硅片行业术语大全(中英文对照 A-H)

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硅片行业术语大全(中英文对照 A-H)
( V8 T/ y  r# L% |/ ]
Acceptor - An element, such as boron, indium, and gallium used to create a free hole in a semiconductor. The acceptor atoms are required to have one less valence electron than the semiconductor.
4 A% U3 r) U1 ~受主 -  一种用来在半导体中形成空穴的元素，比如硼、铟和镓。受主原子必须比半导体元素少一价电子
Alignment Precision - Displacement of patterns that occurs during the photolithography process.
8 |7 m) v: j! w0 C3 ?( Z" ?) @套准精度 - 在光刻工艺中转移图形的精度。
9 X* e4 v9 {3 |# L2 {/ R  m1 Q: fAnisotropic - A process of etching that has very little or no undercutting
各向异性 - 在蚀刻过程中，只做少量或不做侧向凹刻。
Area Contamination - Any foreign particles or material that are found on the surface of a wafer. This is viewed as discolored or smudged, and it is the result of stains, fingerprints, water spots, etc.
6 k. a6 |3 c. S) Y' H沾污区域 - 任何在晶圆片表面的外来粒子或物质。由沾污、手印和水滴产生的污染。
Azimuth, in Ellipsometry - The angle measured between the plane of incidence and the major axis of the ellipse.
椭圆方位角 - 测量入射面和主晶轴之间的角度。
; \( T. E  R. f& [+ Y, ~: E, XBackside - The bottom surface of a silicon wafer. (Note: This term is not preferred; instead, use ‘back surface’.)
背面 - 晶圆片的底部表面。（注：不推荐该术语，建议使用“背部表面”）
Base Silicon Layer - The silicon wafer that is located underneath the insulator layer, which supports the silicon film on top of the wafer.
底部硅层 - 在绝缘层下部的晶圆片，是顶部硅层的基础。
Bipolar - Transistors that are able to use both holes and electrons as charge carriers.
) k- z# O4 k; x9 ~, Q2 Q9 T双极晶体管 - 能够采用空穴和电子传导电荷的晶体管。
Bonded Wafers - Two silicon wafers that have been bonded together by silicon dioxide, which acts as an insulating layer.
绑定晶圆片 - 两个晶圆片通过二氧化硅层结合到一起，作为绝缘层。
3 u2 s5 s( @+ r0 O; e, M1 uBonding Interface - The area where the bonding of two wafers occurs.
绑定面 - 两个晶圆片结合的接触区。
$ A: [* Z5 F7 x( r8 q5 |Buried Layer - A path of low resistance for a current moving in a device. Many of these dopants are antimony and arsenic.
% Q6 t) l; D. a6 `! A3 Z埋层 - 为了电路电流流动而形成的低电阻路径，搀杂剂是锑和砷。
Buried Oxide Layer (BOX) - The layer that insulates between the two wafers.
, a8 J' Z; g! D  N* _1 y6 {氧化埋层(BOX) - 在两个晶圆片间的绝缘层。
. F5 Z+ \: Y+ R, NCarrier - Valence holes and conduction electrons that are capable of carrying a charge through a solid surface in a silicon wafer.
载流子 - 晶圆片中用来传导电流的空穴或电子。
6 d. c& t5 c; T/ c! W* jChemical-Mechanical Polish (CMP) - A process of flattening and polishing wafers that utilizes both chemical removal and mechanical buffing. It is used during the fabrication process.
化学-机械抛光(CMP) - 平整和抛光晶圆片的工艺，采用化学移除和机械抛光两种方式。此工艺在前道工艺中使用。
Chuck Mark - A mark found on either surface of a wafer, caused by either a robotic end effector, a chuck, or a wand.
卡盘痕迹 - 在晶圆片任意表面发现的由机械手、卡盘或托盘造成的痕迹。
Cleavage Plane - A fracture plane that is preferred.
解理面 - 破裂面
/ l9 H' z7 H5 r6 ~Crack - A mark found on a wafer that is greater than 0.25 mm in length.
2 i! j# o: A+ ?1 @4 H裂纹 - 长度大于0.25毫米的晶圆片表面微痕。
Crater - Visible under diffused illumination, a surface imperfection on a wafer that can be distinguished individually.
