硅片行业术语大全(中英文对照 A-H)

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硅片行业术语大全(中英文对照 A-H)
' }3 b( _1 \0 @$ H- D
Acceptor - An element, such as boron, indium, and gallium used to create a free hole in a semiconductor. The acceptor atoms are required to have one less valence electron than the semiconductor.
受主 -  一种用来在半导体中形成空穴的元素，比如硼、铟和镓。受主原子必须比半导体元素少一价电子
Alignment Precision - Displacement of patterns that occurs during the photolithography process.
套准精度 - 在光刻工艺中转移图形的精度。
Anisotropic - A process of etching that has very little or no undercutting
, Q; H7 w5 t6 q# H) ?. P9 S各向异性 - 在蚀刻过程中，只做少量或不做侧向凹刻。
Area Contamination - Any foreign particles or material that are found on the surface of a wafer. This is viewed as discolored or smudged, and it is the result of stains, fingerprints, water spots, etc.
沾污区域 - 任何在晶圆片表面的外来粒子或物质。由沾污、手印和水滴产生的污染。
0 U& _5 n3 R' _4 J1 jAzimuth, in Ellipsometry - The angle measured between the plane of incidence and the major axis of the ellipse.
9 Q; ?+ v5 o4 J4 P/ C% S" ^4 ]0 z1 s椭圆方位角 - 测量入射面和主晶轴之间的角度。
6 {% y1 l1 U! LBackside - The bottom surface of a silicon wafer. (Note: This term is not preferred; instead, use ‘back surface’.)
4 o: d  ~% [' S! g' f背面 - 晶圆片的底部表面。（注：不推荐该术语，建议使用“背部表面”）
8 [  W$ T, X4 D& S; @& G# |, ZBase Silicon Layer - The silicon wafer that is located underneath the insulator layer, which supports the silicon film on top of the wafer.
# c# T' S/ w9 p; u5 \底部硅层 - 在绝缘层下部的晶圆片，是顶部硅层的基础。
3 A$ |* T8 u! P  hBipolar - Transistors that are able to use both holes and electrons as charge carriers.
双极晶体管 - 能够采用空穴和电子传导电荷的晶体管。
' V8 V& }8 s9 e( PBonded Wafers - Two silicon wafers that have been bonded together by silicon dioxide, which acts as an insulating layer.
, h6 ?: p1 I  U- M1 G绑定晶圆片 - 两个晶圆片通过二氧化硅层结合到一起，作为绝缘层。
! r. D; g8 I* y, K/ E/ I* wBonding Interface - The area where the bonding of two wafers occurs.
绑定面 - 两个晶圆片结合的接触区。
& o( X" b% G# S" A# E& mBuried Layer - A path of low resistance for a current moving in a device. Many of these dopants are antimony and arsenic.
埋层 - 为了电路电流流动而形成的低电阻路径，搀杂剂是锑和砷。
  b+ Q. A4 \# v3 `" s2 D; \# oBuried Oxide Layer (BOX) - The layer that insulates between the two wafers.
7 @4 a  T1 ]' Z" J' F氧化埋层(BOX) - 在两个晶圆片间的绝缘层。
+ }5 j& P4 R  V- R3 u, ~5 k, B" iCarrier - Valence holes and conduction electrons that are capable of carrying a charge through a solid surface in a silicon wafer.
, t& l' m9 b0 t( l载流子 - 晶圆片中用来传导电流的空穴或电子。
5 A- u0 X9 e: {3 y* }; ZChemical-Mechanical Polish (CMP) - A process of flattening and polishing wafers that utilizes both chemical removal and mechanical buffing. It is used during the fabrication process.
! @* b8 b! \* t( R( t. ~1 l化学-机械抛光(CMP) - 平整和抛光晶圆片的工艺，采用化学移除和机械抛光两种方式。此工艺在前道工艺中使用。
+ m- i) J( _7 A5 U6 y/ S$ uChuck Mark - A mark found on either surface of a wafer, caused by either a robotic end effector, a chuck, or a wand.
卡盘痕迹 - 在晶圆片任意表面发现的由机械手、卡盘或托盘造成的痕迹。
# ]/ C; q9 ?# C: ]Cleavage Plane - A fracture plane that is preferred.
解理面 - 破裂面
0 }. i% {& X  h2 y7 T- LCrack - A mark found on a wafer that is greater than 0.25 mm in length.
