硅片行业术语大全(中英文对照 A-H)

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硅片行业术语大全(中英文对照 A-H)
' s0 T; i) Z; N' F2 A
, b( x8 X* \, H( J- p/ j: RAcceptor - An element, such as boron, indium, and gallium used to create a free hole in a semiconductor. The acceptor atoms are required to have one less valence electron than the semiconductor.
受主 -  一种用来在半导体中形成空穴的元素，比如硼、铟和镓。受主原子必须比半导体元素少一价电子
1 ?/ B' x" {8 H, M, U( ^Alignment Precision - Displacement of patterns that occurs during the photolithography process.
套准精度 - 在光刻工艺中转移图形的精度。
8 |3 \% C6 X+ k! wAnisotropic - A process of etching that has very little or no undercutting
. u/ C4 L: ^2 ~( n9 J/ `各向异性 - 在蚀刻过程中，只做少量或不做侧向凹刻。
Area Contamination - Any foreign particles or material that are found on the surface of a wafer. This is viewed as discolored or smudged, and it is the result of stains, fingerprints, water spots, etc.
2 G  w  P5 @* n: H: W8 x/ y沾污区域 - 任何在晶圆片表面的外来粒子或物质。由沾污、手印和水滴产生的污染。
Azimuth, in Ellipsometry - The angle measured between the plane of incidence and the major axis of the ellipse.
5 F# a% N5 l& P( k椭圆方位角 - 测量入射面和主晶轴之间的角度。
Backside - The bottom surface of a silicon wafer. (Note: This term is not preferred; instead, use ‘back surface’.)
; m/ @- r6 w4 f* O' a背面 - 晶圆片的底部表面。（注：不推荐该术语，建议使用“背部表面”）
& p; D# ~% m: R( z' @Base Silicon Layer - The silicon wafer that is located underneath the insulator layer, which supports the silicon film on top of the wafer.
底部硅层 - 在绝缘层下部的晶圆片，是顶部硅层的基础。
Bipolar - Transistors that are able to use both holes and electrons as charge carriers.
* q! ^& a2 L) ?双极晶体管 - 能够采用空穴和电子传导电荷的晶体管。
Bonded Wafers - Two silicon wafers that have been bonded together by silicon dioxide, which acts as an insulating layer.
8 _2 {- V7 y0 F绑定晶圆片 - 两个晶圆片通过二氧化硅层结合到一起，作为绝缘层。
Bonding Interface - The area where the bonding of two wafers occurs.
绑定面 - 两个晶圆片结合的接触区。
  ]5 ^7 F( p2 t5 B- w$ Y* p) SBuried Layer - A path of low resistance for a current moving in a device. Many of these dopants are antimony and arsenic.
# v$ ^6 u' [; e) e9 a1 ?5 a埋层 - 为了电路电流流动而形成的低电阻路径，搀杂剂是锑和砷。
7 U9 ~0 E2 q5 x" x$ D1 SBuried Oxide Layer (BOX) - The layer that insulates between the two wafers.
6 ^, e1 j9 g; W* F' k% s氧化埋层(BOX) - 在两个晶圆片间的绝缘层。
Carrier - Valence holes and conduction electrons that are capable of carrying a charge through a solid surface in a silicon wafer.
% \8 ^2 G# v& z" s1 ^; c载流子 - 晶圆片中用来传导电流的空穴或电子。
Chemical-Mechanical Polish (CMP) - A process of flattening and polishing wafers that utilizes both chemical removal and mechanical buffing. It is used during the fabrication process.
* g1 W' o* G4 R+ d- l化学-机械抛光(CMP) - 平整和抛光晶圆片的工艺，采用化学移除和机械抛光两种方式。此工艺在前道工艺中使用。
Chuck Mark - A mark found on either surface of a wafer, caused by either a robotic end effector, a chuck, or a wand.
卡盘痕迹 - 在晶圆片任意表面发现的由机械手、卡盘或托盘造成的痕迹。
) B7 T" @0 S# F/ k2 I* \" p# ~Cleavage Plane - A fracture plane that is preferred.
解理面 - 破裂面
Crack - A mark found on a wafer that is greater than 0.25 mm in length.
裂纹 - 长度大于0.25毫米的晶圆片表面微痕。
Crater - Visible under diffused illumination, a surface imperfection on a wafer that can be distinguished individually.