! W/ P4 b7 C' e* `微坑 - 在扩散照明下可见的，晶圆片表面可区分的缺陷。
Conductivity (electrical) - A measurement of how easily charge carriers can flow throughout a material.
& Q1 B- R7 l4 I- Q传导性（电学方面） - 一种关于载流子通过物质难易度的测量指标 。
Conductivity Type - The type of charge carriers in a wafer, such as “N-type” and “P-type”.
导电类型 - 晶圆片中载流子的类型，N型和P型。
2 _5 p+ G" g2 i7 WContaminant, Particulate (see light point defect)
污染微粒 （参见光点缺陷）
Contamination Area - An area that contains particles that can negatively affect the characteristics of a silicon wafer.
9 R$ L  ^% u0 r& c沾污区域 - 部分晶圆片区域被颗粒沾污，造成不利特性影响。
Contamination Particulate - Particles found on the surface of a silicon wafer.
沾污颗粒 - 晶圆片表面上的颗粒。
- W  \4 L4 t) MCrystal Defect - Parts of the crystal that contain vacancies and dislocations that can have an impact on a circuit’s electrical performance.
9 D9 G) c. w. l9 c晶体缺陷 - 部分晶体包含的、会影响电路性能的空隙和层错。
& p9 h; ], g" o7 a4 X& _) e$ x$ fCrystal Indices (see Miller indices)
6 A7 f/ M; o9 r+ Q3 ^) c% ?晶体指数 （参见米勒指数）
$ O$ R* `  b" o( M% ~# a8 VDepletion Layer - A region on a wafer that contains an electrical field that sweeps out charge carriers.
耗尽层 - 晶圆片上的电场区域，此区域排除载流子。
; k  Q" O2 w3 F& T  B( Q$ `Dimple - A concave depression found on the surface of a wafer that is visible to the eye under the correct lighting conditions.
) Q. S, X$ m9 Y) G7 D* t' q: H表面起伏 - 在合适的光线下通过肉眼可以发现的晶圆片表面凹陷。
/ u4 V- o& u; \: c' J# @. E3 SDonor - A contaminate that has donated extra “free” electrons, thus making a wafer “N-Type”.
施主 - 可提供“自由”电子的搀杂物，使晶圆片呈现为N型。
$ ^, s9 S& S3 e% L( x  nDopant - An element that contributes an electron or a hole to the conduction process, thus altering the conductivity. Dopants for silicon wafers are found in Groups III and V of the Periodic Table of the Elements.
7 f" E' N6 w8 v4 ~6 t$ x搀杂剂 - 可以为传导过程提供电子或空穴的元素，此元素可以改变传导特性。晶圆片搀杂 剂可以在元素周期表的III 和 V族元素中发现。
# d. [0 d# B9 R* L3 BDoping - The process of the donation of an electron or hole to the conduction process by a dopant.
" {: z* H: [/ ]) s% B掺杂 - 把搀杂剂掺入半导体，通常通过扩散或离子注入工艺实现。
Edge Chip and Indent - An edge imperfection that is greater than 0.25 mm.
芯片边缘和缩进 - 晶片中不完整的边缘部分超过0.25毫米。
Edge Exclusion Area - The area located between the fixed quality area and the periphery of a wafer. (This varies according to the dimensions of the wafer.)
边缘排除区域 - 位于质量保证区和晶圆片外围之间的区域。（根据晶圆片的尺寸不同而有所不同。）
7 ~) p% B2 H2 v3 CEdge Exclusion, Nominal (EE) - The distance between the fixed quality area and the periphery of a wafer.
: f% ?/ }4 D, P名义上边缘排除(EE) - 质量保证区和晶圆片外围之间的距离
& j% X5 w7 l) \4 T8 B& Y. pEdge Profile - The edges of two bonded wafers that have been shaped either chemically or mechanically.
/ }! K1 w9 m( w7 g边缘轮廓 - 通过化学或机械方法连接起来的两个晶圆片边缘。
  \1 \' o( @: L& l$ X' }. pEtch - A process of chemical reactions or physical removal to rid the wafer of excess materials.
" G  M3 Y2 A( m4 }7 P. i: Y蚀刻 - 通过化学反应或物理方法去除晶圆片的多余物质。
Fixed Quality Area (FQA) - The area that is most central on a wafer surface.