, D3 s* G; ]" [& k; U裂纹 - 长度大于0.25毫米的晶圆片表面微痕。
7 Y; f' x2 z' d: B( h  ]Crater - Visible under diffused illumination, a surface imperfection on a wafer that can be distinguished individually.
3 J6 L5 I2 U8 F2 y! V4 x微坑 - 在扩散照明下可见的，晶圆片表面可区分的缺陷。
Conductivity (electrical) - A measurement of how easily charge carriers can flow throughout a material.
; o* w8 ?1 a. k1 B/ Q& y传导性（电学方面） - 一种关于载流子通过物质难易度的测量指标 。
! |! N9 b. C, P, I( KConductivity Type - The type of charge carriers in a wafer, such as “N-type” and “P-type”.
导电类型 - 晶圆片中载流子的类型，N型和P型。
Contaminant, Particulate (see light point defect)
8 N0 C1 q6 a% f污染微粒 （参见光点缺陷）
/ {, v* W! U) K* n  GContamination Area - An area that contains particles that can negatively affect the characteristics of a silicon wafer.
沾污区域 - 部分晶圆片区域被颗粒沾污，造成不利特性影响。
Contamination Particulate - Particles found on the surface of a silicon wafer.
* C. P& X7 H  }9 x沾污颗粒 - 晶圆片表面上的颗粒。
0 R; d0 ~+ x9 ACrystal Defect - Parts of the crystal that contain vacancies and dislocations that can have an impact on a circuit’s electrical performance.
晶体缺陷 - 部分晶体包含的、会影响电路性能的空隙和层错。
Crystal Indices (see Miller indices)
4 g, O% H. G" `/ `晶体指数 （参见米勒指数）
) |, Q( l3 e5 j3 T1 @8 Z- P) Y! ]7 u& ~Depletion Layer - A region on a wafer that contains an electrical field that sweeps out charge carriers.
耗尽层 - 晶圆片上的电场区域，此区域排除载流子。
Dimple - A concave depression found on the surface of a wafer that is visible to the eye under the correct lighting conditions.
6 n" I6 i$ X2 S4 D- t) I: p6 a. x+ t9 C表面起伏 - 在合适的光线下通过肉眼可以发现的晶圆片表面凹陷。
1 D" i- b2 L1 ODonor - A contaminate that has donated extra “free” electrons, thus making a wafer “N-Type”.
6 ~. A5 X% T# k- }" Y施主 - 可提供“自由”电子的搀杂物，使晶圆片呈现为N型。
Dopant - An element that contributes an electron or a hole to the conduction process, thus altering the conductivity. Dopants for silicon wafers are found in Groups III and V of the Periodic Table of the Elements.
9 S2 D& z& ]! x* a' K搀杂剂 - 可以为传导过程提供电子或空穴的元素，此元素可以改变传导特性。晶圆片搀杂 剂可以在元素周期表的III 和 V族元素中发现。
Doping - The process of the donation of an electron or hole to the conduction process by a dopant.
) a2 [% c( C- b( o8 ~掺杂 - 把搀杂剂掺入半导体，通常通过扩散或离子注入工艺实现。
Edge Chip and Indent - An edge imperfection that is greater than 0.25 mm.
芯片边缘和缩进 - 晶片中不完整的边缘部分超过0.25毫米。
! z1 d. B( w6 Q) fEdge Exclusion Area - The area located between the fixed quality area and the periphery of a wafer. (This varies according to the dimensions of the wafer.)
边缘排除区域 - 位于质量保证区和晶圆片外围之间的区域。（根据晶圆片的尺寸不同而有所不同。）
Edge Exclusion, Nominal (EE) - The distance between the fixed quality area and the periphery of a wafer.
; F8 o- w. i; a5 I5 L名义上边缘排除(EE) - 质量保证区和晶圆片外围之间的距离
Edge Profile - The edges of two bonded wafers that have been shaped either chemically or mechanically.
9 U( A. n! f( {( g2 Z边缘轮廓 - 通过化学或机械方法连接起来的两个晶圆片边缘。
; ?) W9 j1 f5 y0 Z; E1 ~Etch - A process of chemical reactions or physical removal to rid the wafer of excess materials.
蚀刻 - 通过化学反应或物理方法去除晶圆片的多余物质。
; r: i4 I/ W. P6 C4 S+ W7 v- JFixed Quality Area (FQA) - The area that is most central on a wafer surface.