1 N4 G! ^" c( D微坑 - 在扩散照明下可见的，晶圆片表面可区分的缺陷。
Conductivity (electrical) - A measurement of how easily charge carriers can flow throughout a material.
' t% x6 f3 ?4 H传导性（电学方面） - 一种关于载流子通过物质难易度的测量指标 。
1 M3 f" J  e" E/ ]9 z. v: ZConductivity Type - The type of charge carriers in a wafer, such as “N-type” and “P-type”.
( n3 V4 f9 y9 Y导电类型 - 晶圆片中载流子的类型，N型和P型。
7 Y" _5 V1 c9 V- b# n3 z6 xContaminant, Particulate (see light point defect)
, M6 ?6 R6 w/ Y( \7 p" U9 Q污染微粒 （参见光点缺陷）
Contamination Area - An area that contains particles that can negatively affect the characteristics of a silicon wafer.
沾污区域 - 部分晶圆片区域被颗粒沾污，造成不利特性影响。
/ L, ~( h8 S6 ]" j, j2 ~Contamination Particulate - Particles found on the surface of a silicon wafer.
$ F( f: V4 s1 m( M9 b1 }2 n) F沾污颗粒 - 晶圆片表面上的颗粒。
+ V- ]. e% T; g& zCrystal Defect - Parts of the crystal that contain vacancies and dislocations that can have an impact on a circuit’s electrical performance.
9 y( R" A" n* ], {1 C& X3 R晶体缺陷 - 部分晶体包含的、会影响电路性能的空隙和层错。
$ W1 Z1 z1 n1 H- hCrystal Indices (see Miller indices)
晶体指数 （参见米勒指数）
: _8 A' p1 Q2 v- r1 g: pDepletion Layer - A region on a wafer that contains an electrical field that sweeps out charge carriers.
耗尽层 - 晶圆片上的电场区域，此区域排除载流子。
Dimple - A concave depression found on the surface of a wafer that is visible to the eye under the correct lighting conditions.
表面起伏 - 在合适的光线下通过肉眼可以发现的晶圆片表面凹陷。
Donor - A contaminate that has donated extra “free” electrons, thus making a wafer “N-Type”.
施主 - 可提供“自由”电子的搀杂物，使晶圆片呈现为N型。
7 f* k- \1 M& D" H& C4 PDopant - An element that contributes an electron or a hole to the conduction process, thus altering the conductivity. Dopants for silicon wafers are found in Groups III and V of the Periodic Table of the Elements.
搀杂剂 - 可以为传导过程提供电子或空穴的元素，此元素可以改变传导特性。晶圆片搀杂 剂可以在元素周期表的III 和 V族元素中发现。
( Q' s; M" P* _3 u" t$ W# A, G. {Doping - The process of the donation of an electron or hole to the conduction process by a dopant.
掺杂 - 把搀杂剂掺入半导体，通常通过扩散或离子注入工艺实现。
9 j9 o- t8 e& {% z; }Edge Chip and Indent - An edge imperfection that is greater than 0.25 mm.
6 |+ m& j9 ]( L/ |4 s, T3 [芯片边缘和缩进 - 晶片中不完整的边缘部分超过0.25毫米。
Edge Exclusion Area - The area located between the fixed quality area and the periphery of a wafer. (This varies according to the dimensions of the wafer.)
1 {3 \- c# C2 F) j* H/ H: _$ F' K8 a边缘排除区域 - 位于质量保证区和晶圆片外围之间的区域。（根据晶圆片的尺寸不同而有所不同。）
Edge Exclusion, Nominal (EE) - The distance between the fixed quality area and the periphery of a wafer.
名义上边缘排除(EE) - 质量保证区和晶圆片外围之间的距离
2 x3 G% q" s0 bEdge Profile - The edges of two bonded wafers that have been shaped either chemically or mechanically.
边缘轮廓 - 通过化学或机械方法连接起来的两个晶圆片边缘。
3 J' Q$ k2 ?* j# t8 bEtch - A process of chemical reactions or physical removal to rid the wafer of excess materials.
蚀刻 - 通过化学反应或物理方法去除晶圆片的多余物质。
Fixed Quality Area (FQA) - The area that is most central on a wafer surface.
质量保证区(FQA) - 晶圆片表面中央的大部分。
Flat - A section of the perimeter of a wafer that has been removed for wafer orientation purposes.