9 M8 S" o8 P! G7 [. }+ D0 a+ [质量保证区(FQA) - 晶圆片表面中央的大部分。
Flat - A section of the perimeter of a wafer that has been removed for wafer orientation purposes.
平边 - 晶圆片圆周上的一个小平面，作为晶向定位的依据。
# c% B5 }7 V0 D) v- YFlat Diameter - The measurement from the center of the flat through the center of the wafer to the opposite edge of the wafer. (Perpendicular to the flat)
平口直径 - 由小平面的中心通过晶圆片中心到对面边缘的直线距离。
- m* u5 B$ p" m. {5 ~- a: rFour-Point Probe - Test equipment used to test resistivity of wafers.
8 Q! g- b1 J; m* |四探针 - 测量半导体晶片表面电阻的设备。
  r, J4 o0 G) Y7 z! ^+ d" VFurnace and Thermal Processes - Equipment with a temperature gauge used for processing wafers. A constant temperature is required for the process.
; Z  S4 D; E% k( m! L' a炉管和热处理 - 温度测量的工艺设备，具有恒定的处理温度。
Front Side - The top side of a silicon wafer. (This term is not preferred; use front surface instead.)
2 r. {9 W: Y4 C# r" J正面 - 晶圆片的顶部表面（此术语不推荐，建议使用“前部表面”）。
0 g5 a, Z8 k6 w& C7 |$ x6 QGoniometer - An instrument used in measuring angles.
! B. }/ ?2 F4 K角度计 - 用来测量角度的设备。
! |. [: m1 M/ {: Z& TGradient, Resistivity (not preferred; see resistivity variation)
电阻梯度 （不推荐使用，参见“电阻变化”）
Groove - A scratch that was not completely polished out.
凹槽 - 没有被完全清除的擦伤。
Hand Scribe Mark - A marking that is hand scratched onto the back surface of a wafer for identification purposes.
, \, f- Q7 K/ J! R' o( o手工印记 - 为区分不同的晶圆片而手工在背面做出的标记。
Haze - A mass concentration of surface imperfections, often giving a hazy appearance to the wafer.
雾度 - 晶圆片表面大量的缺陷，常常表现为晶圆片表面呈雾状。
3 |( p) F, `; G  D9 k" U8 dHole - Similar to a positive charge, this is caused by the absence of a valence electron.
空穴 - 和正电荷类似，是由缺少价电子引起的。
硅片行业术语大全(中英文对照 I-Z)

Ingot - A cylindrical solid made of polycrystalline or single crystal silicon from which wafers are cut.
晶锭 - 由多晶或单晶形成的圆柱体，晶圆片由此切割而成。
' ~/ q2 R8 B( E# L" I- iLaser Light-Scattering Event - A signal pulse that locates surface imperfections on a wafer.
激光散射 - 由晶圆片表面缺陷引起的脉冲信号。
! u; {6 H) K: q! f! q# yLay - The main direction of surface texture on a wafer.
6 ^0 D' n" h9 t* J4 ]/ n* G$ ?层 - 晶圆片表面结构的主要方向。
3 R1 h" x! W* H  k. ]Light Point Defect (LPD) (Not preferred; see localized light-scatterer)
& G; f; Q6 k/ X. O' z$ c光点缺陷(LPD) （不推荐使用，参见“局部光散射”）
+ o$ a7 N3 @& D& z! pLithography - The process used to transfer patterns onto wafers.
! @* f1 i+ [, e8 `5 |3 g2 e光刻 - 从掩膜到圆片转移的过程。
6 _" f& N0 f5 g7 S9 L7 ~. eLocalized Light-Scatterer - One feature on the surface of a wafer, such as a pit or a scratch that scatters light. It is also called a light point defect.
- f3 t1 d8 X4 e' L局部光散射 - 晶圆片表面特征，例如小坑或擦伤导致光线散射，也称为光点缺陷。
Lot - Wafers of similar sizes and characteristics placed together in a shipment.
批次 - 具有相似尺寸和特性的晶圆片一并放置在一个载片器内。
+ j; v, [0 T1 p3 {1 Y9 {. H! v" eMajority Carrier - A carrier, either a hole or an electron that is dominant in a specific region, such as electrons in an N-Type area.