" S1 h, A) C& l4 V+ s! m质量保证区(FQA) - 晶圆片表面中央的大部分。
Flat - A section of the perimeter of a wafer that has been removed for wafer orientation purposes.
平边 - 晶圆片圆周上的一个小平面，作为晶向定位的依据。
Flat Diameter - The measurement from the center of the flat through the center of the wafer to the opposite edge of the wafer. (Perpendicular to the flat)
  G3 D& W; q" L1 l2 [. M: C平口直径 - 由小平面的中心通过晶圆片中心到对面边缘的直线距离。
! n/ w5 G5 s, l+ A, eFour-Point Probe - Test equipment used to test resistivity of wafers.
) R1 ?9 D$ d+ O, B, D四探针 - 测量半导体晶片表面电阻的设备。
: H1 U3 M8 ]% G, j  S( I  oFurnace and Thermal Processes - Equipment with a temperature gauge used for processing wafers. A constant temperature is required for the process.
炉管和热处理 - 温度测量的工艺设备，具有恒定的处理温度。
Front Side - The top side of a silicon wafer. (This term is not preferred; use front surface instead.)
( s4 A5 m& u7 H正面 - 晶圆片的顶部表面（此术语不推荐，建议使用“前部表面”）。
# o3 }' `7 Z& j; Y( t3 w" I5 IGoniometer - An instrument used in measuring angles.
' Z5 F, s. o. P/ m3 t3 C4 _& ^角度计 - 用来测量角度的设备。
, I4 z( o1 |7 h; m0 U7 Y3 k+ fGradient, Resistivity (not preferred; see resistivity variation)
电阻梯度 （不推荐使用，参见“电阻变化”）
Groove - A scratch that was not completely polished out.
凹槽 - 没有被完全清除的擦伤。
0 C- x( ]! E; w& C% I# m: V( t" `Hand Scribe Mark - A marking that is hand scratched onto the back surface of a wafer for identification purposes.
  x* b; h# ?0 i; c: s& ?手工印记 - 为区分不同的晶圆片而手工在背面做出的标记。
Haze - A mass concentration of surface imperfections, often giving a hazy appearance to the wafer.
7 K& ?7 G+ J" }, ?7 k2 L9 s雾度 - 晶圆片表面大量的缺陷，常常表现为晶圆片表面呈雾状。
Hole - Similar to a positive charge, this is caused by the absence of a valence electron.
空穴 - 和正电荷类似，是由缺少价电子引起的。
硅片行业术语大全(中英文对照 I-Z)

6 H& s/ a! N9 u) R# Z7 ]Ingot - A cylindrical solid made of polycrystalline or single crystal silicon from which wafers are cut.
晶锭 - 由多晶或单晶形成的圆柱体，晶圆片由此切割而成。
2 ^' |! o# l8 O  X+ q3 w6 DLaser Light-Scattering Event - A signal pulse that locates surface imperfections on a wafer.
激光散射 - 由晶圆片表面缺陷引起的脉冲信号。
/ j3 |% G1 T8 m# ~Lay - The main direction of surface texture on a wafer.
层 - 晶圆片表面结构的主要方向。
' \- s. s3 F( x0 aLight Point Defect (LPD) (Not preferred; see localized light-scatterer)
( k" }- U2 |) v7 i1 V/ \光点缺陷(LPD) （不推荐使用，参见“局部光散射”）
Lithography - The process used to transfer patterns onto wafers.
& y" |: g/ h2 s  {9 |光刻 - 从掩膜到圆片转移的过程。
Localized Light-Scatterer - One feature on the surface of a wafer, such as a pit or a scratch that scatters light. It is also called a light point defect.
局部光散射 - 晶圆片表面特征，例如小坑或擦伤导致光线散射，也称为光点缺陷。
Lot - Wafers of similar sizes and characteristics placed together in a shipment.
  M. z" {( [! D批次 - 具有相似尺寸和特性的晶圆片一并放置在一个载片器内。
Majority Carrier - A carrier, either a hole or an electron that is dominant in a specific region, such as electrons in an N-Type area.
/ R1 f. R: Z- ^, k多数载流子 - 一种载流子，在半导体材料中起支配作用的空穴或电子，例如在N型中是电子。
Mechanical Test Wafer - A silicon wafer used for testing purposes.