平边 - 晶圆片圆周上的一个小平面，作为晶向定位的依据。
Flat Diameter - The measurement from the center of the flat through the center of the wafer to the opposite edge of the wafer. (Perpendicular to the flat)
" `# z9 s4 t  P# g4 L! p平口直径 - 由小平面的中心通过晶圆片中心到对面边缘的直线距离。
$ k& [! k! a2 JFour-Point Probe - Test equipment used to test resistivity of wafers.
四探针 - 测量半导体晶片表面电阻的设备。
Furnace and Thermal Processes - Equipment with a temperature gauge used for processing wafers. A constant temperature is required for the process.
炉管和热处理 - 温度测量的工艺设备，具有恒定的处理温度。
Front Side - The top side of a silicon wafer. (This term is not preferred; use front surface instead.)
* @2 V2 W3 r! _" s2 H! @9 W正面 - 晶圆片的顶部表面（此术语不推荐，建议使用“前部表面”）。
Goniometer - An instrument used in measuring angles.
- X/ H* c4 \* y7 _角度计 - 用来测量角度的设备。
/ R8 T# f9 Q( _5 H4 dGradient, Resistivity (not preferred; see resistivity variation)
电阻梯度 （不推荐使用，参见“电阻变化”）
8 n! s! Z) J" D3 I5 q, [Groove - A scratch that was not completely polished out.
凹槽 - 没有被完全清除的擦伤。
6 Y% Q+ E$ u' D) DHand Scribe Mark - A marking that is hand scratched onto the back surface of a wafer for identification purposes.
- D: v, y1 c% l: C手工印记 - 为区分不同的晶圆片而手工在背面做出的标记。
; m: k3 x% H' N4 X  zHaze - A mass concentration of surface imperfections, often giving a hazy appearance to the wafer.
. K9 N$ |$ L0 `! [$ t( L雾度 - 晶圆片表面大量的缺陷，常常表现为晶圆片表面呈雾状。
8 q8 Y% U% @3 n% GHole - Similar to a positive charge, this is caused by the absence of a valence electron.
7 C2 z0 A0 R3 y8 C4 a- K空穴 - 和正电荷类似，是由缺少价电子引起的。
硅片行业术语大全(中英文对照 I-Z)

Ingot - A cylindrical solid made of polycrystalline or single crystal silicon from which wafers are cut.
) u" P- {$ B% z  j/ J晶锭 - 由多晶或单晶形成的圆柱体，晶圆片由此切割而成。
' J7 Q% I5 I, H* JLaser Light-Scattering Event - A signal pulse that locates surface imperfections on a wafer.
  f1 |! Z7 @$ q- Z6 y激光散射 - 由晶圆片表面缺陷引起的脉冲信号。
. r; r# @$ t& c3 t! k# vLay - The main direction of surface texture on a wafer.
3 c. K% E. _0 v" S层 - 晶圆片表面结构的主要方向。
Light Point Defect (LPD) (Not preferred; see localized light-scatterer)
- o1 `' T5 a) \; W& L光点缺陷(LPD) （不推荐使用，参见“局部光散射”）
  O5 z. i; b8 M' @+ }" x# CLithography - The process used to transfer patterns onto wafers.
光刻 - 从掩膜到圆片转移的过程。
  h4 i9 `( j5 T! M4 ?6 S" ~  h5 FLocalized Light-Scatterer - One feature on the surface of a wafer, such as a pit or a scratch that scatters light. It is also called a light point defect.
局部光散射 - 晶圆片表面特征，例如小坑或擦伤导致光线散射，也称为光点缺陷。
7 \" \1 L; m9 _# y) SLot - Wafers of similar sizes and characteristics placed together in a shipment.
批次 - 具有相似尺寸和特性的晶圆片一并放置在一个载片器内。
5 o# o0 P$ M* T2 V. ]Majority Carrier - A carrier, either a hole or an electron that is dominant in a specific region, such as electrons in an N-Type area.
多数载流子 - 一种载流子，在半导体材料中起支配作用的空穴或电子，例如在N型中是电子。
Mechanical Test Wafer - A silicon wafer used for testing purposes.
机械测试晶圆片 - 用于测试的晶圆片。
: Y) K, c' i. T6 cMicroroughness - Surface roughness with spacing between the impurities with a measurement of less than 100 μm.
