|
|
马上注册,结识高手,享用更多资源,轻松玩转三维网社区。
您需要 登录 才可以下载或查看,没有帐号?注册
x
Contents
& P/ ]- |) [1 W9 G. h1. Definition .....................................................................................................................60
5 a. [$ h8 u4 K9 ]; N: w: G2 _- f2. Background .................................................................................................................60
0 O2 E+ |5 H2 \# U% j9 U4 G2.1. Nanostructured materials .........................................................................................621 U$ r! t6 b: J6 M* G& T* i
2.2. Free standing shapes ..............................................................................................62
* p0 G; I& h: y+ \ i2.3. Rapid prototyping ....................................................................................................63
# u. q# N7 i. F" m% k f3. Advantages and disadvantages of CVD.......................................................................638 p5 Z) c8 z, r2 H1 F& \* ]. v, e
4. Thin film and coating applications.................................................................................645 `8 ^7 B, Q. Q7 t& ^2 S( p
5. CVD system .................................................................................................................656 p' C2 V" |0 s
5.1. Chemical vapour precursor supply system ...............................................................66
2 {4 }7 S, g# ~* S' g7 X& R5.2. CVD reactor .............................................................................................................670 Z" E1 a* s: r( E- R+ {# f
5.3. The effluent gas handling system ..............................................................................67
/ u2 ]3 O. D0 f3 t- L6. Process principles and deposition mechanism...............................................................70
: k J# M* ~ u% P) |& U% F7. Chemical precursors and reaction chemistry.................................................................70
& x% x6 T9 L/ s8. Thermodynamics, kinetics and mass transport phenomena...........................................72$ ~* Z! D# J9 e# }- s( R( t
8.1. Thermodynamics ...................................................................................................... 72
% _* [: |8 W; `$ S ^, y8.1.1. Reaction feasibility................................................................................... 722 z2 L x: N+ g! ~) i3 P% Z* Q
8.1.2. CVD phase diagram................................................................................. 75
7 K: m4 t2 @. ?6 v8.2. Kinetics..................................................................................................................... 76
7 _" Q, h4 ?7 H: y9 U, h8.3. Mass transport phenomena ...................................................................................... 79& e4 C" v4 ^5 ~1 O6 F
8.3.1. Fluid dynamics......................................................................................... 79
0 B9 p1 v) k- K& c8.4. Mass transport control ............................................................................................. 80/ G7 k6 W8 x! E( G3 f4 k+ q
9. CVD process parameters...............................................................................................80' H w" C! ~- ]# [. t
9.1. Coating uniformity ................................................................................................... 81$ n8 \: Z7 Q4 ]9 ~9 a1 r: t E
9.2. Coating–substrate adhesion......................................................................................81
) U+ R: L N7 f9 I9.3. Uniformity of coating composition .......................................................................... 823 }. Z3 T+ g4 y6 d$ b6 [
10. Process monitoring and measurement of the CVD process ..........................................82
$ p4 ]1 j. f, y9 }0 q. i10.1. Temperature .............................................................................................................88
. }( W+ ^1 b% J4 s+ j10.2. Chemical species .......................................................................................................88! d9 ~1 u+ x8 d' N
10.3. Fluid flow ................................................................................................................. 89- ?( i2 l# q, ]9 F
1. Process/microstructure/property relationships in CVD ....................................................89 T7 Q& P7 X+ \: g ?/ @
11.1. Epitaxial growth .......................................................................................................906 l: l: A3 ~6 a" U! K$ R8 b/ l8 X
11.2. Polycrystalline growth ..............................................................................................90% ?, k5 ]4 {; A5 u2 n8 m( B
11.3. Whiskers ...................................................................................................................911 D! q* I, S; ~5 p
11.4. Amorphous...............................................................................................................91: m' l: y' D: u. ~8 \ L. y. s
12. Variants of CVD methods............................................................................................94) \; t# N; V$ c" i, d3 r
12.1. Thermally activated chemical vapour deposition .....................................................94! l/ I/ L y2 T- c3 b1 q
12.1.1. Semiconductors, dielectric and metallic films for microelectronics,- ]2 g2 M- t( B3 t9 a d
optoelectronics or energy conversion devices........................................... 96$ a& Y/ B7 K3 l+ ^$ }
2.1.2. Ceramic protective coatings ...................................................................100
+ |1 Q l- {4 e) y( r) `0 {9 _12.1.3. Diffusion coating....................................................................................103 d5 s; m+ x' U8 E. k
12.1.4. Optical fibres ..........................................................................................104" Y2 h& L: o5 C" P$ \8 z& ?6 H8 [
