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[书籍] 《Chemical vapour deposition of coatings》英文原版

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发表于 2008-12-23 16:01:15 | 显示全部楼层 |阅读模式

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Contents' j9 k, V8 D- D6 O
1. Definition .....................................................................................................................60
7 h1 s% N' h: F6 t8 j% f1 m2 c2. Background .................................................................................................................60
  f. D: o& r- F! t: I0 o+ _" |2.1. Nanostructured materials .........................................................................................623 D1 q. ]4 d  O' ^7 Q0 [) I
2.2. Free standing shapes ..............................................................................................62
# G( e& H) F; F5 Y4 p2.3. Rapid prototyping ....................................................................................................63/ S- ~, @, e& z  y; N8 C9 I
3. Advantages and disadvantages of CVD.......................................................................63
7 i+ a5 p9 S; p4. Thin film and coating applications.................................................................................648 s4 I& k( F) c( Y6 O
5. CVD system .................................................................................................................653 `$ X, @' c- b1 m, ]$ h
5.1. Chemical vapour precursor supply system ...............................................................66
) x4 H$ g: g% i- y/ d0 O6 r; @5.2. CVD reactor .............................................................................................................673 ?& z) Z* X' C0 i
5.3. The effluent gas handling system ..............................................................................67$ b8 q& A4 s$ @9 |
6. Process principles and deposition mechanism...............................................................70
6 R8 E# o5 F" H$ E7. Chemical precursors and reaction chemistry.................................................................70
% t+ ]+ z6 v$ }4 I2 C8. Thermodynamics, kinetics and mass transport phenomena...........................................72  v) X, Y/ ?$ L& m, _) Y1 V6 o
8.1. Thermodynamics ......................................................................................................   72
4 m# A1 o" U2 |% {8.1.1. Reaction feasibility...................................................................................                 727 f2 C& o' `5 ^+ x7 V4 A) G" [* U
8.1.2. CVD phase diagram.................................................................................                 75! k( R. ?; c# p4 U
8.2. Kinetics..................................................................................................................... 76
) w# T1 u2 P6 J" }1 A/ i# T5 f' |0 ?8.3. Mass transport phenomena ...................................................................................... 79& H/ ?- X: B$ v9 S' P6 v
8.3.1. Fluid dynamics.........................................................................................                79* H! n4 C' I+ u: w+ e/ A6 M% E& r* X
8.4. Mass transport control .............................................................................................   80
, U. P" o6 b: f5 d. Z9. CVD process parameters...............................................................................................80! ^; r2 V; i: V0 \
9.1. Coating uniformity ...................................................................................................   81
. q9 _( X* f  `- d: |3 r9.2. Coating–substrate adhesion......................................................................................81
$ d. _9 s- g; J; u$ f4 ]+ R# x9.3. Uniformity of coating composition ..........................................................................      822 G: }4 C; k! d! g8 G
10. Process monitoring and measurement of the CVD process ..........................................82* ?, [. w; n, u* ?) Z5 ]
10.1. Temperature .............................................................................................................882 T, T7 G  j2 R9 _* t3 |8 _
10.2. Chemical species .......................................................................................................88
9 F1 l9 U4 B/ I0 ~6 w10.3. Fluid flow .................................................................................................................    89
3 H& O( K! {$ o$ p) |# f: Q1. Process/microstructure/property relationships in CVD ....................................................899 O  D8 S$ l& y. A0 E9 h" }8 \& [
11.1. Epitaxial growth .......................................................................................................90
& \; N  s+ y7 v/ s: j! N/ P8 y11.2. Polycrystalline growth ..............................................................................................906 P# ]: e+ y$ b4 A* l
11.3. Whiskers ...................................................................................................................919 j2 j1 ^* T& Q9 q3 o/ A, J3 r" u* z
11.4. Amorphous...............................................................................................................91
* g4 L# \3 P  p* ~* W12. Variants of CVD methods............................................................................................945 }: O6 ]( T. m0 F
12.1. Thermally activated chemical vapour deposition .....................................................94
. F1 T4 r& p  v: n) g. C4 V12.1.1. Semiconductors, dielectric and metallic films for microelectronics,
0 Z) Y. P& @' y/ d& m: L+ j/ Q9 }optoelectronics or energy conversion devices...........................................          96. g3 x7 h+ E3 W2 `
2.1.2. Ceramic protective coatings ...................................................................1008 R! L( a6 B( R' p+ l, a7 G) ~
12.1.3. Diffusion coating....................................................................................1035 X- O* U5 j7 V5 F; Y