/ ?) z- O, }  W* M  R% d机械测试晶圆片 - 用于测试的晶圆片。
4 b' O2 L& q: A. Z! kMicroroughness - Surface roughness with spacing between the impurities with a measurement of less than 100 μm.
- b; E' C* |/ N4 q7 \9 e微粗糙 - 小于100微米的表面粗糙部分。
+ d8 d7 b/ m& d0 U. P  sMiller Indices, of a Crystallographic Plane - A system that utilizes three numbers to identify plan orientation in a crystal.
Miller索指数 - 三个整数，用于确定某个并行面。这些整数是来自相同系统的基本向量。
, E' Z" n) d9 p' S5 y9 DMinimal Conditions or Dimensions - The allowable conditions for determining whether or not a wafer is considered acceptable.
) I* O# M: B: X最小条件或方向 - 确定晶圆片是否合格的允许条件。
Minority Carrier - A carrier, either a hole or an electron that is not dominant in a specific region, such as electrons in a P-Type area.
, `- J% L1 r3 A6 L" N, @少数载流子 - 在半导体材料中不起支配作用的移动电荷，在P型中是电子，在N型中是空穴。
Mound - A raised defect on the surface of a wafer measuring more than 0.25 mm.
3 O4 Y0 b; ?; s堆垛 - 晶圆片表面超过0.25毫米的缺陷。
Notch - An indent on the edge of a wafer used for orientation purposes.
凹槽 - 晶圆片边缘上用于晶向定位的小凹槽。
4 O  i1 c2 f! ?; M1 gOrange Peel - A roughened surface that is visible to the unaided eye.
桔皮 - 可以用肉眼看到的粗糙表面
Orthogonal Misorientation -
直角定向误差 -
( O. P8 G6 R. @% ~Particle - A small piece of material found on a wafer that is not connected with it.
- z8 _$ L- B' A- O颗粒 - 晶圆片上的细小物质。
Particle Counting - Wafers that are used to test tools for particle contamination.
" N+ N# j7 [. w' i颗粒计算 - 用来测试晶圆片颗粒污染的测试工具。
Particulate Contamination - Particles found on the surface of a wafer. They appear as bright points when a collineated light is shined on the wafer.
: ^1 ^3 n5 f, y+ ^6 ]颗粒污染 - 晶圆片表面的颗粒。
2 i6 J% Z3 K& F9 s; X2 E; a+ vPit - A non-removable imperfection found on the surface of a wafer.
: L: B$ b- n) f& B$ p! O! {" ~) G  |/ p深坑 - 一种晶圆片表面无法消除的缺陷。
( C# ], t/ w# Y' xPoint Defect - A crystal defect that is an impurity, such as a lattice vacancy or an interstitial atom.
点缺陷 - 不纯净的晶缺陷，例如格子空缺或原子空隙。
2 q! @4 O0 _" U. Q0 l6 v; JPreferential Etch -
5 t" m" A9 B. e4 X优先蚀刻 -
" I* L4 s5 [3 @$ ]% ]$ K) WPremium Wafer - A wafer that can be used for particle counting, measuring pattern resolution in the photolithography process, and metal contamination monitoring. This wafer has very strict specifications for a specific usage, but looser specifications than the prime wafer.
- H/ C) b; X- j, z9 z9 L' Q测试晶圆片 - 影印过程中用于颗粒计算、测量溶解度和检测金属污染的晶圆片。对于具体应用该晶圆片有严格的要求，但是要比主晶圆片要求宽松些。
Primary Orientation Flat - The longest flat found on the wafer.
- ]/ m5 v  ]. {+ v' Q4 d  e主定位边 - 晶圆片上最长的定位边。
+ t/ |0 u: G7 o8 J( h1 WProcess Test Wafer - A wafer that can be used for processes as well as area cleanliness.
& l$ @+ @4 j8 v加工测试晶圆片 - 用于区域清洁过程中的晶圆片。
9 R7 O  j% D3 M- \2 Q1 T; M0 wProfilometer - A tool that is used for measuring surface topography.
表面形貌剂 - 一种用来测量晶圆片表面形貌的工具。
  W) ^+ K2 R' y5 [5 Y; FResistivity (Electrical) - The amount of difficulty that charged carriers have in moving throughout material.
9 u' ]. E$ O' A0 h电阻率（电学方面） - 材料反抗或对抗电荷在其中通过的一种物理特性。
Required - The minimum specifications needed by the customer when ordering wafers.
