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Contents
, S& o" e( F! k6 v7 w1. Definition .....................................................................................................................60. |" O* X3 J" \1 M4 z2 p
2. Background .................................................................................................................60
?7 y$ r9 z1 ?. E, `2.1. Nanostructured materials .........................................................................................62. f( D7 X, H0 O3 |& i
2.2. Free standing shapes ..............................................................................................62& X2 m( s) |' a* M j" w$ Y$ D
2.3. Rapid prototyping ....................................................................................................63' k$ n7 T& l' W8 e+ i
3. Advantages and disadvantages of CVD.......................................................................63
) f0 r( ]6 r% f! }1 g9 N( n4. Thin film and coating applications.................................................................................64/ ^- T# v* r, `( F7 y$ \
5. CVD system .................................................................................................................65; J* g) a& e, |3 c5 D
5.1. Chemical vapour precursor supply system ...............................................................66
3 b+ a4 @) j2 W5.2. CVD reactor .............................................................................................................67
/ C M8 R# U2 }1 z6 a: f; x5.3. The effluent gas handling system ..............................................................................67
6 |6 ~- P& t% l6. Process principles and deposition mechanism...............................................................70
3 w: N# q0 Z7 U. k( S$ R! _) y. r0 k7. Chemical precursors and reaction chemistry.................................................................70" q' J0 g; r4 d/ j, _0 Q4 y
8. Thermodynamics, kinetics and mass transport phenomena...........................................729 ?2 B& Y6 }* w* V3 w& P
8.1. Thermodynamics ...................................................................................................... 72
8 e& T% E: L1 G$ Q$ s( V, H7 D5 b4 a8.1.1. Reaction feasibility................................................................................... 72
0 y2 ~5 L/ v! N% U, N8.1.2. CVD phase diagram................................................................................. 75
7 }* B( V$ S7 G: q8.2. Kinetics..................................................................................................................... 76; [$ d# I/ G" E- w
8.3. Mass transport phenomena ...................................................................................... 79! A# T# N. ^6 f& b6 k* Q
8.3.1. Fluid dynamics......................................................................................... 79' Z4 _+ u. B5 U+ X$ }; y
8.4. Mass transport control ............................................................................................. 80
; ?; H7 Z5 k) Y9. CVD process parameters...............................................................................................80' @7 h4 _ m" y9 D$ h
9.1. Coating uniformity ................................................................................................... 81
% _& s; Q, E# K, ?# Z/ O A: ]2 F8 }9.2. Coating–substrate adhesion......................................................................................81. I% A/ B3 C. U$ _ s$ b
9.3. Uniformity of coating composition .......................................................................... 82
# B2 I0 H8 t1 N10. Process monitoring and measurement of the CVD process ..........................................82: M5 w2 q8 k0 L5 o
10.1. Temperature .............................................................................................................88% Z% s# K9 @5 K0 x* P
10.2. Chemical species .......................................................................................................88
B- j6 m, D: C" c1 c. m$ }10.3. Fluid flow ................................................................................................................. 89
' b: S' d+ @- s1 @) m3 n- t1. Process/microstructure/property relationships in CVD ....................................................89( f G' P8 R7 ^# p8 x8 U$ `
11.1. Epitaxial growth .......................................................................................................90
, k M& V1 T+ A" A11.2. Polycrystalline growth ..............................................................................................90
{* q+ H% Z3 R/ k11.3. Whiskers ...................................................................................................................91" D) k& n e3 e1 S
11.4. Amorphous...............................................................................................................91
1 Q: \ l. B( y4 F' b, Q" X12. Variants of CVD methods............................................................................................94) I+ E$ i9 _3 S& L
12.1. Thermally activated chemical vapour deposition .....................................................94+ a/ V0 ?5 P v& o( d i
12.1.1. Semiconductors, dielectric and metallic films for microelectronics,
6 h" [: E4 J9 ], a/ Eoptoelectronics or energy conversion devices........................................... 96
4 r V6 |9 D3 V( |2.1.2. Ceramic protective coatings ...................................................................100. |$ N* y' J) r. O! C& V2 c' m/ R
12.1.3. Diffusion coating....................................................................................103
* c- g% A. S; e3 e D0 {- E' b6 c12.1.4. Optical fibres ..........................................................................................104