12.1.4. Optical fibres ..........................................................................................104
4 t/ n/ x3 U" ~6 m12.1.5. Ceramic monofilament fibres .................................................................105& }# S8 L: M7 `
12.1.6. Fibre coating ..........................................................................................107/ `3 k' w* x' C  f& r4 g, Z/ _1 y$ ]1 d
12.2. Plasma enhanced chemical vapour deposition ..........................................110
  n4 P2 m" o2 u: [/ @, a! [12.2.1. Process principles ...................................................................................110
4 K+ _2 p6 P2 s( X" o4 {1 J3 [+ ?12.2.2. Disadvantages and advantages of PECVD............................................111% T- ]9 m* }/ ?- o- T# ^
12.2.3. Examples of applications .......................................................................1149 S' k  \' L  a+ _5 ~( O2 r
12.3. Photo-assisted chemical vapour deposition ..............................................117
7 ~9 p! p1 T9 p+ G7 L12.3.1. Photo-thermal ........................................................................................118
: c" i) q* S1 X9 {12.3.2. Photolytic ...............................................................................................118
) @3 ]; H$ H/ B12.3.3. Advantages.............................................................................................119
2 p0 P  A% i; ~) R) t) N5 t12.3.4. Applications ...........................................................................................119% ~% B$ F  b# F5 f) I8 W( D
12.4. Atomic layer epitaxy process..................................................................     121
8 }3 o. b5 F- \  }2.5. Metalorganic chemical vapour deposition.....................................................122
- D" {9 x  O* ^5 `12.5.1. Definition ...............................................................................................122- S7 n' H5 v; o/ d1 H9 E& i
12.5.2. Process characteristics and advantages ..................................................124
: F% z1 }0 R4 E* @9 n4 W! d12.5.3. Limitations .............................................................................................1259 X4 a, d: m2 d1 Q+ k6 a1 ?# h
12.5.4. Applications ...........................................................................................125* F( ^# a. a1 I1 e8 a/ a3 k
12.6. Pulsed injection metalorganic chemical vapour deposition ........................1253 |5 l: k) t. H6 \- O. e
12.6.1. Problems associated with the MOCVD method, especially for the
" Y# f+ }7 H0 J* V. w) Q; J+ sdeposition of multicomponent oxides or multilayers .............................                 125
3 ?/ N8 T; ?! H, K2.6.2. Solutions to the problems using single source and special precursor
9 J/ W7 A0 p/ zinjection methods ...................................................................................           1262 z0 v) B$ B& z1 T* T6 |0 Q
2.6.3. Pulsed injection MOCVD ......................................................................1263 }7 Y8 |' q, o. A% m  p# P6 N9 r
12.7. Aerosol assisted chemical vapour deposition .............................................1285 w8 ?; D7 l  j7 ~( P/ ]
12.7.1. Pyrosol ...................................................................................................131
- `2 W1 t) P6 G9 |5 Y" H12.7.2. Electrostatic assisted vapour deposition.................................................133
# z, K& L& B) K  M+ S0 G% i12.8. Flame assisted chemical vapour deposition................................................140
" k0 C7 h# T8 s  l8 F12.8.1. Flame-assisted vapour deposition ..........................................................1428 ?+ K6 W% P. ]% O& u- U
12.8.2. Combustion chemical vapour deposition ...............................................143' o8 ^2 r& }  G+ U. ^1 d! ]! t  W
12.9. Electrochemical vapour deposition............................................................144( _9 d: N2 z3 K7 {& z9 P
12.9.1. Process principle.....................................................................................145
* k$ C0 K+ x- p) V% l5 ]12.9.2. Kinetics and growth...............................................................................146
0 J* [5 j3 Q9 |0 V, s" g# }- y6 f12.9.3. Comparison of CVD and EVD processes..............................................147% o# P) {6 F" X9 S' b
12.9.4. Advantages.............................................................................................148
; D* l% M. z- A4 ?; D4 y2 `12.9.5. Technological status...............................................................................148! B, @+ m" E3 Z1 J
12.9.6. Other variants ........................................................................................149
2 v% f9 t) A1 F8 p6 K3 U12.10. Chemical vapour infiltration ..................................................................149
$ F9 u9 O' J- F$ g0 v% {12.10.1. Applications ...........................................................................................1502 a% _' |" x4 D% {: d% p
12.10.2. Methodology..........................................................................................151
5 W4 f/ f, i" \. |. q% a; K4 n& A12.10.3. Various CVI processes ...........................................................................153
, q" D1 x: n8 C13.Comparison of various CVD methods.................................................................156# C: |# ]8 ~4 a8 v
14.Comparison of CVD with other coating techniques ...........................................1572 U; F, P$ l/ C  a8 P! E* L
15. Conclusions and outlook ..................................................................................1598 E3 X, {3 v' ]
Acknowledgements....................................................................................................1604 M3 g2 h8 T1 p: r% \( F6 B. g
References ..............................................................................................................160

Chemical vapour deposition of coatings.rar

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