硅片行业术语大全(中英文对照 A-H)

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硅片行业术语大全(中英文对照 A-H)

Acceptor - An element, such as boron, indium, and gallium used to create a free hole in a semiconductor. The acceptor atoms are required to have one less valence electron than the semiconductor.
受主 -  一种用来在半导体中形成空穴的元素，比如硼、铟和镓。受主原子必须比半导体元素少一价电子
Alignment Precision - Displacement of patterns that occurs during the photolithography process.
0 T+ f2 c/ g! A套准精度 - 在光刻工艺中转移图形的精度。
Anisotropic - A process of etching that has very little or no undercutting
* c8 K% D5 M! F- I4 a/ G% L各向异性 - 在蚀刻过程中，只做少量或不做侧向凹刻。
8 d  C  S# O3 d0 Y: OArea Contamination - Any foreign particles or material that are found on the surface of a wafer. This is viewed as discolored or smudged, and it is the result of stains, fingerprints, water spots, etc.
沾污区域 - 任何在晶圆片表面的外来粒子或物质。由沾污、手印和水滴产生的污染。
Azimuth, in Ellipsometry - The angle measured between the plane of incidence and the major axis of the ellipse.
& I2 \: k4 E2 g2 B' Y椭圆方位角 - 测量入射面和主晶轴之间的角度。
Backside - The bottom surface of a silicon wafer. (Note: This term is not preferred; instead, use ‘back surface’.)
背面 - 晶圆片的底部表面。（注：不推荐该术语，建议使用“背部表面”）
) F- e5 w2 y+ k* x  }3 V8 e; W$ u  w2 [Base Silicon Layer - The silicon wafer that is located underneath the insulator layer, which supports the silicon film on top of the wafer.
* B1 M1 @- v% g& J' k8 f! \: ~底部硅层 - 在绝缘层下部的晶圆片，是顶部硅层的基础。
$ k* z0 Z0 }( F) S" H- uBipolar - Transistors that are able to use both holes and electrons as charge carriers.
1 Y) F& ]8 T/ g. s" ~# @5 B9 k  u2 A双极晶体管 - 能够采用空穴和电子传导电荷的晶体管。
Bonded Wafers - Two silicon wafers that have been bonded together by silicon dioxide, which acts as an insulating layer.
绑定晶圆片 - 两个晶圆片通过二氧化硅层结合到一起，作为绝缘层。
0 |2 J5 ]7 i. k2 t8 fBonding Interface - The area where the bonding of two wafers occurs.
( s2 R0 o5 R3 T. x1 \; c绑定面 - 两个晶圆片结合的接触区。
! t# G* r: r; t$ Y/ E; l3 l( x: RBuried Layer - A path of low resistance for a current moving in a device. Many of these dopants are antimony and arsenic.
: K9 q( j8 v' O' I/ Q埋层 - 为了电路电流流动而形成的低电阻路径，搀杂剂是锑和砷。
# b. q5 ~: d8 Z$ |. x; BBuried Oxide Layer (BOX) - The layer that insulates between the two wafers.
氧化埋层(BOX) - 在两个晶圆片间的绝缘层。
6 Y' V# n) ?' e7 U9 ACarrier - Valence holes and conduction electrons that are capable of carrying a charge through a solid surface in a silicon wafer.
& x, O; q7 Q+ [7 z0 B载流子 - 晶圆片中用来传导电流的空穴或电子。
Chemical-Mechanical Polish (CMP) - A process of flattening and polishing wafers that utilizes both chemical removal and mechanical buffing. It is used during the fabrication process.
& A  z( @5 a- f6 i' A9 }& a; f化学-机械抛光(CMP) - 平整和抛光晶圆片的工艺，采用化学移除和机械抛光两种方式。此工艺在前道工艺中使用。
Chuck Mark - A mark found on either surface of a wafer, caused by either a robotic end effector, a chuck, or a wand.
卡盘痕迹 - 在晶圆片任意表面发现的由机械手、卡盘或托盘造成的痕迹。
4 v/ Z2 t7 m7 [' @2 o5 pCleavage Plane - A fracture plane that is preferred.
