硅片行业术语大全(中英文对照 A-H)

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硅片行业术语大全(中英文对照 A-H)
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Acceptor - An element, such as boron, indium, and gallium used to create a free hole in a semiconductor. The acceptor atoms are required to have one less valence electron than the semiconductor.
6 m$ K& j7 W0 i# \' |- q受主 -  一种用来在半导体中形成空穴的元素，比如硼、铟和镓。受主原子必须比半导体元素少一价电子
1 X. V1 E6 b7 n8 @9 XAlignment Precision - Displacement of patterns that occurs during the photolithography process.
+ h2 P; G" y4 W6 g& ^套准精度 - 在光刻工艺中转移图形的精度。
  Q! d/ l3 P# R! X# Y. ~6 H2 D3 FAnisotropic - A process of etching that has very little or no undercutting
各向异性 - 在蚀刻过程中，只做少量或不做侧向凹刻。
Area Contamination - Any foreign particles or material that are found on the surface of a wafer. This is viewed as discolored or smudged, and it is the result of stains, fingerprints, water spots, etc.
6 Z, q' ?- ]# ]2 E9 b沾污区域 - 任何在晶圆片表面的外来粒子或物质。由沾污、手印和水滴产生的污染。
% P) @& M2 w  LAzimuth, in Ellipsometry - The angle measured between the plane of incidence and the major axis of the ellipse.
椭圆方位角 - 测量入射面和主晶轴之间的角度。
$ A3 ?0 g# R6 |8 HBackside - The bottom surface of a silicon wafer. (Note: This term is not preferred; instead, use ‘back surface’.)
背面 - 晶圆片的底部表面。（注：不推荐该术语，建议使用“背部表面”）
Base Silicon Layer - The silicon wafer that is located underneath the insulator layer, which supports the silicon film on top of the wafer.
底部硅层 - 在绝缘层下部的晶圆片，是顶部硅层的基础。
Bipolar - Transistors that are able to use both holes and electrons as charge carriers.
1 H! H2 V; I7 u: ^双极晶体管 - 能够采用空穴和电子传导电荷的晶体管。
7 Y$ s8 g  ?2 |3 [0 ?0 H! ^6 rBonded Wafers - Two silicon wafers that have been bonded together by silicon dioxide, which acts as an insulating layer.
9 v' g- Y: R% K0 S3 {7 h/ @绑定晶圆片 - 两个晶圆片通过二氧化硅层结合到一起，作为绝缘层。
7 t0 R4 Y1 W, A# ^Bonding Interface - The area where the bonding of two wafers occurs.
绑定面 - 两个晶圆片结合的接触区。
Buried Layer - A path of low resistance for a current moving in a device. Many of these dopants are antimony and arsenic.
埋层 - 为了电路电流流动而形成的低电阻路径，搀杂剂是锑和砷。
7 e! p( A$ A6 }. zBuried Oxide Layer (BOX) - The layer that insulates between the two wafers.
氧化埋层(BOX) - 在两个晶圆片间的绝缘层。
% f0 B) z9 _, LCarrier - Valence holes and conduction electrons that are capable of carrying a charge through a solid surface in a silicon wafer.
5 l" Q" W! E* F载流子 - 晶圆片中用来传导电流的空穴或电子。
Chemical-Mechanical Polish (CMP) - A process of flattening and polishing wafers that utilizes both chemical removal and mechanical buffing. It is used during the fabrication process.
化学-机械抛光(CMP) - 平整和抛光晶圆片的工艺，采用化学移除和机械抛光两种方式。此工艺在前道工艺中使用。
7 Z( F) p% U8 l9 `, jChuck Mark - A mark found on either surface of a wafer, caused by either a robotic end effector, a chuck, or a wand.
0 Z! R' r- t" l; t& X卡盘痕迹 - 在晶圆片任意表面发现的由机械手、卡盘或托盘造成的痕迹。
$ w, u- S0 |- x4 HCleavage Plane - A fracture plane that is preferred.
& G, `3 S* ^/ O0 d' u/ m解理面 - 破裂面
Crack - A mark found on a wafer that is greater than 0.25 mm in length.
( i9 B+ V% I+ @( F5 V! B. g! \裂纹 - 长度大于0.25毫米的晶圆片表面微痕。
5 w& l+ V3 g& k- L/ LCrater - Visible under diffused illumination, a surface imperfection on a wafer that can be distinguished individually.
