硅片行业术语大全(中英文对照 A-H)

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硅片行业术语大全(中英文对照 A-H)

Acceptor - An element, such as boron, indium, and gallium used to create a free hole in a semiconductor. The acceptor atoms are required to have one less valence electron than the semiconductor.
受主 -  一种用来在半导体中形成空穴的元素，比如硼、铟和镓。受主原子必须比半导体元素少一价电子
Alignment Precision - Displacement of patterns that occurs during the photolithography process.
套准精度 - 在光刻工艺中转移图形的精度。
Anisotropic - A process of etching that has very little or no undercutting
各向异性 - 在蚀刻过程中，只做少量或不做侧向凹刻。
Area Contamination - Any foreign particles or material that are found on the surface of a wafer. This is viewed as discolored or smudged, and it is the result of stains, fingerprints, water spots, etc.
沾污区域 - 任何在晶圆片表面的外来粒子或物质。由沾污、手印和水滴产生的污染。
Azimuth, in Ellipsometry - The angle measured between the plane of incidence and the major axis of the ellipse.
椭圆方位角 - 测量入射面和主晶轴之间的角度。
- u0 M" L3 s8 U; YBackside - The bottom surface of a silicon wafer. (Note: This term is not preferred; instead, use ‘back surface’.)
背面 - 晶圆片的底部表面。（注：不推荐该术语，建议使用“背部表面”）
7 Y: O) n+ H5 N: T; BBase Silicon Layer - The silicon wafer that is located underneath the insulator layer, which supports the silicon film on top of the wafer.
底部硅层 - 在绝缘层下部的晶圆片，是顶部硅层的基础。
Bipolar - Transistors that are able to use both holes and electrons as charge carriers.
, H/ N7 i" D$ ]双极晶体管 - 能够采用空穴和电子传导电荷的晶体管。
Bonded Wafers - Two silicon wafers that have been bonded together by silicon dioxide, which acts as an insulating layer.
; E: G' W* j, K9 [2 `) i" u( o绑定晶圆片 - 两个晶圆片通过二氧化硅层结合到一起，作为绝缘层。
Bonding Interface - The area where the bonding of two wafers occurs.
绑定面 - 两个晶圆片结合的接触区。
  f: P- H& B* v- C4 K) u# b/ hBuried Layer - A path of low resistance for a current moving in a device. Many of these dopants are antimony and arsenic.
埋层 - 为了电路电流流动而形成的低电阻路径，搀杂剂是锑和砷。
! |: _4 F0 b" q) i. _  xBuried Oxide Layer (BOX) - The layer that insulates between the two wafers.
" F& b; p2 L+ h9 o, b9 d6 b# D+ J: O氧化埋层(BOX) - 在两个晶圆片间的绝缘层。
/ O+ ^/ A- T$ n# N7 I4 }Carrier - Valence holes and conduction electrons that are capable of carrying a charge through a solid surface in a silicon wafer.
) X# E/ A; B2 V3 T3 b' A5 W3 T; C0 v载流子 - 晶圆片中用来传导电流的空穴或电子。
" ?, P7 U" A0 h4 g. j4 mChemical-Mechanical Polish (CMP) - A process of flattening and polishing wafers that utilizes both chemical removal and mechanical buffing. It is used during the fabrication process.
化学-机械抛光(CMP) - 平整和抛光晶圆片的工艺，采用化学移除和机械抛光两种方式。此工艺在前道工艺中使用。
. ~2 D* `/ I' ?6 A% OChuck Mark - A mark found on either surface of a wafer, caused by either a robotic end effector, a chuck, or a wand.
1 A5 `. l( C! L卡盘痕迹 - 在晶圆片任意表面发现的由机械手、卡盘或托盘造成的痕迹。
Cleavage Plane - A fracture plane that is preferred.
解理面 - 破裂面
Crack - A mark found on a wafer that is greater than 0.25 mm in length.
2 D$ y# r2 T# k裂纹 - 长度大于0.25毫米的晶圆片表面微痕。
Crater - Visible under diffused illumination, a surface imperfection on a wafer that can be distinguished individually.
微坑 - 在扩散照明下可见的，晶圆片表面可区分的缺陷。
Conductivity (electrical) - A measurement of how easily charge carriers can flow throughout a material.
