers occurs.
绑定面 - 两个晶圆片结合的接触区。
Buried Layer - A path of low resistance for a current moving in a device. Many of these dopants are antimony and arsenic.
埋层 - 为了电路电流流动而形成的低电阻路径，搀杂剂是锑和砷。
Buried Oxide Layer (BOX) - The layer that insulates between the two wafers.
6 O0 y; ?! I9 u# m氧化埋层(BOX) - 在两个晶圆片间的绝缘层。
Carrier - Valence holes and conduction electrons that are capable of carrying a charge through a solid surface in a silicon wafer.
  ~: E- _8 ~" _- Z( g; L. s( J4 Z载流子 - 晶圆片中用来传导电流的空穴或电子。
Chemical-Mechanical Polish (CMP) - A process of flattening and polishing wafers that utilizes both chemical removal and mechanical buffing. It is used during the fabrication process.
化学-机械抛光(CMP) - 平整和抛光晶圆片的工艺，采用化学移除和机械抛光两种方式。此工艺在前道工艺中使用。
Chuck Mark - A mark found on either surface of a wafer, caused by either a robotic end effector, a chuck, or a wand.
卡盘痕迹 - 在晶圆片任意表面发现的由机械手、卡盘或托盘造成的痕迹。
7 }: q/ n4 E& I& t! ^7 u, V$ gCleavage Plane - A fracture plane that is preferred.
解理面 - 破裂面
$ \. K7 h9 B4 xCrack - A mark found on a wafer that is greater than 0.25 mm in length.
裂纹 - 长度大于0.25毫米的晶圆片表面微痕。
  e" y& ~' k# n! h* Z0 [Crater - Visible under diffused illumination, a surface imperfection on a wafer that can be distinguished individually.
微坑 - 在扩散照明下可见的，晶圆片表面可区分的缺陷。
Conductivity (electrical) - A measurement of how easily charge carriers can flow throughout a material.
4 C! P: D! \8 C) C6 U, K* r传导性（电学方面） - 一种关于载流子通过物质难易度的测量指标 。
* F7 V; Y3 @; }7 w  _Conductivity Type - The type of charge carriers in a wafer, such as “N-type” and “P-type”.
导电类型 - 晶圆片中载流子的类型，N型和P型。
* H9 B/ N  D/ e' YContaminant, Particulate (see light point defect)
+ \. J2 u8 A# P' r  ?. A& S污染微粒 （参见光点缺陷）
  f5 y  ?( {: K& y# Y* GContamination Area - An area that contains particles that can negatively affect the characteristics of a silicon wafer.
5 i& G7 }) [. w  ?' D. W沾污区域 - 部分晶圆片区域被颗粒沾污，造成不利特性影响。
3 E4 c# M- g, E+ ~0 HContamination Particulate - Particles found on the surface of a silicon wafer.
沾污颗粒 - 晶圆片表面上的颗粒。
5 i9 \& `; Q+ l! GCrystal Defect - Parts of the crystal that contain vacancies and dislocations that can have an impact on a circuit’s electrical performance.
晶体缺陷 - 部分晶体包含的、会影响电路性能的空隙和层错。
Crystal Indices (see Miller indices)
( ?7 n8 \9 E" j; l, }$ [$ i2 V& ?9 w晶体指数 （参见米勒指数）
& }: p3 C8 c4 u  V7 A! e  `) gDepletion Layer - A region on a wafer that contains an electrical field that sweeps out charge carriers.
6 Q$ R5 u' C) t1 [5 n4 P$ U- c$ I! h% A耗尽层 - 晶圆片上的电场区域，此区域排除载流子。
Dimple - A concave depression found on the surface of a wafer that is visible to the eye under the correct lighting conditions.
表面起伏 - 在合适的光线下通过肉眼可以发现的晶圆片表面凹陷。
Donor - A contaminate that has donated extra “free” electrons, thus making a wafer “N-Type”.
" O1 b2 d7 u. ^施主 - 可提供“自由”电子的搀杂物，使晶圆片呈现为N型。
Dopant - An element that contributes an electron or a hole to the conduction process, thus altering the conductivity. Dopants for silicon wafers are found in Groups III and V of the Periodic Table of the Elements.
, f" W! a) S, S; g% _% J搀杂剂 - 可以为传导过程提供电子或空穴的元素，此元素可以改变传导特性。晶圆片搀杂 剂可以在元素周期表的III 和 V族元素中发现。
6 O# Y" E# n7 a. [/ iDoping - The process of the donation of an electron or hole to the conduction process by a dopant.
掺杂 - 把搀杂剂掺入半导体，通常通过扩散或离子注入工艺实现。
$ f8 n. W! ?+ C1 @. `7 w. v  i, uEdge Chip and Indent - An edge imperfection that is greater than 0.25 mm.