多数载流子 - 一种载流子，在半导体材料中起支配作用的空穴或电子，例如在N型中是电子。
9 U, U0 T" O( _  o$ t: @9 [' CMechanical Test Wafer - A silicon wafer used for testing purposes.
机械测试晶圆片 - 用于测试的晶圆片。
8 b% A. V" P- P6 \Microroughness - Surface roughness with spacing between the impurities with a measurement of less than 100 μm.
微粗糙 - 小于100微米的表面粗糙部分。
Miller Indices, of a Crystallographic Plane - A system that utilizes three numbers to identify plan orientation in a crystal.
7 {- u* u* `( `! [( i8 r) N; WMiller索指数 - 三个整数，用于确定某个并行面。这些整数是来自相同系统的基本向量。
Minimal Conditions or Dimensions - The allowable conditions for determining whether or not a wafer is considered acceptable.
最小条件或方向 - 确定晶圆片是否合格的允许条件。
Minority Carrier - A carrier, either a hole or an electron that is not dominant in a specific region, such as electrons in a P-Type area.
少数载流子 - 在半导体材料中不起支配作用的移动电荷，在P型中是电子，在N型中是空穴。
Mound - A raised defect on the surface of a wafer measuring more than 0.25 mm.
3 |) V' {2 d8 C6 ~堆垛 - 晶圆片表面超过0.25毫米的缺陷。
Notch - An indent on the edge of a wafer used for orientation purposes.
凹槽 - 晶圆片边缘上用于晶向定位的小凹槽。
Orange Peel - A roughened surface that is visible to the unaided eye.
: \4 d4 v0 B, x1 C/ ~桔皮 - 可以用肉眼看到的粗糙表面
Orthogonal Misorientation -
直角定向误差 -
8 D( L5 T$ D( a* C1 r5 tParticle - A small piece of material found on a wafer that is not connected with it.
, U6 }0 H8 c/ J, c- q& y9 C! ?颗粒 - 晶圆片上的细小物质。
; `( Y. F# P1 g" WParticle Counting - Wafers that are used to test tools for particle contamination.
$ v7 U& c' T& l1 f3 ~6 G颗粒计算 - 用来测试晶圆片颗粒污染的测试工具。
" f. s$ Q. p5 e9 U0 [" ^5 p( T% jParticulate Contamination - Particles found on the surface of a wafer. They appear as bright points when a collineated light is shined on the wafer.
颗粒污染 - 晶圆片表面的颗粒。
! N; P9 m9 V( b, t& APit - A non-removable imperfection found on the surface of a wafer.
& d# [8 H# b/ R$ y+ S2 W9 E/ r深坑 - 一种晶圆片表面无法消除的缺陷。
, U! q5 m* f8 Q2 c9 IPoint Defect - A crystal defect that is an impurity, such as a lattice vacancy or an interstitial atom.
点缺陷 - 不纯净的晶缺陷，例如格子空缺或原子空隙。
" Z# {$ N+ E8 X- w* V$ HPreferential Etch -
优先蚀刻 -
& @( e: p1 l0 X, NPremium Wafer - A wafer that can be used for particle counting, measuring pattern resolution in the photolithography process, and metal contamination monitoring. This wafer has very strict specifications for a specific usage, but looser specifications than the prime wafer.
测试晶圆片 - 影印过程中用于颗粒计算、测量溶解度和检测金属污染的晶圆片。对于具体应用该晶圆片有严格的要求，但是要比主晶圆片要求宽松些。
8 {1 @0 @, K6 h- B* RPrimary Orientation Flat - The longest flat found on the wafer.
, }9 K, t+ I% ?8 J% H. ^9 P主定位边 - 晶圆片上最长的定位边。
3 g% y  G$ M0 o- G# oProcess Test Wafer - A wafer that can be used for processes as well as area cleanliness.
加工测试晶圆片 - 用于区域清洁过程中的晶圆片。
# J; i- B& X7 L6 b: ZProfilometer - A tool that is used for measuring surface topography.
表面形貌剂 - 一种用来测量晶圆片表面形貌的工具。
Resistivity (Electrical) - The amount of difficulty that charged carriers have in moving throughout material.
. h5 A0 K0 k2 D' M2 J3 j电阻率（电学方面） - 材料反抗或对抗电荷在其中通过的一种物理特性。
( Q+ f% {  Z6 u/ |) `! ?Required - The minimum specifications needed by the customer when ordering wafers.