解理面 - 破裂面
0 K0 P/ _5 X+ nCrack - A mark found on a wafer that is greater than 0.25 mm in length.
& U$ y% [9 S5 ~2 t裂纹 - 长度大于0.25毫米的晶圆片表面微痕。
Crater - Visible under diffused illumination, a surface imperfection on a wafer that can be distinguished individually.
微坑 - 在扩散照明下可见的，晶圆片表面可区分的缺陷。
Conductivity (electrical) - A measurement of how easily charge carriers can flow throughout a material.
传导性（电学方面） - 一种关于载流子通过物质难易度的测量指标 。
  W" g; s. V/ s6 f4 ?3 G9 e) I* `3 MConductivity Type - The type of charge carriers in a wafer, such as “N-type” and “P-type”.
导电类型 - 晶圆片中载流子的类型，N型和P型。
( e' U5 k7 P: I; A5 aContaminant, Particulate (see light point defect)
污染微粒 （参见光点缺陷）
Contamination Area - An area that contains particles that can negatively affect the characteristics of a silicon wafer.
3 n6 `& B4 j, |$ d6 D沾污区域 - 部分晶圆片区域被颗粒沾污，造成不利特性影响。
Contamination Particulate - Particles found on the surface of a silicon wafer.
& Q3 T& g' N# V沾污颗粒 - 晶圆片表面上的颗粒。
Crystal Defect - Parts of the crystal that contain vacancies and dislocations that can have an impact on a circuit’s electrical performance.
/ q# S- Y" N' k* ?4 H3 Q" X- k晶体缺陷 - 部分晶体包含的、会影响电路性能的空隙和层错。
Crystal Indices (see Miller indices)
晶体指数 （参见米勒指数）
% T8 Y3 J, w2 X5 g- d$ @Depletion Layer - A region on a wafer that contains an electrical field that sweeps out charge carriers.
耗尽层 - 晶圆片上的电场区域，此区域排除载流子。
8 k! b4 z1 o: }& b; R* dDimple - A concave depression found on the surface of a wafer that is visible to the eye under the correct lighting conditions.
# [% C5 o) K% X/ B表面起伏 - 在合适的光线下通过肉眼可以发现的晶圆片表面凹陷。
Donor - A contaminate that has donated extra “free” electrons, thus making a wafer “N-Type”.
5 ^, q3 L: ]. e施主 - 可提供“自由”电子的搀杂物，使晶圆片呈现为N型。
Dopant - An element that contributes an electron or a hole to the conduction process, thus altering the conductivity. Dopants for silicon wafers are found in Groups III and V of the Periodic Table of the Elements.
搀杂剂 - 可以为传导过程提供电子或空穴的元素，此元素可以改变传导特性。晶圆片搀杂 剂可以在元素周期表的III 和 V族元素中发现。
. E4 B# |3 X5 g( Z. yDoping - The process of the donation of an electron or hole to the conduction process by a dopant.
掺杂 - 把搀杂剂掺入半导体，通常通过扩散或离子注入工艺实现。
. _' D  Z; s  J, b" w6 mEdge Chip and Indent - An edge imperfection that is greater than 0.25 mm.
  O0 q4 s/ s0 X) _' b& \芯片边缘和缩进 - 晶片中不完整的边缘部分超过0.25毫米。
+ j( ]& u5 s) \5 }) X7 NEdge Exclusion Area - The area located between the fixed quality area and the periphery of a wafer. (This varies according to the dimensions of the wafer.)
5 _5 x) d. B' }1 A& y) H边缘排除区域 - 位于质量保证区和晶圆片外围之间的区域。（根据晶圆片的尺寸不同而有所不同。）
" @' \7 ]" `. ~7 MEdge Exclusion, Nominal (EE) - The distance between the fixed quality area and the periphery of a wafer.
6 G& P. j' G# W) x: P名义上边缘排除(EE) - 质量保证区和晶圆片外围之间的距离
1 o( b& N; r* x  R+ N( T: \Edge Profile - The edges of two bonded wafers that have been shaped either chemically or mechanically.
0 F  |$ U" F- M; z边缘轮廓 - 通过化学或机械方法连接起来的两个晶圆片边缘。
1 Z- P1 B0 L* h$ x% B& @( GEtch - A process of chemical reactions or physical removal to rid the wafer of excess materials.