" U0 O- \8 I  n芯片边缘和缩进 - 晶片中不完整的边缘部分超过0.25毫米。
2 [* Z) L- P+ z& CEdge Exclusion Area - The area located between the fixed quality area and the periphery of a wafer. (This varies according to the dimensions of the wafer.)
6 v  G7 n6 V- S边缘排除区域 - 位于质量保证区和晶圆片外围之间的区域。（根据晶圆片的尺寸不同而有所不同。）
* @5 i* H# F' h5 k9 J$ ^7 KEdge Exclusion, Nominal (EE) - The distance between the fixed quality area and the periphery of a wafer.
+ k9 {4 q3 Q# i) ?0 `/ B名义上边缘排除(EE) - 质量保证区和晶圆片外围之间的距离
Edge Profile - The edges of two bonded wafers that have been shaped either chemically or mechanically.
边缘轮廓 - 通过化学或机械方法连接起来的两个晶圆片边缘。
Etch - A process of chemical reactions or physical removal to rid the wafer of excess materials.
, O* T/ N( u+ v' U" G  H, b) V/ }蚀刻 - 通过化学反应或物理方法去除晶圆片的多余物质。
Fixed Quality Area (FQA) - The area that is most central on a wafer surface.
质量保证区(FQA) - 晶圆片表面中央的大部分。
Flat - A section of the perimeter of a wafer that has been removed for wafer orientation purposes.
平边 - 晶圆片圆周上的一个小平面，作为晶向定位的依据。
& S6 h/ o# P# X) z2 _Flat Diameter - The measurement from the center of the flat through the center of the wafer to the opposite edge of the wafer. (Perpendicular to the flat)
平口直径 - 由小平面的中心通过晶圆片中心到对面边缘的直线距离。
Four-Point Probe - Test equipment used to test resistivity of wafers.
1 O& _; K+ N: C+ I5 p! Q4 x" g# O四探针 - 测量半导体晶片表面电阻的设备。
Furnace and Thermal Processes - Equipment with a temperature gauge used for processing wafers. A constant temperature is required for the process.
炉管和热处理 - 温度测量的工艺设备，具有恒定的处理温度。
Front Side - The top side of a silicon wafer. (This term is not preferred; use front surface instead.)
( R9 c9 e9 r* f+ y" C正面 - 晶圆片的顶部表面（此术语不推荐，建议使用“前部表面”）。
8 C) m3 |/ `* x, @) `; L# q+ h5 JGoniometer - An instrument used in measuring angles.
角度计 - 用来测量角度的设备。
' y. B. k' `0 T4 [$ MGradient, Resistivity (not preferred; see resistivity variation)
电阻梯度 （不推荐使用，参见“电阻变化”）
7 j8 g9 Y9 r5 pGroove - A scratch that was not completely polished out.
凹槽 - 没有被完全清除的擦伤。
9 u3 l! h# U& V) X; BHand Scribe Mark - A marking that is hand scratched onto the back surface of a wafer for identification purposes.
手工印记 - 为区分不同的晶圆片而手工在背面做出的标记。
Haze - A mass concentration of surface imperfections, often giving a hazy appearance to the wafer.
# m3 G7 U6 a( A/ l; @# ?' d: A3 E雾度 - 晶圆片表面大量的缺陷，常常表现为晶圆片表面呈雾状。
9 r5 K" c- s, }Hole - Similar to a positive charge, this is caused by the absence of a valence electron.
空穴 - 和正电荷类似，是由缺少价电子引起的。
硅片行业术语大全(中英文对照 I-Z)

% |6 [4 K. B$ D5 @# m0 IIngot - A cylindrical solid made of polycrystalline or single crystal silicon from which wafers are cut.
晶锭 - 由多晶或单晶形成的圆柱体，晶圆片由此切割而成。
8 d4 a% o/ M, k# z6 w; y  P- |Laser Light-Scattering Event - A signal pulse that locates surface imperfections on a wafer.
% ^+ Y  Y6 Z" e3 d  V- j7 I1 U激光散射 - 由晶圆片表面缺陷引起的脉冲信号。
Lay - The main direction of surface texture on a wafer.
4 _0 A0 t7 H4 v# t" R$ ~/ u  E4 c层 - 晶圆片表面结构的主要方向。
Light Point Defect (LPD) (Not preferred; see localized light-scatterer)
光点缺陷(LPD) （不推荐使用，参见“局部光散射”）
Lithography - The process used to transfer patterns onto wafers.
光刻 - 从掩膜到圆片转移的过程。
Localized Light-Scatterer - One feature on the surface of a wafer, such as a pit or a scratch that scatters light. It is also called a light point defect.