% T" w) {/ s2 `; f7 J5 h6 c' j" v传导性（电学方面） - 一种关于载流子通过物质难易度的测量指标 。
Conductivity Type - The type of charge carriers in a wafer, such as “N-type” and “P-type”.
导电类型 - 晶圆片中载流子的类型，N型和P型。
Contaminant, Particulate (see light point defect)
污染微粒 （参见光点缺陷）
Contamination Area - An area that contains particles that can negatively affect the characteristics of a silicon wafer.
9 _  R7 e6 |! @- T( y沾污区域 - 部分晶圆片区域被颗粒沾污，造成不利特性影响。
$ k2 T1 L7 Q$ K0 H' M/ e; k- cContamination Particulate - Particles found on the surface of a silicon wafer.
/ f$ q) _+ X& G$ y沾污颗粒 - 晶圆片表面上的颗粒。
Crystal Defect - Parts of the crystal that contain vacancies and dislocations that can have an impact on a circuit’s electrical performance.
" v  L/ c; L) ^' W晶体缺陷 - 部分晶体包含的、会影响电路性能的空隙和层错。
& _- _* f- A. BCrystal Indices (see Miller indices)
3 ~) Z9 A+ e8 s/ i" ]3 o晶体指数 （参见米勒指数）
Depletion Layer - A region on a wafer that contains an electrical field that sweeps out charge carriers.
5 G- X2 h. r1 I. X3 Q# q. a耗尽层 - 晶圆片上的电场区域，此区域排除载流子。
Dimple - A concave depression found on the surface of a wafer that is visible to the eye under the correct lighting conditions.
表面起伏 - 在合适的光线下通过肉眼可以发现的晶圆片表面凹陷。
Donor - A contaminate that has donated extra “free” electrons, thus making a wafer “N-Type”.
施主 - 可提供“自由”电子的搀杂物，使晶圆片呈现为N型。
: {9 c  N( r7 ]% D' @3 s9 }Dopant - An element that contributes an electron or a hole to the conduction process, thus altering the conductivity. Dopants for silicon wafers are found in Groups III and V of the Periodic Table of the Elements.
搀杂剂 - 可以为传导过程提供电子或空穴的元素，此元素可以改变传导特性。晶圆片搀杂 剂可以在元素周期表的III 和 V族元素中发现。
3 T! S5 q3 T( t' ^6 S( b3 z, UDoping - The process of the donation of an electron or hole to the conduction process by a dopant.
掺杂 - 把搀杂剂掺入半导体，通常通过扩散或离子注入工艺实现。
Edge Chip and Indent - An edge imperfection that is greater than 0.25 mm.
- ?5 G+ i7 Z4 f6 i( U9 H0 z芯片边缘和缩进 - 晶片中不完整的边缘部分超过0.25毫米。
2 v6 `0 C3 w& L" r2 Y2 Q6 G; fEdge Exclusion Area - The area located between the fixed quality area and the periphery of a wafer. (This varies according to the dimensions of the wafer.)
+ w* n4 k5 [- G7 l+ k边缘排除区域 - 位于质量保证区和晶圆片外围之间的区域。（根据晶圆片的尺寸不同而有所不同。）
Edge Exclusion, Nominal (EE) - The distance between the fixed quality area and the periphery of a wafer.
; m# `! ~* Q& z" J% X名义上边缘排除(EE) - 质量保证区和晶圆片外围之间的距离
Edge Profile - The edges of two bonded wafers that have been shaped either chemically or mechanically.
# n4 n# Z' }8 _/ S6 B! S* b* m- y5 \边缘轮廓 - 通过化学或机械方法连接起来的两个晶圆片边缘。
' A: h" o: m1 o/ m$ IEtch - A process of chemical reactions or physical removal to rid the wafer of excess materials.
蚀刻 - 通过化学反应或物理方法去除晶圆片的多余物质。
Fixed Quality Area (FQA) - The area that is most central on a wafer surface.
质量保证区(FQA) - 晶圆片表面中央的大部分。
) g# C6 N# E$ S+ B4 j: PFlat - A section of the perimeter of a wafer that has been removed for wafer orientation purposes.