! }; Y8 n% Q0 ^. D; v! N2 R7 V微粗糙 - 小于100微米的表面粗糙部分。
5 t) w5 p0 E% @Miller Indices, of a Crystallographic Plane - A system that utilizes three numbers to identify plan orientation in a crystal.
$ u5 O8 ]4 G! E' T5 NMiller索指数 - 三个整数，用于确定某个并行面。这些整数是来自相同系统的基本向量。
Minimal Conditions or Dimensions - The allowable conditions for determining whether or not a wafer is considered acceptable.
最小条件或方向 - 确定晶圆片是否合格的允许条件。
Minority Carrier - A carrier, either a hole or an electron that is not dominant in a specific region, such as electrons in a P-Type area.
8 s" Z8 g' e, g$ V9 J( y少数载流子 - 在半导体材料中不起支配作用的移动电荷，在P型中是电子，在N型中是空穴。
; ]: _9 e( O1 ?" lMound - A raised defect on the surface of a wafer measuring more than 0.25 mm.
, X# P: a+ X& l: U1 h: z堆垛 - 晶圆片表面超过0.25毫米的缺陷。
3 ^! Y6 N& g; k& a$ c+ [: }Notch - An indent on the edge of a wafer used for orientation purposes.
凹槽 - 晶圆片边缘上用于晶向定位的小凹槽。
Orange Peel - A roughened surface that is visible to the unaided eye.
* |5 B0 `% l. L! f' C, m# _桔皮 - 可以用肉眼看到的粗糙表面
Orthogonal Misorientation -
" ]2 C' C+ Q, P# ^- [% p0 m, k直角定向误差 -
Particle - A small piece of material found on a wafer that is not connected with it.
颗粒 - 晶圆片上的细小物质。
1 u% |7 h* [+ z5 n9 B9 i! KParticle Counting - Wafers that are used to test tools for particle contamination.
' e+ b2 W" r8 R# A颗粒计算 - 用来测试晶圆片颗粒污染的测试工具。
6 P; K! k2 q- fParticulate Contamination - Particles found on the surface of a wafer. They appear as bright points when a collineated light is shined on the wafer.
颗粒污染 - 晶圆片表面的颗粒。
: G6 R# p- [/ N2 XPit - A non-removable imperfection found on the surface of a wafer.
3 @1 k' m9 h( R( R: i, _, V& w深坑 - 一种晶圆片表面无法消除的缺陷。
Point Defect - A crystal defect that is an impurity, such as a lattice vacancy or an interstitial atom.
4 C, _. Z1 L8 q6 {; j点缺陷 - 不纯净的晶缺陷，例如格子空缺或原子空隙。
% X' }6 e) G" k; M; `, @7 DPreferential Etch -
优先蚀刻 -
7 Z7 x* O3 N, w. C8 HPremium Wafer - A wafer that can be used for particle counting, measuring pattern resolution in the photolithography process, and metal contamination monitoring. This wafer has very strict specifications for a specific usage, but looser specifications than the prime wafer.
测试晶圆片 - 影印过程中用于颗粒计算、测量溶解度和检测金属污染的晶圆片。对于具体应用该晶圆片有严格的要求，但是要比主晶圆片要求宽松些。
; B& h2 p/ W6 ^" T: p9 ?  ~Primary Orientation Flat - The longest flat found on the wafer.
# K3 k+ h" y( h. Y主定位边 - 晶圆片上最长的定位边。
; l" q; U7 x) S+ m3 [" `' dProcess Test Wafer - A wafer that can be used for processes as well as area cleanliness.
加工测试晶圆片 - 用于区域清洁过程中的晶圆片。
6 S9 Z8 j# A7 f* W* d: TProfilometer - A tool that is used for measuring surface topography.
9 y8 n, w& Z* K0 @6 n, c表面形貌剂 - 一种用来测量晶圆片表面形貌的工具。
Resistivity (Electrical) - The amount of difficulty that charged carriers have in moving throughout material.
4 r* ~% A9 h. f# N2 Q- i5 }, b! G电阻率（电学方面） - 材料反抗或对抗电荷在其中通过的一种物理特性。
2 p" q' _2 [% o/ b8 p$ q# J8 sRequired - The minimum specifications needed by the customer when ordering wafers.
必需 - 订购晶圆片时客户必须达到的最小规格。
) M8 P6 g& t$ N1 U6 ]Roughness - The texture found on the surface of the wafer that is spaced very closely together.