局部光散射 - 晶圆片表面特征，例如小坑或擦伤导致光线散射，也称为光点缺陷。
Lot - Wafers of similar sizes and characteristics placed together in a shipment.
8 X+ C$ T' ]- x! j批次 - 具有相似尺寸和特性的晶圆片一并放置在一个载片器内。
Majority Carrier - A carrier, either a hole or an electron that is dominant in a specific region, such as electrons in an N-Type area.
多数载流子 - 一种载流子，在半导体材料中起支配作用的空穴或电子，例如在N型中是电子。
Mechanical Test Wafer - A silicon wafer used for testing purposes.
机械测试晶圆片 - 用于测试的晶圆片。
: E1 s% H4 j4 j$ t% o9 @8 }Microroughness - Surface roughness with spacing between the impurities with a measurement of less than 100 μm.
微粗糙 - 小于100微米的表面粗糙部分。
# _/ `. v0 h" E; F, U, D" JMiller Indices, of a Crystallographic Plane - A system that utilizes three numbers to identify plan orientation in a crystal.
. _0 q+ T( F) y1 W- l# ?! Z" Q/ hMiller索指数 - 三个整数，用于确定某个并行面。这些整数是来自相同系统的基本向量。
Minimal Conditions or Dimensions - The allowable conditions for determining whether or not a wafer is considered acceptable.
最小条件或方向 - 确定晶圆片是否合格的允许条件。
Minority Carrier - A carrier, either a hole or an electron that is not dominant in a specific region, such as electrons in a P-Type area.
少数载流子 - 在半导体材料中不起支配作用的移动电荷，在P型中是电子，在N型中是空穴。
Mound - A raised defect on the surface of a wafer measuring more than 0.25 mm.
& M- Y7 g& _2 u+ X9 k  x堆垛 - 晶圆片表面超过0.25毫米的缺陷。
Notch - An indent on the edge of a wafer used for orientation purposes.
8 ^- X" l- Y$ F# [5 r/ ~凹槽 - 晶圆片边缘上用于晶向定位的小凹槽。
2 P2 r# I+ m& aOrange Peel - A roughened surface that is visible to the unaided eye.
桔皮 - 可以用肉眼看到的粗糙表面
: n1 p4 q! n3 ^! ~( U# ~* eOrthogonal Misorientation -
0 @! _1 E, U5 n! ~' G  y直角定向误差 -
0 W6 i; q: S1 o- K! Q; R: UParticle - A small piece of material found on a wafer that is not connected with it.
颗粒 - 晶圆片上的细小物质。
  ~" h. T! A. Z1 B9 c. h" a5 j2 nParticle Counting - Wafers that are used to test tools for particle contamination.
. C+ x  \" @9 x: @/ J颗粒计算 - 用来测试晶圆片颗粒污染的测试工具。
7 t# T+ \* v  h! @& f0 NParticulate Contamination - Particles found on the surface of a wafer. They appear as bright points when a collineated light is shined on the wafer.
7 ~* n" ^& q/ ?, w$ n1 v+ N1 \颗粒污染 - 晶圆片表面的颗粒。
Pit - A non-removable imperfection found on the surface of a wafer.
& |1 }* a8 W+ T1 M深坑 - 一种晶圆片表面无法消除的缺陷。
Point Defect - A crystal defect that is an impurity, such as a lattice vacancy or an interstitial atom.
点缺陷 - 不纯净的晶缺陷，例如格子空缺或原子空隙。
Preferential Etch -
优先蚀刻 -
Premium Wafer - A wafer that can be used for particle counting, measuring pattern resolution in the photolithography process, and metal contamination monitoring. This wafer has very strict specifications for a specific usage, but looser specifications than the prime wafer.
1 M4 {9 A6 M  i测试晶圆片 - 影印过程中用于颗粒计算、测量溶解度和检测金属污染的晶圆片。对于具体应用该晶圆片有严格的要求，但是要比主晶圆片要求宽松些。
Primary Orientation Flat - The longest flat found on the wafer.
) R4 k1 r( p  g- D主定位边 - 晶圆片上最长的定位边。
Process Test Wafer - A wafer that can be used for processes as well as area cleanliness.
. D5 ]8 y1 i- T; N* I% Y加工测试晶圆片 - 用于区域清洁过程中的晶圆片。
( _8 k% q% K% P4 Q3 [' oProfilometer - A tool that is used for measuring surface topography.
表面形貌剂 - 一种用来测量晶圆片表面形貌的工具。
7 ~  n2 U1 [2 I# gResistivity (Electrical) - The amount of difficulty that charged carriers have in moving throughout material.