蚀刻 - 通过化学反应或物理方法去除晶圆片的多余物质。
- O" o3 F. c& R1 PFixed Quality Area (FQA) - The area that is most central on a wafer surface.
质量保证区(FQA) - 晶圆片表面中央的大部分。
5 p$ u2 I9 N- `9 r  j2 H# nFlat - A section of the perimeter of a wafer that has been removed for wafer orientation purposes.
4 [. j6 B( h8 [6 `1 B0 C+ f平边 - 晶圆片圆周上的一个小平面，作为晶向定位的依据。
Flat Diameter - The measurement from the center of the flat through the center of the wafer to the opposite edge of the wafer. (Perpendicular to the flat)
平口直径 - 由小平面的中心通过晶圆片中心到对面边缘的直线距离。
5 U" v9 k( U/ W+ u; j) r; E4 ZFour-Point Probe - Test equipment used to test resistivity of wafers.
+ t8 o$ R) `% j( N( _5 J四探针 - 测量半导体晶片表面电阻的设备。
Furnace and Thermal Processes - Equipment with a temperature gauge used for processing wafers. A constant temperature is required for the process.
炉管和热处理 - 温度测量的工艺设备，具有恒定的处理温度。
Front Side - The top side of a silicon wafer. (This term is not preferred; use front surface instead.)
正面 - 晶圆片的顶部表面（此术语不推荐，建议使用“前部表面”）。
Goniometer - An instrument used in measuring angles.
角度计 - 用来测量角度的设备。
Gradient, Resistivity (not preferred; see resistivity variation)
电阻梯度 （不推荐使用，参见“电阻变化”）
Groove - A scratch that was not completely polished out.
凹槽 - 没有被完全清除的擦伤。
- }& N- \8 E2 C* z+ o$ x6 o/ k+ J7 aHand Scribe Mark - A marking that is hand scratched onto the back surface of a wafer for identification purposes.
  h3 e6 |7 D* V6 w+ {; _手工印记 - 为区分不同的晶圆片而手工在背面做出的标记。
/ r! B- Z$ H2 H# g1 A* QHaze - A mass concentration of surface imperfections, often giving a hazy appearance to the wafer.
+ t! _) E* d( \8 q: ]' g5 I% y雾度 - 晶圆片表面大量的缺陷，常常表现为晶圆片表面呈雾状。
Hole - Similar to a positive charge, this is caused by the absence of a valence electron.
! @* \7 U3 E0 v- H0 y& B% c空穴 - 和正电荷类似，是由缺少价电子引起的。
% w4 H) b9 \6 u/ F4 P4 P硅片行业术语大全(中英文对照 I-Z)
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( M$ M6 A$ r* _/ k1 O0 dIngot - A cylindrical solid made of polycrystalline or single crystal silicon from which wafers are cut.
( y, P! q' S  z# M晶锭 - 由多晶或单晶形成的圆柱体，晶圆片由此切割而成。
% M) A& ^- M8 W7 d9 ?& H. n3 SLaser Light-Scattering Event - A signal pulse that locates surface imperfections on a wafer.
激光散射 - 由晶圆片表面缺陷引起的脉冲信号。
3 A8 @  W- J7 x) LLay - The main direction of surface texture on a wafer.
6 I  z. u6 p3 D, R/ _- O层 - 晶圆片表面结构的主要方向。
  R) N' _8 B# P! m7 aLight Point Defect (LPD) (Not preferred; see localized light-scatterer)
  o6 ~7 Z% _" N6 ]5 J0 R% q# s6 A- \光点缺陷(LPD) （不推荐使用，参见“局部光散射”）
9 b1 s' }3 W7 o: x1 i6 ILithography - The process used to transfer patterns onto wafers.
+ I% D" Z4 {0 U9 s光刻 - 从掩膜到圆片转移的过程。
+ X, H0 ~: K# }) ]$ xLocalized Light-Scatterer - One feature on the surface of a wafer, such as a pit or a scratch that scatters light. It is also called a light point defect.
$ j; T$ H2 B( A6 q, G% `3 i2 [8 S局部光散射 - 晶圆片表面特征，例如小坑或擦伤导致光线散射，也称为光点缺陷。
Lot - Wafers of similar sizes and characteristics placed together in a shipment.