微坑 - 在扩散照明下可见的，晶圆片表面可区分的缺陷。
3 W3 L$ C- u; o; h  zConductivity (electrical) - A measurement of how easily charge carriers can flow throughout a material.
6 V8 B. S% l: U8 `9 C传导性（电学方面） - 一种关于载流子通过物质难易度的测量指标 。
Conductivity Type - The type of charge carriers in a wafer, such as “N-type” and “P-type”.
导电类型 - 晶圆片中载流子的类型，N型和P型。
Contaminant, Particulate (see light point defect)
# V: z3 V& B$ u& O6 V污染微粒 （参见光点缺陷）
Contamination Area - An area that contains particles that can negatively affect the characteristics of a silicon wafer.
) D7 U: s! t5 p1 h4 v沾污区域 - 部分晶圆片区域被颗粒沾污，造成不利特性影响。
# C9 g' N/ O9 ]& ]9 |Contamination Particulate - Particles found on the surface of a silicon wafer.
沾污颗粒 - 晶圆片表面上的颗粒。
' W$ J5 F  N' j6 s8 l5 G6 c+ @9 [Crystal Defect - Parts of the crystal that contain vacancies and dislocations that can have an impact on a circuit’s electrical performance.
晶体缺陷 - 部分晶体包含的、会影响电路性能的空隙和层错。
4 y$ o9 F$ S$ x" M- t% I! h2 @Crystal Indices (see Miller indices)
/ [( m. |  x! I$ {9 }6 w/ v- h. Y晶体指数 （参见米勒指数）
Depletion Layer - A region on a wafer that contains an electrical field that sweeps out charge carriers.
3 s  B% }8 R# l  _: f4 h耗尽层 - 晶圆片上的电场区域，此区域排除载流子。
Dimple - A concave depression found on the surface of a wafer that is visible to the eye under the correct lighting conditions.
( a. H* Y7 M( ~3 ^5 A2 Q表面起伏 - 在合适的光线下通过肉眼可以发现的晶圆片表面凹陷。
Donor - A contaminate that has donated extra “free” electrons, thus making a wafer “N-Type”.
施主 - 可提供“自由”电子的搀杂物，使晶圆片呈现为N型。
! N- L) z* |9 w% g0 tDopant - An element that contributes an electron or a hole to the conduction process, thus altering the conductivity. Dopants for silicon wafers are found in Groups III and V of the Periodic Table of the Elements.
% E+ a5 O, y2 C/ B5 h; @搀杂剂 - 可以为传导过程提供电子或空穴的元素，此元素可以改变传导特性。晶圆片搀杂 剂可以在元素周期表的III 和 V族元素中发现。
Doping - The process of the donation of an electron or hole to the conduction process by a dopant.
& z7 F; ?; l: H4 l9 x1 r# y1 \/ ]/ J掺杂 - 把搀杂剂掺入半导体，通常通过扩散或离子注入工艺实现。
  b1 a5 Q4 a1 q: h" H; v3 jEdge Chip and Indent - An edge imperfection that is greater than 0.25 mm.
芯片边缘和缩进 - 晶片中不完整的边缘部分超过0.25毫米。
Edge Exclusion Area - The area located between the fixed quality area and the periphery of a wafer. (This varies according to the dimensions of the wafer.)
边缘排除区域 - 位于质量保证区和晶圆片外围之间的区域。（根据晶圆片的尺寸不同而有所不同。）
Edge Exclusion, Nominal (EE) - The distance between the fixed quality area and the periphery of a wafer.
名义上边缘排除(EE) - 质量保证区和晶圆片外围之间的距离
Edge Profile - The edges of two bonded wafers that have been shaped either chemically or mechanically.
边缘轮廓 - 通过化学或机械方法连接起来的两个晶圆片边缘。
' ^  s  O5 s( `" Y# zEtch - A process of chemical reactions or physical removal to rid the wafer of excess materials.
蚀刻 - 通过化学反应或物理方法去除晶圆片的多余物质。
Fixed Quality Area (FQA) - The area that is most central on a wafer surface.
质量保证区(FQA) - 晶圆片表面中央的大部分。
Flat - A section of the perimeter of a wafer that has been removed for wafer orientation purposes.