" H9 s2 p& v. C* `平边 - 晶圆片圆周上的一个小平面，作为晶向定位的依据。
. L- C7 f" d# s+ H+ @# hFlat Diameter - The measurement from the center of the flat through the center of the wafer to the opposite edge of the wafer. (Perpendicular to the flat)
( I9 ~; N2 e* S# Z2 B5 b& V' {平口直径 - 由小平面的中心通过晶圆片中心到对面边缘的直线距离。
Four-Point Probe - Test equipment used to test resistivity of wafers.
9 k7 f- h4 e0 v2 B* y7 E. k四探针 - 测量半导体晶片表面电阻的设备。
" L; f4 _6 {; w7 K9 G* U1 \2 rFurnace and Thermal Processes - Equipment with a temperature gauge used for processing wafers. A constant temperature is required for the process.
( O4 O2 q+ j- L/ v0 Q炉管和热处理 - 温度测量的工艺设备，具有恒定的处理温度。
Front Side - The top side of a silicon wafer. (This term is not preferred; use front surface instead.)
7 P4 q9 k! h2 F: i" a正面 - 晶圆片的顶部表面（此术语不推荐，建议使用“前部表面”）。
Goniometer - An instrument used in measuring angles.
角度计 - 用来测量角度的设备。
Gradient, Resistivity (not preferred; see resistivity variation)
电阻梯度 （不推荐使用，参见“电阻变化”）
Groove - A scratch that was not completely polished out.
凹槽 - 没有被完全清除的擦伤。
( Q2 N% F' J- A2 O' ?6 BHand Scribe Mark - A marking that is hand scratched onto the back surface of a wafer for identification purposes.
* W0 W- U" a% I  ?1 x手工印记 - 为区分不同的晶圆片而手工在背面做出的标记。
Haze - A mass concentration of surface imperfections, often giving a hazy appearance to the wafer.
雾度 - 晶圆片表面大量的缺陷，常常表现为晶圆片表面呈雾状。
Hole - Similar to a positive charge, this is caused by the absence of a valence electron.
1 }4 {9 p& X, f1 j. d# s- w( z3 ]/ P空穴 - 和正电荷类似，是由缺少价电子引起的。
硅片行业术语大全(中英文对照 I-Z)
" S4 p, u( W7 M% H4 q
- W+ D6 p8 U' a) F0 d& d# nIngot - A cylindrical solid made of polycrystalline or single crystal silicon from which wafers are cut.
晶锭 - 由多晶或单晶形成的圆柱体，晶圆片由此切割而成。
6 _7 E- D1 M% Z% F6 u& ~Laser Light-Scattering Event - A signal pulse that locates surface imperfections on a wafer.
激光散射 - 由晶圆片表面缺陷引起的脉冲信号。
* q' A+ R1 p/ {( f, k4 ULay - The main direction of surface texture on a wafer.
层 - 晶圆片表面结构的主要方向。
# x9 E3 C' h* N$ CLight Point Defect (LPD) (Not preferred; see localized light-scatterer)
光点缺陷(LPD) （不推荐使用，参见“局部光散射”）
Lithography - The process used to transfer patterns onto wafers.
光刻 - 从掩膜到圆片转移的过程。
Localized Light-Scatterer - One feature on the surface of a wafer, such as a pit or a scratch that scatters light. It is also called a light point defect.
局部光散射 - 晶圆片表面特征，例如小坑或擦伤导致光线散射，也称为光点缺陷。
Lot - Wafers of similar sizes and characteristics placed together in a shipment.
批次 - 具有相似尺寸和特性的晶圆片一并放置在一个载片器内。
3 W' ~3 m  `  f0 V( H( ~( G7 {Majority Carrier - A carrier, either a hole or an electron that is dominant in a specific region, such as electrons in an N-Type area.
' U& S% V1 Q- N( j( A多数载流子 - 一种载流子，在半导体材料中起支配作用的空穴或电子，例如在N型中是电子。
# K3 I* c2 Y  ^: R4 q" P/ u# kMechanical Test Wafer - A silicon wafer used for testing purposes.
机械测试晶圆片 - 用于测试的晶圆片。
& R, |( L9 P* {3 L; k5 }Microroughness - Surface roughness with spacing between the impurities with a measurement of less than 100 μm.
0 t0 R8 a! t1 ]7 l, P2 |$ [0 J微粗糙 - 小于100微米的表面粗糙部分。
+ L5 S- t4 b3 I+ ^8 L- L. R" aMiller Indices, of a Crystallographic Plane - A system that utilizes three numbers to identify plan orientation in a crystal.
