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[书籍] 《Chemical vapour deposition of coatings》英文原版

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发表于 2008-12-23 16:01:15 | 显示全部楼层 |阅读模式 来自: 中国湖南娄底

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Contents
3 e! N# K+ E( G. ]1. Definition .....................................................................................................................60
% S+ e1 ?3 ]1 `3 ]; f2 t2. Background .................................................................................................................60, o4 i8 W* K% q  M8 w
2.1. Nanostructured materials .........................................................................................622 c7 z0 [$ z' U5 g4 r
2.2. Free standing shapes ..............................................................................................62
+ U4 P+ o; P' C2.3. Rapid prototyping ....................................................................................................63+ K! o# C# g) w
3. Advantages and disadvantages of CVD.......................................................................63+ N0 M( ~4 i7 P$ K  a
4. Thin film and coating applications.................................................................................64
, r8 R; {  g8 X5. CVD system .................................................................................................................65
& Q3 Z, [1 g. t8 j5.1. Chemical vapour precursor supply system ...............................................................665 s$ d" e% G8 ]* G
5.2. CVD reactor .............................................................................................................676 j# ^( {2 {+ l) x8 U$ T2 o
5.3. The effluent gas handling system ..............................................................................67
& S* q9 s) N- \. u$ p6. Process principles and deposition mechanism...............................................................70
3 x2 T) I! H* g& L! ~$ u1 c7. Chemical precursors and reaction chemistry.................................................................70, {4 q9 f5 N- x$ U/ r
8. Thermodynamics, kinetics and mass transport phenomena...........................................726 B. ?2 n$ o8 _- W: q& O: Z7 I" Q
8.1. Thermodynamics ......................................................................................................   72* U2 G, G- C( k5 v6 ~
8.1.1. Reaction feasibility...................................................................................                 72; E3 i/ q3 R) U: W7 }  w
8.1.2. CVD phase diagram.................................................................................                 75
4 M' F- r7 L! d* l8.2. Kinetics..................................................................................................................... 762 ^; d& m9 ]1 A$ ~
8.3. Mass transport phenomena ...................................................................................... 79
6 [) P; A# t* Y8 ?# J- u9 z8.3.1. Fluid dynamics.........................................................................................                79' a& W* b' n- f' T
8.4. Mass transport control .............................................................................................   804 @1 E& z0 f0 F! i( j9 w! _* I9 m
9. CVD process parameters...............................................................................................80
* s3 G* J% x* Y& }  n$ |9.1. Coating uniformity ...................................................................................................   81
) h( j3 @5 t# m7 y/ s" U, c9.2. Coating–substrate adhesion......................................................................................81& o3 T1 U" \: d3 `/ t1 ?
9.3. Uniformity of coating composition ..........................................................................      823 z0 Y3 \- e* a! _5 r
10. Process monitoring and measurement of the CVD process ..........................................82
$ S! [" z) [6 ~/ M' `; n10.1. Temperature .............................................................................................................88  j# U0 v" {; @
10.2. Chemical species .......................................................................................................88: l- M( [; c% j
10.3. Fluid flow .................................................................................................................    89# J5 ]' g: i5 ?) F6 K
1. Process/microstructure/property relationships in CVD ....................................................89
0 Y9 A0 Q! M8 G5 @% K11.1. Epitaxial growth .......................................................................................................902 d& m2 ]2 z& m+ N+ c+ J+ [
11.2. Polycrystalline growth ..............................................................................................90
8 _7 G$ N" I$ V11.3. Whiskers ...................................................................................................................91. |6 f) J5 E" h! k
11.4. Amorphous...............................................................................................................91% L7 k% ?2 r- q3 f8 n! W0 U# y
12. Variants of CVD methods............................................................................................94
) t. J. m( E/ X! J  G% c12.1. Thermally activated chemical vapour deposition .....................................................94
8 I7 a$ W0 Y; m12.1.1. Semiconductors, dielectric and metallic films for microelectronics,$ `  d6 ^5 B) [8 H, w5 J& R
optoelectronics or energy conversion devices...........................................          96, s1 e$ [' P3 `7 Q# |. P- ^; i9 b1 N
2.1.2. Ceramic protective coatings ...................................................................100: S6 U4 ]0 L4 ~" r
12.1.3. Diffusion coating....................................................................................1036 w2 _! @( S& [0 U