$ @/ w6 a, l3 S; n4 r* w* E: M必需 - 订购晶圆片时客户必须达到的最小规格。
Roughness - The texture found on the surface of the wafer that is spaced very closely together.
粗糙度 - 晶圆片表面间隙很小的纹理。
Saw Marks - Surface irregularities
- n# K* ^$ ~! Q; }: ~7 y5 m4 ?锯痕 - 表面不规则。
; P2 ?: e$ P  F* U  c" y( jScan Direction - In the flatness calculation, the direction of the subsites.
0 R1 @- e& \- j2 E扫描方向 - 平整度测量中，局部平面的方向。
Scanner Site Flatness -
局部平整度扫描仪 -
Scratch - A mark that is found on the wafer surface.
- S9 }# ~! ^: c! Z2 h" e8 z擦伤 - 晶圆片表面的痕迹。
Secondary Flat - A flat that is smaller than the primary orientation flat. The position of this flat determines what type the wafer is, and also the orientation of the wafer.
8 B& s8 E1 p& t8 W! }8 v第二定位边 - 比主定位边小的定位边，它的位置决定了晶圆片的类型和晶向。
Shape -
: t0 V1 ^! A3 P形状 -
Site - An area on the front surface of the wafer that has sides parallel and perpendicular to the primary orientation flat. (This area is rectangular in shape)
局部表面 - 晶圆片前面上平行或垂直于主定位边方向的区域。
& H1 `1 g" ?( r9 {Site Array - a neighboring set of sites
局部表面系列 - 一系列的相关局部表面。
Site Flatness -
局部平整 -
5 W7 q! N) t: h* H9 I$ vSlip - A defect pattern of small ridges found on the surface of the wafer.
划伤 - 晶圆片表面上的小皱造成的缺陷。
  v% O4 o6 N) }# p: i3 R, Z$ m" q" _Smudge - A defect or contamination found on the wafer caused by fingerprints.
污迹 - 晶圆片上指纹造成的缺陷或污染。
Sori -
Striation - Defects or contaminations found in the shape of a helix.
7 O" [: o, C* ]. W3 B/ I# z% I3 v: s条痕 - 螺纹上的缺陷或污染。
0 I+ f6 @3 Q6 K% @% H8 @- r' M% i5 |Subsite, of a Site - An area found within the site, also rectangular. The center of the subsite must be located within the original site.
局部子表面 - 局部表面内的区域，也是矩形的。子站中心必须位于原始站点内部。
) o  U' r& L5 a# r" a9 vSurface Texture - Variations found on the real surface of the wafer that deviate from the reference surface.
表面纹理 - 晶圆片实际面与参考面的差异情况。
Test Wafer - A silicon wafer that is used in manufacturing for monitoring and testing purposes.
" G8 ?/ Z/ F6 k" ?测试晶圆片 - 用于生产中监测和测试的晶圆片。
Thickness of Top Silicon Film - The distance found between the face of the top silicon film and the surface of the oxide layer.
; u& z7 Z0 b# {  _. r顶部硅膜厚度 - 顶部硅层表面和氧化层表面间的距离。
* k6 s& D7 H: g) e% gTop Silicon Film - The layer of silicon on which semiconductor devices are placed. This is located on top of the insulating layer.
顶部硅膜 - 生产半导体电路的硅层，位于绝缘层顶部。
% ]! p1 J, O6 {/ l5 ZTotal Indicator Reading (TIR) - The smallest distance between planes on the surface of the wafer.
8 x7 e" R1 u* t0 J" V, U: C4 G$ N总计指示剂数(TIR) - 晶圆片表面位面间的最短距离。
Virgin Test Wafer - A wafer that has not been used in manufacturing or other processes.
原始测试晶圆片 - 还没有用于生产或其他流程中的晶圆片。
6 y# ^- I1 R% ?- Z6 XVoid - The lack of any sort of bond (particularly a chemical bond) at the site of bonding.
( O* h  d7 E5 `6 g. [4 M6 r2 p无效 - 在应该绑定的地方没有绑定（特别是化学绑定）。
Waves - Curves and contours found on the surface of the wafer that can be seen by the naked eye.
波浪 - 晶圆片表面通过肉眼能发现的弯曲和曲线。
; Y# y$ {$ k( W$ pWaviness - Widely spaced imperfections on the surface of a wafer.
1 ]9 r3 y) R0 }* e波纹 - 晶圆片表面经常出现的缺陷。