* M( R  u/ Q* O1 _7 r, b批次 - 具有相似尺寸和特性的晶圆片一并放置在一个载片器内。
Majority Carrier - A carrier, either a hole or an electron that is dominant in a specific region, such as electrons in an N-Type area.
多数载流子 - 一种载流子，在半导体材料中起支配作用的空穴或电子，例如在N型中是电子。
Mechanical Test Wafer - A silicon wafer used for testing purposes.
) G, ^5 a$ f8 H; P. ~2 D机械测试晶圆片 - 用于测试的晶圆片。
, e0 c" H) W( LMicroroughness - Surface roughness with spacing between the impurities with a measurement of less than 100 μm.
微粗糙 - 小于100微米的表面粗糙部分。
$ D- R! [4 m" Z2 g3 ]Miller Indices, of a Crystallographic Plane - A system that utilizes three numbers to identify plan orientation in a crystal.
Miller索指数 - 三个整数，用于确定某个并行面。这些整数是来自相同系统的基本向量。
Minimal Conditions or Dimensions - The allowable conditions for determining whether or not a wafer is considered acceptable.
6 w# n+ c4 x" v. f2 \5 F最小条件或方向 - 确定晶圆片是否合格的允许条件。
Minority Carrier - A carrier, either a hole or an electron that is not dominant in a specific region, such as electrons in a P-Type area.
少数载流子 - 在半导体材料中不起支配作用的移动电荷，在P型中是电子，在N型中是空穴。
Mound - A raised defect on the surface of a wafer measuring more than 0.25 mm.
堆垛 - 晶圆片表面超过0.25毫米的缺陷。
Notch - An indent on the edge of a wafer used for orientation purposes.
凹槽 - 晶圆片边缘上用于晶向定位的小凹槽。
2 f1 ]; s+ v( Y2 O8 \Orange Peel - A roughened surface that is visible to the unaided eye.
桔皮 - 可以用肉眼看到的粗糙表面
Orthogonal Misorientation -
直角定向误差 -
Particle - A small piece of material found on a wafer that is not connected with it.
* v$ `8 o, G8 J8 @( t/ F颗粒 - 晶圆片上的细小物质。
Particle Counting - Wafers that are used to test tools for particle contamination.
' v& ]; [, g7 x6 C% J; u% M- n颗粒计算 - 用来测试晶圆片颗粒污染的测试工具。
Particulate Contamination - Particles found on the surface of a wafer. They appear as bright points when a collineated light is shined on the wafer.
颗粒污染 - 晶圆片表面的颗粒。
Pit - A non-removable imperfection found on the surface of a wafer.
' f3 h1 B+ c' F5 `1 a深坑 - 一种晶圆片表面无法消除的缺陷。
Point Defect - A crystal defect that is an impurity, such as a lattice vacancy or an interstitial atom.
5 j+ l6 }9 X2 u6 P* J点缺陷 - 不纯净的晶缺陷，例如格子空缺或原子空隙。
/ R5 F, e, n4 T) g/ ^% nPreferential Etch -
优先蚀刻 -
Premium Wafer - A wafer that can be used for particle counting, measuring pattern resolution in the photolithography process, and metal contamination monitoring. This wafer has very strict specifications for a specific usage, but looser specifications than the prime wafer.
测试晶圆片 - 影印过程中用于颗粒计算、测量溶解度和检测金属污染的晶圆片。对于具体应用该晶圆片有严格的要求，但是要比主晶圆片要求宽松些。
: e) A- @' W" q0 _Primary Orientation Flat - The longest flat found on the wafer.
主定位边 - 晶圆片上最长的定位边。
Process Test Wafer - A wafer that can be used for processes as well as area cleanliness.
加工测试晶圆片 - 用于区域清洁过程中的晶圆片。
3 c- n& @% M- x- p3 gProfilometer - A tool that is used for measuring surface topography.
表面形貌剂 - 一种用来测量晶圆片表面形貌的工具。
4 V7 e! j0 t$ [  }6 ]+ IResistivity (Electrical) - The amount of difficulty that charged carriers have in moving throughout material.
" c' ]; w% d* R电阻率（电学方面） - 材料反抗或对抗电荷在其中通过的一种物理特性。
Required - The minimum specifications needed by the customer when ordering wafers.