2 i4 X0 m/ Y4 s; E7 n12.1.5. Ceramic monofilament fibres .................................................................105! d8 g8 ?, U9 h' H& c% w: S$ T
12.1.6. Fibre coating ..........................................................................................107+ _8 ?& i @8 ^
12.2. Plasma enhanced chemical vapour deposition ..........................................110+ V& c0 A6 B( q( d) h
12.2.1. Process principles ...................................................................................110: p( t8 R) j+ \- m
12.2.2. Disadvantages and advantages of PECVD............................................1113 J1 o W, g" E* s1 ?( o! U4 i5 g
12.2.3. Examples of applications .......................................................................114
; p, i8 J8 k. G12.3. Photo-assisted chemical vapour deposition ..............................................117
5 H! Q9 r; r( m* {4 h12.3.1. Photo-thermal ........................................................................................118! R; `( Y6 D& o- X0 Z3 o* h
12.3.2. Photolytic ...............................................................................................118
' N# d' R& X, c5 I7 q4 p12.3.3. Advantages.............................................................................................119
7 |5 D+ H) h1 P. q: P; p7 L; P12.3.4. Applications ...........................................................................................119# g6 r8 F& K$ c3 E& m
12.4. Atomic layer epitaxy process.................................................................. 121: n r3 K$ p. H* U# j
2.5. Metalorganic chemical vapour deposition.....................................................122
* O. x: Z) v" [6 R& J12.5.1. Definition ...............................................................................................122
* d8 B f2 u% h. z9 J" V12.5.2. Process characteristics and advantages ..................................................124
3 k" p( a5 i: }, i12.5.3. Limitations .............................................................................................125
8 E0 L d; j" q0 `; d9 P" S1 d12.5.4. Applications ...........................................................................................125
! N0 J9 w8 c9 J12.6. Pulsed injection metalorganic chemical vapour deposition ........................125
! j$ n% \! w) L12.6.1. Problems associated with the MOCVD method, especially for the |( m8 g/ H+ Y- |) Y, M
deposition of multicomponent oxides or multilayers ............................. 125) b/ }6 c$ f1 r2 `1 z6 ?
2.6.2. Solutions to the problems using single source and special precursor
9 {. r8 L0 L! q& w: Ninjection methods ................................................................................... 126
! v& _! O' ]1 F5 c2.6.3. Pulsed injection MOCVD ......................................................................1261 d* T9 y& k$ M) P8 i% s4 {4 R0 }
12.7. Aerosol assisted chemical vapour deposition .............................................128
' t8 i6 i& q, l% ^" o( a; j12.7.1. Pyrosol ...................................................................................................131* \: M" E1 A& t6 C3 S
12.7.2. Electrostatic assisted vapour deposition.................................................133
1 D* r+ U/ Z6 g. ?12.8. Flame assisted chemical vapour deposition................................................140
5 [ r4 g4 Q" t$ X( ~# i( T12.8.1. Flame-assisted vapour deposition ..........................................................142
5 D2 G( X. I( {+ q12.8.2. Combustion chemical vapour deposition ...............................................143
8 ?& O2 H- k% Q7 s12.9. Electrochemical vapour deposition............................................................144
: d3 n! i% _3 G/ Z* @" P12.9.1. Process principle.....................................................................................145
+ \- @0 s( L! J12.9.2. Kinetics and growth...............................................................................146% M0 L* R# f; S' F4 ]' d
12.9.3. Comparison of CVD and EVD processes..............................................147* z5 p: w! P- A# m) M
12.9.4. Advantages.............................................................................................148* Y# P; D/ M2 Q0 f
12.9.5. Technological status...............................................................................148
1 E$ `$ Y0 D8 y* k# W12.9.6. Other variants ........................................................................................149
1 p& w2 g0 F- s% R9 K6 i12.10. Chemical vapour infiltration ..................................................................149
0 }. b5 a7 W! {( c12.10.1. Applications ...........................................................................................150
+ Z; ^7 O, z. s g( s) X. \6 {12.10.2. Methodology..........................................................................................151
3 X+ i4 x" l9 h* H9 B12.10.3. Various CVI processes ...........................................................................153
5 e- S5 |3 t$ @# X; }/ e. _13.Comparison of various CVD methods.................................................................156
, h' {: P" @* v% a- V4 B9 a14.Comparison of CVD with other coating techniques ...........................................157* d- g% F! t d; L! `* S4 k
15. Conclusions and outlook ..................................................................................159
; w2 k- p: z7 O& U( P& VAcknowledgements....................................................................................................160
- b! a" V. h9 }7 h, g8 IReferences ..............................................................................................................160 |
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