12.1.5. Ceramic monofilament fibres .................................................................105
4 Z( l& ~( G# c( w& c- u i/ E8 k$ p12.1.6. Fibre coating ..........................................................................................107
2 O0 Q; j2 ?8 m5 }; |( H12.2. Plasma enhanced chemical vapour deposition ..........................................1105 c6 e+ {: @ f5 [
12.2.1. Process principles ...................................................................................110
. G. L6 ?8 \6 h4 g" {% J! I) O12.2.2. Disadvantages and advantages of PECVD............................................111
: w- r9 s& r7 I' r# h! S4 u12.2.3. Examples of applications .......................................................................1148 K: P' D& m# p ^
12.3. Photo-assisted chemical vapour deposition ..............................................1178 Q" @/ Q0 M' r( ]
12.3.1. Photo-thermal ........................................................................................118# h* c0 B8 P: W' N' j
12.3.2. Photolytic ...............................................................................................118, f9 o7 Y) `* ?3 k& |' Y
12.3.3. Advantages.............................................................................................119
s( [/ I0 Y% i/ R12.3.4. Applications ...........................................................................................119$ X- A2 d, ~9 j4 s* ]- `6 p
12.4. Atomic layer epitaxy process.................................................................. 1217 ^4 ~$ e$ \7 |, t8 v- o
2.5. Metalorganic chemical vapour deposition.....................................................122/ u* y' I1 B3 E& |8 H+ `
12.5.1. Definition ...............................................................................................122) {* q" [ X, u s8 v
12.5.2. Process characteristics and advantages ..................................................1249 l9 \% q8 I9 E. Q! U L
12.5.3. Limitations .............................................................................................125
* m6 L( B) M- j5 r5 e- e12.5.4. Applications ...........................................................................................125
! x) P2 e% S5 e8 Q12.6. Pulsed injection metalorganic chemical vapour deposition ........................125
" F: H9 n: f' R: I% `. `12.6.1. Problems associated with the MOCVD method, especially for the
: ?( b- a/ \3 \4 Z7 A. tdeposition of multicomponent oxides or multilayers ............................. 125
. {3 G: Z" o; v2.6.2. Solutions to the problems using single source and special precursor& I' o6 I! N, ~5 y
injection methods ................................................................................... 1268 V- X, o& A7 P9 n5 f( `4 ?4 S6 @
2.6.3. Pulsed injection MOCVD ......................................................................1267 z" k; N9 ^3 F5 d) g$ ]$ ~! H
12.7. Aerosol assisted chemical vapour deposition .............................................128$ y' k8 k. }4 ?9 w$ J
12.7.1. Pyrosol ...................................................................................................131
$ c, W$ _, T! V4 X. J2 T6 ]" L: I12.7.2. Electrostatic assisted vapour deposition.................................................133
# m l9 u8 z5 u* E! n12.8. Flame assisted chemical vapour deposition................................................140
, @ E" y: b2 g+ E12.8.1. Flame-assisted vapour deposition ..........................................................142
' Z7 i$ g( m+ u- k* m, p+ X0 z12.8.2. Combustion chemical vapour deposition ...............................................143
6 T- V9 i6 l) u2 c! \# O" P# O; ~$ `& Y12.9. Electrochemical vapour deposition............................................................144. a, a& V+ e9 t0 i8 T( |
12.9.1. Process principle.....................................................................................145 E: ?$ |. ?; w, W* t1 l4 Y
12.9.2. Kinetics and growth...............................................................................146
0 y: F$ C i7 @8 q) {% i12.9.3. Comparison of CVD and EVD processes..............................................1470 i! `( h1 H3 o( P! W
12.9.4. Advantages.............................................................................................148
: B5 m) H( a R L/ c! e! O12.9.5. Technological status...............................................................................148
; `" l3 `8 u0 K; ]" r8 P12.9.6. Other variants ........................................................................................1499 W" d2 {) j a$ U* u- q
12.10. Chemical vapour infiltration ..................................................................1495 P% u0 H$ t% p$ p. J" J
12.10.1. Applications ...........................................................................................150% G# U+ O3 t1 T9 B9 G8 s- ]
12.10.2. Methodology..........................................................................................151
1 K- D R. r; _4 d ^7 S- {12.10.3. Various CVI processes ...........................................................................153
" O: k' y6 A$ O x' j' |( j4 ]13.Comparison of various CVD methods.................................................................1566 J9 Y4 R5 g& @! A, \1 _) n5 K) s
14.Comparison of CVD with other coating techniques ...........................................157
* ?0 r8 D: m. d& d s15. Conclusions and outlook ..................................................................................1592 o; z5 L ]* k( i7 D
Acknowledgements....................................................................................................160
3 U/ ~! B: T' w3 X gReferences ..............................................................................................................160 |
评分
-
查看全部评分
|