: K  g' {9 J. j& z  |% q7 z必需 - 订购晶圆片时客户必须达到的最小规格。
Roughness - The texture found on the surface of the wafer that is spaced very closely together.
1 ~7 g: l5 F2 T+ D粗糙度 - 晶圆片表面间隙很小的纹理。
Saw Marks - Surface irregularities
锯痕 - 表面不规则。
Scan Direction - In the flatness calculation, the direction of the subsites.
扫描方向 - 平整度测量中，局部平面的方向。
* c- m$ M. g& h6 h2 kScanner Site Flatness -
4 p8 V$ h* q. n4 C! `局部平整度扫描仪 -
( N: J, e- [$ g4 p- i& d) YScratch - A mark that is found on the wafer surface.
擦伤 - 晶圆片表面的痕迹。
Secondary Flat - A flat that is smaller than the primary orientation flat. The position of this flat determines what type the wafer is, and also the orientation of the wafer.
# {- F5 g: V1 c$ [9 v. `$ h  k第二定位边 - 比主定位边小的定位边，它的位置决定了晶圆片的类型和晶向。
Shape -
& M$ N0 ]# C' C形状 -
! |/ v* ~5 K) ]9 h6 p' B" k3 N, @7 c4 @Site - An area on the front surface of the wafer that has sides parallel and perpendicular to the primary orientation flat. (This area is rectangular in shape)
# r3 M- t# R$ n+ h- H' B& l局部表面 - 晶圆片前面上平行或垂直于主定位边方向的区域。
Site Array - a neighboring set of sites
局部表面系列 - 一系列的相关局部表面。
3 D7 C7 w. v7 N( f0 f& \$ j$ PSite Flatness -
局部平整 -
. ~1 ^" g( V' U6 c1 f9 bSlip - A defect pattern of small ridges found on the surface of the wafer.
划伤 - 晶圆片表面上的小皱造成的缺陷。
Smudge - A defect or contamination found on the wafer caused by fingerprints.
5 I' r" f( p. {污迹 - 晶圆片上指纹造成的缺陷或污染。
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Striation - Defects or contaminations found in the shape of a helix.
% `; @1 Z$ e( y. X4 y8 d9 T0 O" n条痕 - 螺纹上的缺陷或污染。
Subsite, of a Site - An area found within the site, also rectangular. The center of the subsite must be located within the original site.
4 J% d6 I+ @' Q( z局部子表面 - 局部表面内的区域，也是矩形的。子站中心必须位于原始站点内部。
& `& Q6 D% i1 \7 F( Q- zSurface Texture - Variations found on the real surface of the wafer that deviate from the reference surface.
表面纹理 - 晶圆片实际面与参考面的差异情况。
$ h# `- h+ Y* e6 cTest Wafer - A silicon wafer that is used in manufacturing for monitoring and testing purposes.
测试晶圆片 - 用于生产中监测和测试的晶圆片。
" y' C2 n, t: EThickness of Top Silicon Film - The distance found between the face of the top silicon film and the surface of the oxide layer.
顶部硅膜厚度 - 顶部硅层表面和氧化层表面间的距离。
1 C; v  @: W8 H4 w/ ?# ]* i3 Q% T, X6 BTop Silicon Film - The layer of silicon on which semiconductor devices are placed. This is located on top of the insulating layer.
顶部硅膜 - 生产半导体电路的硅层，位于绝缘层顶部。
6 e1 W  b4 i; M, }. e. ?Total Indicator Reading (TIR) - The smallest distance between planes on the surface of the wafer.
总计指示剂数(TIR) - 晶圆片表面位面间的最短距离。
Virgin Test Wafer - A wafer that has not been used in manufacturing or other processes.
原始测试晶圆片 - 还没有用于生产或其他流程中的晶圆片。
Void - The lack of any sort of bond (particularly a chemical bond) at the site of bonding.
无效 - 在应该绑定的地方没有绑定（特别是化学绑定）。
+ }( ]' A2 i6 N' p3 fWaves - Curves and contours found on the surface of the wafer that can be seen by the naked eye.
波浪 - 晶圆片表面通过肉眼能发现的弯曲和曲线。
6 S4 c+ J; I6 e+ n; c$ B; b' Z# q5 UWaviness - Widely spaced imperfections on the surface of a wafer.
波纹 - 晶圆片表面经常出现的缺陷。