8 l+ O$ z: ~1 b9 y电阻率（电学方面） - 材料反抗或对抗电荷在其中通过的一种物理特性。
* B/ O' A: B* o# a; {( N' X! @6 lRequired - The minimum specifications needed by the customer when ordering wafers.
必需 - 订购晶圆片时客户必须达到的最小规格。
Roughness - The texture found on the surface of the wafer that is spaced very closely together.
5 {9 t6 G2 U( Y8 Z粗糙度 - 晶圆片表面间隙很小的纹理。
  J$ J) Z! D0 U2 Y8 G- P+ uSaw Marks - Surface irregularities
( ]6 _! P* j' `" A7 \锯痕 - 表面不规则。
7 _2 D+ ^/ A* SScan Direction - In the flatness calculation, the direction of the subsites.
扫描方向 - 平整度测量中，局部平面的方向。
Scanner Site Flatness -
局部平整度扫描仪 -
  d" k" Q, W# h$ z! u5 w0 x- hScratch - A mark that is found on the wafer surface.
# M: G( n% e) w) S/ o擦伤 - 晶圆片表面的痕迹。
Secondary Flat - A flat that is smaller than the primary orientation flat. The position of this flat determines what type the wafer is, and also the orientation of the wafer.
# s* h/ [8 z4 W- J: f0 B$ i第二定位边 - 比主定位边小的定位边，它的位置决定了晶圆片的类型和晶向。
  [( ^) V  `9 N7 K# W  F  pShape -
% c$ }4 L5 L* g6 y6 z' V9 v3 p形状 -
. A! T/ l; s8 Y7 oSite - An area on the front surface of the wafer that has sides parallel and perpendicular to the primary orientation flat. (This area is rectangular in shape)
# q; G  I8 R; o局部表面 - 晶圆片前面上平行或垂直于主定位边方向的区域。
Site Array - a neighboring set of sites
局部表面系列 - 一系列的相关局部表面。
Site Flatness -
  Y! F4 y/ H9 Z# n7 G. B) ^$ O' i局部平整 -
Slip - A defect pattern of small ridges found on the surface of the wafer.
/ I6 X8 Q1 v6 j; `划伤 - 晶圆片表面上的小皱造成的缺陷。
; y" ?! }6 ^4 |Smudge - A defect or contamination found on the wafer caused by fingerprints.
污迹 - 晶圆片上指纹造成的缺陷或污染。
! I* s* E' d1 {Sori -
Striation - Defects or contaminations found in the shape of a helix.
条痕 - 螺纹上的缺陷或污染。
: C  q  {" p) o/ bSubsite, of a Site - An area found within the site, also rectangular. The center of the subsite must be located within the original site.
7 O& @: S; X- W# V局部子表面 - 局部表面内的区域，也是矩形的。子站中心必须位于原始站点内部。
Surface Texture - Variations found on the real surface of the wafer that deviate from the reference surface.
表面纹理 - 晶圆片实际面与参考面的差异情况。
Test Wafer - A silicon wafer that is used in manufacturing for monitoring and testing purposes.
% |) Q9 b7 _/ }8 W1 U% i4 }4 j# C9 @测试晶圆片 - 用于生产中监测和测试的晶圆片。
Thickness of Top Silicon Film - The distance found between the face of the top silicon film and the surface of the oxide layer.
顶部硅膜厚度 - 顶部硅层表面和氧化层表面间的距离。
Top Silicon Film - The layer of silicon on which semiconductor devices are placed. This is located on top of the insulating layer.
顶部硅膜 - 生产半导体电路的硅层，位于绝缘层顶部。
% o. R! O) }( d8 a8 HTotal Indicator Reading (TIR) - The smallest distance between planes on the surface of the wafer.
: y" W2 ~  N# \- f: e4 q总计指示剂数(TIR) - 晶圆片表面位面间的最短距离。
  h; [. ?' g3 u0 b  ]8 XVirgin Test Wafer - A wafer that has not been used in manufacturing or other processes.
' \3 p" w& B$ t& A原始测试晶圆片 - 还没有用于生产或其他流程中的晶圆片。
Void - The lack of any sort of bond (particularly a chemical bond) at the site of bonding.
: b+ A0 [  [( R无效 - 在应该绑定的地方没有绑定（特别是化学绑定）。
1 ^$ G  v  e/ I) C8 G0 u+ NWaves - Curves and contours found on the surface of the wafer that can be seen by the naked eye.
波浪 - 晶圆片表面通过肉眼能发现的弯曲和曲线。
Waviness - Widely spaced imperfections on the surface of a wafer.
3 P9 X7 B8 G7 t+ w2 J波纹 - 晶圆片表面经常出现的缺陷。