平边 - 晶圆片圆周上的一个小平面，作为晶向定位的依据。
Flat Diameter - The measurement from the center of the flat through the center of the wafer to the opposite edge of the wafer. (Perpendicular to the flat)
平口直径 - 由小平面的中心通过晶圆片中心到对面边缘的直线距离。
Four-Point Probe - Test equipment used to test resistivity of wafers.
4 W- O: G. K+ b, M* M8 I/ ?7 e" D四探针 - 测量半导体晶片表面电阻的设备。
Furnace and Thermal Processes - Equipment with a temperature gauge used for processing wafers. A constant temperature is required for the process.
2 H4 @  k  Y9 j. d+ A炉管和热处理 - 温度测量的工艺设备，具有恒定的处理温度。
! V7 a: I, w1 q# JFront Side - The top side of a silicon wafer. (This term is not preferred; use front surface instead.)
正面 - 晶圆片的顶部表面（此术语不推荐，建议使用“前部表面”）。
  G; d! d5 o7 rGoniometer - An instrument used in measuring angles.
( b7 J5 W- N4 {2 n角度计 - 用来测量角度的设备。
Gradient, Resistivity (not preferred; see resistivity variation)
( o4 ~9 q' }2 ]/ P7 y2 ~7 O' ^- u电阻梯度 （不推荐使用，参见“电阻变化”）
9 W2 y( T. y7 y* |Groove - A scratch that was not completely polished out.
; a$ P$ [: y% ?0 I8 j7 R凹槽 - 没有被完全清除的擦伤。
" }& H) w8 |9 H1 |- E2 THand Scribe Mark - A marking that is hand scratched onto the back surface of a wafer for identification purposes.
; W# l0 K1 m( S. a5 f* R5 o; d手工印记 - 为区分不同的晶圆片而手工在背面做出的标记。
Haze - A mass concentration of surface imperfections, often giving a hazy appearance to the wafer.
8 O9 \6 S. w$ X0 z" c% x' Y+ g6 R# O- u雾度 - 晶圆片表面大量的缺陷，常常表现为晶圆片表面呈雾状。
6 U' l0 |8 P" l4 S6 JHole - Similar to a positive charge, this is caused by the absence of a valence electron.
/ ?6 O$ m9 D1 q; }! f( Q. X# h空穴 - 和正电荷类似，是由缺少价电子引起的。
硅片行业术语大全(中英文对照 I-Z)
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" z, h3 c$ Y( `& M+ K. [- C9 QIngot - A cylindrical solid made of polycrystalline or single crystal silicon from which wafers are cut.
晶锭 - 由多晶或单晶形成的圆柱体，晶圆片由此切割而成。
, I' }/ [, Z  P( \Laser Light-Scattering Event - A signal pulse that locates surface imperfections on a wafer.
" Q% g1 I9 N( }- r. ~激光散射 - 由晶圆片表面缺陷引起的脉冲信号。
Lay - The main direction of surface texture on a wafer.
* ^0 Y& ?+ U/ p( X5 S0 Q6 L/ i层 - 晶圆片表面结构的主要方向。
2 @1 `/ h- W- L8 o" U( e. yLight Point Defect (LPD) (Not preferred; see localized light-scatterer)
! S* ~4 f, ~- K4 T! K: p光点缺陷(LPD) （不推荐使用，参见“局部光散射”）
Lithography - The process used to transfer patterns onto wafers.
8 Y* X/ z# N  Z4 e6 x2 y+ {. ]光刻 - 从掩膜到圆片转移的过程。
- Q# n; @1 l( ~; f& r: f6 vLocalized Light-Scatterer - One feature on the surface of a wafer, such as a pit or a scratch that scatters light. It is also called a light point defect.
局部光散射 - 晶圆片表面特征，例如小坑或擦伤导致光线散射，也称为光点缺陷。
Lot - Wafers of similar sizes and characteristics placed together in a shipment.
! I3 c7 B* E% h! D* e( G批次 - 具有相似尺寸和特性的晶圆片一并放置在一个载片器内。
8 a4 Z0 h" w) f; lMajority Carrier - A carrier, either a hole or an electron that is dominant in a specific region, such as electrons in an N-Type area.
多数载流子 - 一种载流子，在半导体材料中起支配作用的空穴或电子，例如在N型中是电子。
Mechanical Test Wafer - A silicon wafer used for testing purposes.