必需 - 订购晶圆片时客户必须达到的最小规格。
Roughness - The texture found on the surface of the wafer that is spaced very closely together.
  M3 Q. R2 ]' A& R4 a. C  @1 Z7 f粗糙度 - 晶圆片表面间隙很小的纹理。
" E1 C' b  J* k; uSaw Marks - Surface irregularities
锯痕 - 表面不规则。
* K2 _4 Z; Y3 u8 C8 p( S% lScan Direction - In the flatness calculation, the direction of the subsites.
扫描方向 - 平整度测量中，局部平面的方向。
Scanner Site Flatness -
1 t5 x" L( b, y2 B! h6 v* Y, M局部平整度扫描仪 -
* ^% [- D% l" D2 p$ l# ]Scratch - A mark that is found on the wafer surface.
擦伤 - 晶圆片表面的痕迹。
' n" c; o) t4 \+ ?- w1 |Secondary Flat - A flat that is smaller than the primary orientation flat. The position of this flat determines what type the wafer is, and also the orientation of the wafer.
8 \" W& [: v/ ]+ B第二定位边 - 比主定位边小的定位边，它的位置决定了晶圆片的类型和晶向。
  X: p. P* p4 aShape -
形状 -
' L, R& T; @) w; M$ H) K6 w% ISite - An area on the front surface of the wafer that has sides parallel and perpendicular to the primary orientation flat. (This area is rectangular in shape)
局部表面 - 晶圆片前面上平行或垂直于主定位边方向的区域。
Site Array - a neighboring set of sites
局部表面系列 - 一系列的相关局部表面。
, L( i/ {0 J  x* {) |Site Flatness -
局部平整 -
  A# x1 d" Z$ M, B% j( @/ tSlip - A defect pattern of small ridges found on the surface of the wafer.
划伤 - 晶圆片表面上的小皱造成的缺陷。
: M- _6 r  `% E2 l; |/ x; |Smudge - A defect or contamination found on the wafer caused by fingerprints.
) S3 Y4 i% n5 c( a! J$ h! z$ U污迹 - 晶圆片上指纹造成的缺陷或污染。
Sori -
Striation - Defects or contaminations found in the shape of a helix.
条痕 - 螺纹上的缺陷或污染。
, q* o$ W% K4 J6 z  VSubsite, of a Site - An area found within the site, also rectangular. The center of the subsite must be located within the original site.
局部子表面 - 局部表面内的区域，也是矩形的。子站中心必须位于原始站点内部。
Surface Texture - Variations found on the real surface of the wafer that deviate from the reference surface.
$ e2 d" I% }" J. `& G0 a, V表面纹理 - 晶圆片实际面与参考面的差异情况。
Test Wafer - A silicon wafer that is used in manufacturing for monitoring and testing purposes.
, r6 Y6 ]2 r$ G& Z' [测试晶圆片 - 用于生产中监测和测试的晶圆片。
Thickness of Top Silicon Film - The distance found between the face of the top silicon film and the surface of the oxide layer.
. v: A; N* s& l4 F0 i顶部硅膜厚度 - 顶部硅层表面和氧化层表面间的距离。
% t4 W3 P; w2 V  W9 aTop Silicon Film - The layer of silicon on which semiconductor devices are placed. This is located on top of the insulating layer.
顶部硅膜 - 生产半导体电路的硅层，位于绝缘层顶部。
Total Indicator Reading (TIR) - The smallest distance between planes on the surface of the wafer.
总计指示剂数(TIR) - 晶圆片表面位面间的最短距离。
Virgin Test Wafer - A wafer that has not been used in manufacturing or other processes.
原始测试晶圆片 - 还没有用于生产或其他流程中的晶圆片。
Void - The lack of any sort of bond (particularly a chemical bond) at the site of bonding.
' \1 `$ s7 Q, L4 B# X+ B无效 - 在应该绑定的地方没有绑定（特别是化学绑定）。
Waves - Curves and contours found on the surface of the wafer that can be seen by the naked eye.
波浪 - 晶圆片表面通过肉眼能发现的弯曲和曲线。
9 v6 g, W* L3 ]& x0 iWaviness - Widely spaced imperfections on the surface of a wafer.
0 e* u; B3 y+ @8 y/ u$ }( w8 v波纹 - 晶圆片表面经常出现的缺陷。