粗糙度 - 晶圆片表面间隙很小的纹理。
Saw Marks - Surface irregularities
锯痕 - 表面不规则。
! R: p! ?4 j0 g5 MScan Direction - In the flatness calculation, the direction of the subsites.
: A/ N6 j/ X) P  c0 p9 v扫描方向 - 平整度测量中，局部平面的方向。
/ \. h3 U$ V9 S$ s$ x' |Scanner Site Flatness -
3 b+ k  v2 A9 P" w$ w0 d; v3 `局部平整度扫描仪 -
' }2 j, t( N5 Z) V; H/ YScratch - A mark that is found on the wafer surface.
9 r: H2 B. j0 G" a; Q  {1 a擦伤 - 晶圆片表面的痕迹。
Secondary Flat - A flat that is smaller than the primary orientation flat. The position of this flat determines what type the wafer is, and also the orientation of the wafer.
  f2 D' k6 {: k" |& }第二定位边 - 比主定位边小的定位边，它的位置决定了晶圆片的类型和晶向。
' ]+ y1 @& T# N! kShape -
) d( {$ j# Y- E形状 -
Site - An area on the front surface of the wafer that has sides parallel and perpendicular to the primary orientation flat. (This area is rectangular in shape)
局部表面 - 晶圆片前面上平行或垂直于主定位边方向的区域。
7 X" }2 ^) c4 m& L1 W! MSite Array - a neighboring set of sites
局部表面系列 - 一系列的相关局部表面。
# J6 ?! Z, b. T$ A) O  dSite Flatness -
4 c, b2 q% Y! i7 b/ V- o  `局部平整 -
Slip - A defect pattern of small ridges found on the surface of the wafer.
划伤 - 晶圆片表面上的小皱造成的缺陷。
9 f5 m' U3 ^3 z$ uSmudge - A defect or contamination found on the wafer caused by fingerprints.
污迹 - 晶圆片上指纹造成的缺陷或污染。
" B) s, q9 x1 S& k5 J; GSori -
Striation - Defects or contaminations found in the shape of a helix.
# t, D, {% z& k, \条痕 - 螺纹上的缺陷或污染。
$ A8 h6 U  G- f" S0 _Subsite, of a Site - An area found within the site, also rectangular. The center of the subsite must be located within the original site.
局部子表面 - 局部表面内的区域，也是矩形的。子站中心必须位于原始站点内部。
Surface Texture - Variations found on the real surface of the wafer that deviate from the reference surface.
$ Q. C; U: @# s. }( U表面纹理 - 晶圆片实际面与参考面的差异情况。
Test Wafer - A silicon wafer that is used in manufacturing for monitoring and testing purposes.
) m( z, g( h; ^/ h" g' J7 K测试晶圆片 - 用于生产中监测和测试的晶圆片。
6 k. R& \0 P% B% u$ i: A+ `* zThickness of Top Silicon Film - The distance found between the face of the top silicon film and the surface of the oxide layer.
/ r1 }9 j# ]3 |( e$ D# i* k8 v7 \7 X顶部硅膜厚度 - 顶部硅层表面和氧化层表面间的距离。
Top Silicon Film - The layer of silicon on which semiconductor devices are placed. This is located on top of the insulating layer.
5 C4 `! w$ U5 R# q( C顶部硅膜 - 生产半导体电路的硅层，位于绝缘层顶部。
2 ?6 t- p7 q* \3 f3 q, a4 [$ oTotal Indicator Reading (TIR) - The smallest distance between planes on the surface of the wafer.
总计指示剂数(TIR) - 晶圆片表面位面间的最短距离。
5 _4 y  n( I5 n0 F1 c- ?Virgin Test Wafer - A wafer that has not been used in manufacturing or other processes.
原始测试晶圆片 - 还没有用于生产或其他流程中的晶圆片。
Void - The lack of any sort of bond (particularly a chemical bond) at the site of bonding.
2 I" ^4 O  {$ M. b* a) I3 q无效 - 在应该绑定的地方没有绑定（特别是化学绑定）。
Waves - Curves and contours found on the surface of the wafer that can be seen by the naked eye.
8 ]: H5 J( T* i波浪 - 晶圆片表面通过肉眼能发现的弯曲和曲线。
Waviness - Widely spaced imperfections on the surface of a wafer.
波纹 - 晶圆片表面经常出现的缺陷。