  ]+ C( \8 r% l6 _! F5 ?Miller索指数 - 三个整数，用于确定某个并行面。这些整数是来自相同系统的基本向量。
Minimal Conditions or Dimensions - The allowable conditions for determining whether or not a wafer is considered acceptable.
最小条件或方向 - 确定晶圆片是否合格的允许条件。
Minority Carrier - A carrier, either a hole or an electron that is not dominant in a specific region, such as electrons in a P-Type area.
( d3 X" |2 d- e- m" J少数载流子 - 在半导体材料中不起支配作用的移动电荷，在P型中是电子，在N型中是空穴。
6 ^4 E' y+ R8 z4 _) A. fMound - A raised defect on the surface of a wafer measuring more than 0.25 mm.
堆垛 - 晶圆片表面超过0.25毫米的缺陷。
' c( B4 p' F# T  @6 _Notch - An indent on the edge of a wafer used for orientation purposes.
/ Z! V4 H3 B4 ~凹槽 - 晶圆片边缘上用于晶向定位的小凹槽。
Orange Peel - A roughened surface that is visible to the unaided eye.
桔皮 - 可以用肉眼看到的粗糙表面
& c' a! D+ Y+ UOrthogonal Misorientation -
直角定向误差 -
Particle - A small piece of material found on a wafer that is not connected with it.
6 i) K$ T# {5 V  Y0 J8 h/ y颗粒 - 晶圆片上的细小物质。
$ u9 b" F3 C5 Z# r8 O1 IParticle Counting - Wafers that are used to test tools for particle contamination.
* m) c( N' d0 C5 n; W/ V5 s! }颗粒计算 - 用来测试晶圆片颗粒污染的测试工具。
7 X) V  u0 J/ w' xParticulate Contamination - Particles found on the surface of a wafer. They appear as bright points when a collineated light is shined on the wafer.
4 x5 D: P) C" ~: L0 n颗粒污染 - 晶圆片表面的颗粒。
Pit - A non-removable imperfection found on the surface of a wafer.
, V0 L+ [; ~) u6 ^0 ~9 J深坑 - 一种晶圆片表面无法消除的缺陷。
Point Defect - A crystal defect that is an impurity, such as a lattice vacancy or an interstitial atom.
% N1 V* C( U$ q* P  Q+ @点缺陷 - 不纯净的晶缺陷，例如格子空缺或原子空隙。
Preferential Etch -
1 u- Q' B0 `; f! E, n. o优先蚀刻 -
# d0 e+ h% L/ APremium Wafer - A wafer that can be used for particle counting, measuring pattern resolution in the photolithography process, and metal contamination monitoring. This wafer has very strict specifications for a specific usage, but looser specifications than the prime wafer.
+ x& H: A, j$ ~2 R( D测试晶圆片 - 影印过程中用于颗粒计算、测量溶解度和检测金属污染的晶圆片。对于具体应用该晶圆片有严格的要求，但是要比主晶圆片要求宽松些。
Primary Orientation Flat - The longest flat found on the wafer.
4 j' _1 u  R8 }  k- J& z; b主定位边 - 晶圆片上最长的定位边。
Process Test Wafer - A wafer that can be used for processes as well as area cleanliness.
加工测试晶圆片 - 用于区域清洁过程中的晶圆片。
Profilometer - A tool that is used for measuring surface topography.
表面形貌剂 - 一种用来测量晶圆片表面形貌的工具。
Resistivity (Electrical) - The amount of difficulty that charged carriers have in moving throughout material.
# A1 ~8 d4 n8 u5 x9 H3 {6 n! Z  E电阻率（电学方面） - 材料反抗或对抗电荷在其中通过的一种物理特性。
/ @& S. L- A  |6 g) P2 DRequired - The minimum specifications needed by the customer when ordering wafers.
必需 - 订购晶圆片时客户必须达到的最小规格。
Roughness - The texture found on the surface of the wafer that is spaced very closely together.