12.1.4. Optical fibres ..........................................................................................104
! J1 v2 N$ ?9 b' m" m+ F9 g& h1 N12.1.5. Ceramic monofilament fibres .................................................................105' {% v+ P' H& D. _2 ^; i% k
12.1.6. Fibre coating ..........................................................................................107* e4 L, k% ?, |, H' O0 c4 ^# n
12.2. Plasma enhanced chemical vapour deposition ..........................................110
8 I+ s  h1 m' H* ?- @1 N* W+ |12.2.1. Process principles ...................................................................................110
! P3 H' O4 y. J. l( ~7 \6 B+ i12.2.2. Disadvantages and advantages of PECVD............................................1114 A4 C9 S9 A2 C' y/ O* z3 g
12.2.3. Examples of applications .......................................................................114
+ l  Y7 ^# M; c8 m5 K9 y12.3. Photo-assisted chemical vapour deposition ..............................................117
- w: r6 Z6 G; \& R" j12.3.1. Photo-thermal ........................................................................................118! |  v' W. X+ X8 b8 ?7 {: N
12.3.2. Photolytic ...............................................................................................1187 C# V- [. H# I+ R* O" T& u
12.3.3. Advantages.............................................................................................1193 ^% S! |/ G1 B. Q7 b
12.3.4. Applications ...........................................................................................119- h7 @, }0 a, B5 T. F& A4 [
12.4. Atomic layer epitaxy process..................................................................     1213 O3 ~1 q' y) h0 ]
2.5. Metalorganic chemical vapour deposition.....................................................122+ c0 i/ G% v9 c# R) g) C. C3 b6 t* ~2 ~
12.5.1. Definition ...............................................................................................122! b* w1 o8 ~; f
12.5.2. Process characteristics and advantages ..................................................124
. K' X5 ^- _  ~- u" U' p5 y0 r12.5.3. Limitations .............................................................................................125
0 @) M! f& ]% L, {12.5.4. Applications ...........................................................................................125
$ ~5 T3 t5 ^9 w9 j$ k+ V12.6. Pulsed injection metalorganic chemical vapour deposition ........................125# u: p; E% [( b  W3 |; q
12.6.1. Problems associated with the MOCVD method, especially for the
' n0 u; l% _( E# J$ Tdeposition of multicomponent oxides or multilayers .............................                 125& D1 s5 E$ Q8 F) S+ `' @
2.6.2. Solutions to the problems using single source and special precursor$ c4 H. {! W. z- y7 a0 I
injection methods ...................................................................................           126/ @1 P, `; f  [% v8 t' N: v
2.6.3. Pulsed injection MOCVD ......................................................................126
( x6 L2 `: F! _8 S, [5 A12.7. Aerosol assisted chemical vapour deposition .............................................128
% O5 |' e& W: M: @' R, d2 T7 y6 j12.7.1. Pyrosol ...................................................................................................1317 O3 P3 C7 F/ V6 o
12.7.2. Electrostatic assisted vapour deposition.................................................133
. }6 i) ^9 P8 H) V6 H12.8. Flame assisted chemical vapour deposition................................................140# [4 Q# p& A" J: a
12.8.1. Flame-assisted vapour deposition ..........................................................142/ Y9 \; M+ m; H+ e0 V; v
12.8.2. Combustion chemical vapour deposition ...............................................143
$ K1 l4 ^' F' }* S0 o% j8 O12.9. Electrochemical vapour deposition............................................................1441 W; ?; {# x1 P! A1 _$ s
12.9.1. Process principle.....................................................................................145+ v% M" T3 w) ]* ^# t+ u8 C
12.9.2. Kinetics and growth...............................................................................146# E5 C  [) Q% |& J) O4 z
12.9.3. Comparison of CVD and EVD processes..............................................147# Z8 K, s- E. O, P
12.9.4. Advantages.............................................................................................148
7 \8 [- H2 ^2 _3 Q* t12.9.5. Technological status...............................................................................148
5 B! {+ |/ I6 S8 y/ t12.9.6. Other variants ........................................................................................1492 b9 @4 D3 A  M- j
12.10. Chemical vapour infiltration ..................................................................149
3 H! g8 U7 a/ p7 V5 I: U12.10.1. Applications ...........................................................................................150% U! Q* i- r& F
12.10.2. Methodology..........................................................................................151$ o- P% O" ]" x: r$ Y6 s
12.10.3. Various CVI processes ...........................................................................153% m# ^+ J, R# R( |
13.Comparison of various CVD methods.................................................................1562 M- v3 J  v  Z1 Q
14.Comparison of CVD with other coating techniques ...........................................1573 \+ U" m1 p( y, C
15. Conclusions and outlook ..................................................................................159
) B4 m/ a. U% w' l" OAcknowledgements....................................................................................................160# r5 @$ @% P' V1 W5 {0 i0 i& A9 e# J
References ..............................................................................................................160

Chemical vapour deposition of coatings.rar

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