机械测试晶圆片 - 用于测试的晶圆片。
Microroughness - Surface roughness with spacing between the impurities with a measurement of less than 100 μm.
微粗糙 - 小于100微米的表面粗糙部分。
Miller Indices, of a Crystallographic Plane - A system that utilizes three numbers to identify plan orientation in a crystal.
Miller索指数 - 三个整数，用于确定某个并行面。这些整数是来自相同系统的基本向量。
: j4 c3 e7 E8 n8 H/ W( xMinimal Conditions or Dimensions - The allowable conditions for determining whether or not a wafer is considered acceptable.
最小条件或方向 - 确定晶圆片是否合格的允许条件。
Minority Carrier - A carrier, either a hole or an electron that is not dominant in a specific region, such as electrons in a P-Type area.
  {  S0 ^9 g; ?6 j0 P; \  v. F7 s少数载流子 - 在半导体材料中不起支配作用的移动电荷，在P型中是电子，在N型中是空穴。
9 R/ F# _+ i' z8 Y: _* o$ iMound - A raised defect on the surface of a wafer measuring more than 0.25 mm.
% p, P7 j; k7 v9 z, f5 @9 e堆垛 - 晶圆片表面超过0.25毫米的缺陷。
Notch - An indent on the edge of a wafer used for orientation purposes.
凹槽 - 晶圆片边缘上用于晶向定位的小凹槽。
Orange Peel - A roughened surface that is visible to the unaided eye.
+ r7 l- P) @6 O- n桔皮 - 可以用肉眼看到的粗糙表面
9 P8 d% }  `6 q9 k/ s" H7 x2 ?7 ?Orthogonal Misorientation -
直角定向误差 -
) A( p2 D2 d" A" t) T5 nParticle - A small piece of material found on a wafer that is not connected with it.
! x& Z$ L3 g; S8 b# N( d颗粒 - 晶圆片上的细小物质。
+ w- s3 h8 O) h2 j# B& S) ZParticle Counting - Wafers that are used to test tools for particle contamination.
颗粒计算 - 用来测试晶圆片颗粒污染的测试工具。
Particulate Contamination - Particles found on the surface of a wafer. They appear as bright points when a collineated light is shined on the wafer.
9 I+ g3 f+ c! W/ W颗粒污染 - 晶圆片表面的颗粒。
Pit - A non-removable imperfection found on the surface of a wafer.
0 W0 I$ v8 {" \- l# y) ~3 i( l深坑 - 一种晶圆片表面无法消除的缺陷。
0 z0 i. m7 F7 j4 p2 i& [# q  h  FPoint Defect - A crystal defect that is an impurity, such as a lattice vacancy or an interstitial atom.
点缺陷 - 不纯净的晶缺陷，例如格子空缺或原子空隙。
2 S( q7 P; {, \' q- D% M4 `Preferential Etch -
6 W! d# m* y& D& y; B7 m优先蚀刻 -
: z7 P5 |& Z5 C! U$ M  T9 YPremium Wafer - A wafer that can be used for particle counting, measuring pattern resolution in the photolithography process, and metal contamination monitoring. This wafer has very strict specifications for a specific usage, but looser specifications than the prime wafer.
3 K& m! C$ a" i测试晶圆片 - 影印过程中用于颗粒计算、测量溶解度和检测金属污染的晶圆片。对于具体应用该晶圆片有严格的要求，但是要比主晶圆片要求宽松些。
Primary Orientation Flat - The longest flat found on the wafer.
主定位边 - 晶圆片上最长的定位边。
Process Test Wafer - A wafer that can be used for processes as well as area cleanliness.
加工测试晶圆片 - 用于区域清洁过程中的晶圆片。
3 o6 F' {( K; {# uProfilometer - A tool that is used for measuring surface topography.
表面形貌剂 - 一种用来测量晶圆片表面形貌的工具。
Resistivity (Electrical) - The amount of difficulty that charged carriers have in moving throughout material.
( E  ~3 O. j) L% k: X电阻率（电学方面） - 材料反抗或对抗电荷在其中通过的一种物理特性。
Required - The minimum specifications needed by the customer when ordering wafers.
, e) c/ j" G4 n1 A必需 - 订购晶圆片时客户必须达到的最小规格。
Roughness - The texture found on the surface of the wafer that is spaced very closely together.