7 P& b5 G6 I6 V) J2 V: `粗糙度 - 晶圆片表面间隙很小的纹理。
/ _' h4 C1 Q$ _; A+ L" X* W9 OSaw Marks - Surface irregularities
9 X( M+ l4 S, H" E锯痕 - 表面不规则。
1 K' y" r+ _; G) X# g1 C- d; vScan Direction - In the flatness calculation, the direction of the subsites.
; }" z4 m& \+ H! @6 z扫描方向 - 平整度测量中，局部平面的方向。
Scanner Site Flatness -
2 D: }) a/ }8 N- _2 c8 q局部平整度扫描仪 -
Scratch - A mark that is found on the wafer surface.
* L- X! Q$ d1 }1 o7 J+ ~/ d  F擦伤 - 晶圆片表面的痕迹。
$ Q+ e- S- F4 x9 H1 V9 qSecondary Flat - A flat that is smaller than the primary orientation flat. The position of this flat determines what type the wafer is, and also the orientation of the wafer.
第二定位边 - 比主定位边小的定位边，它的位置决定了晶圆片的类型和晶向。
: e% \3 D. M# \: ?" OShape -
形状 -
Site - An area on the front surface of the wafer that has sides parallel and perpendicular to the primary orientation flat. (This area is rectangular in shape)
, Q$ w; O$ N9 a: t局部表面 - 晶圆片前面上平行或垂直于主定位边方向的区域。
+ F7 Z; z$ m4 u3 DSite Array - a neighboring set of sites
局部表面系列 - 一系列的相关局部表面。
Site Flatness -
) I" y1 b: E9 p局部平整 -
1 [1 c* t( Q& ySlip - A defect pattern of small ridges found on the surface of the wafer.
0 j6 V) ?8 J0 D5 W, ~/ k" v划伤 - 晶圆片表面上的小皱造成的缺陷。
( R/ B3 E$ S( r9 |+ tSmudge - A defect or contamination found on the wafer caused by fingerprints.
  d1 R  F$ ]) U2 l- E! L污迹 - 晶圆片上指纹造成的缺陷或污染。
8 Y6 e5 f0 Q5 `" TSori -
Striation - Defects or contaminations found in the shape of a helix.
/ w0 \; C  J  u5 B" U/ O% h条痕 - 螺纹上的缺陷或污染。
' l. T3 t& W! u0 X  M* lSubsite, of a Site - An area found within the site, also rectangular. The center of the subsite must be located within the original site.
8 G: ~! s& Z5 _  E$ a6 s局部子表面 - 局部表面内的区域，也是矩形的。子站中心必须位于原始站点内部。
: o7 Z1 f2 P; h) s$ p7 |Surface Texture - Variations found on the real surface of the wafer that deviate from the reference surface.
) j. P7 s& L- j$ B" t# V表面纹理 - 晶圆片实际面与参考面的差异情况。
Test Wafer - A silicon wafer that is used in manufacturing for monitoring and testing purposes.
测试晶圆片 - 用于生产中监测和测试的晶圆片。
  a: Z# C- s! V- |2 _Thickness of Top Silicon Film - The distance found between the face of the top silicon film and the surface of the oxide layer.
顶部硅膜厚度 - 顶部硅层表面和氧化层表面间的距离。
Top Silicon Film - The layer of silicon on which semiconductor devices are placed. This is located on top of the insulating layer.
$ R, p0 p  _& U2 B" V2 A+ W顶部硅膜 - 生产半导体电路的硅层，位于绝缘层顶部。
Total Indicator Reading (TIR) - The smallest distance between planes on the surface of the wafer.
1 s8 ^4 c' _. |3 p1 m+ b总计指示剂数(TIR) - 晶圆片表面位面间的最短距离。
Virgin Test Wafer - A wafer that has not been used in manufacturing or other processes.
原始测试晶圆片 - 还没有用于生产或其他流程中的晶圆片。
8 d/ |0 c1 O) \% n2 C" E/ a7 zVoid - The lack of any sort of bond (particularly a chemical bond) at the site of bonding.
无效 - 在应该绑定的地方没有绑定（特别是化学绑定）。
0 Q+ O3 S8 y& ]! tWaves - Curves and contours found on the surface of the wafer that can be seen by the naked eye.
波浪 - 晶圆片表面通过肉眼能发现的弯曲和曲线。
& C; T1 ^( ]$ Q8 c/ I8 s6 Q7 ~Waviness - Widely spaced imperfections on the surface of a wafer.
0 l0 [* y  e7 F' e# S$ v波纹 - 晶圆片表面经常出现的缺陷。