粗糙度 - 晶圆片表面间隙很小的纹理。
4 `. m0 e1 {, N3 o3 jSaw Marks - Surface irregularities
锯痕 - 表面不规则。
+ M% u7 j7 j) o9 G+ K  m6 ]% rScan Direction - In the flatness calculation, the direction of the subsites.
扫描方向 - 平整度测量中，局部平面的方向。
+ R% I& _* N% i0 n. E; WScanner Site Flatness -
' A8 U8 Y* w7 h5 H9 w- x1 D局部平整度扫描仪 -
, {' q$ n. n  Y* z9 w$ RScratch - A mark that is found on the wafer surface.
擦伤 - 晶圆片表面的痕迹。
Secondary Flat - A flat that is smaller than the primary orientation flat. The position of this flat determines what type the wafer is, and also the orientation of the wafer.
4 H$ v: s/ i# [* Y* y. r  {第二定位边 - 比主定位边小的定位边，它的位置决定了晶圆片的类型和晶向。
# }0 U6 b' I5 ]' m% V9 n6 S8 Y3 X( ^Shape -
形状 -
: b! E+ V) H4 l, ]( V* B; [Site - An area on the front surface of the wafer that has sides parallel and perpendicular to the primary orientation flat. (This area is rectangular in shape)
7 v1 e8 u/ P& x% \5 R' t, X局部表面 - 晶圆片前面上平行或垂直于主定位边方向的区域。
Site Array - a neighboring set of sites
局部表面系列 - 一系列的相关局部表面。
% X) l0 U+ ]1 h/ P. F7 s6 H- @Site Flatness -
: H5 z$ ^  W! H: K* a, K局部平整 -
4 R! I; N  [/ H+ r. aSlip - A defect pattern of small ridges found on the surface of the wafer.
" F5 z/ K8 `  Z2 y划伤 - 晶圆片表面上的小皱造成的缺陷。
Smudge - A defect or contamination found on the wafer caused by fingerprints.
污迹 - 晶圆片上指纹造成的缺陷或污染。
3 \# ^! @8 Z, p8 N- K! SSori -
# y. V: K# `, J. x$ \Striation - Defects or contaminations found in the shape of a helix.
$ p/ V* l4 T0 q/ c条痕 - 螺纹上的缺陷或污染。
4 U) o! P- w; w5 c& d* nSubsite, of a Site - An area found within the site, also rectangular. The center of the subsite must be located within the original site.
局部子表面 - 局部表面内的区域，也是矩形的。子站中心必须位于原始站点内部。
Surface Texture - Variations found on the real surface of the wafer that deviate from the reference surface.
4 C( W- R" `8 c: l: I- L; m) B表面纹理 - 晶圆片实际面与参考面的差异情况。
4 Z& `% N$ E. e  s5 j8 ^Test Wafer - A silicon wafer that is used in manufacturing for monitoring and testing purposes.
测试晶圆片 - 用于生产中监测和测试的晶圆片。
; f# B% `5 f' N; D* g8 LThickness of Top Silicon Film - The distance found between the face of the top silicon film and the surface of the oxide layer.
9 j, I( a8 h; G( D1 ~! X9 h顶部硅膜厚度 - 顶部硅层表面和氧化层表面间的距离。
Top Silicon Film - The layer of silicon on which semiconductor devices are placed. This is located on top of the insulating layer.
+ g2 K5 P7 T; ?5 H! r顶部硅膜 - 生产半导体电路的硅层，位于绝缘层顶部。
Total Indicator Reading (TIR) - The smallest distance between planes on the surface of the wafer.
  K( [2 |* B% C$ c! K总计指示剂数(TIR) - 晶圆片表面位面间的最短距离。
4 \% f9 q. `( k2 JVirgin Test Wafer - A wafer that has not been used in manufacturing or other processes.
原始测试晶圆片 - 还没有用于生产或其他流程中的晶圆片。
Void - The lack of any sort of bond (particularly a chemical bond) at the site of bonding.
无效 - 在应该绑定的地方没有绑定（特别是化学绑定）。
Waves - Curves and contours found on the surface of the wafer that can be seen by the naked eye.
) w, p; j8 S7 [% [+ I波浪 - 晶圆片表面通过肉眼能发现的弯曲和曲线。
/ d3 G. R0 Q  s$ j. y% p4 c3 IWaviness - Widely spaced imperfections on the surface of a wafer.
波纹 - 晶圆片表面经常出现的缺陷。